Apparatus for treating a substrate
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; and a fluid supply unit configured to supply a fluid in a supercritical state to the treating space, wherein the fluid supply unit comprises: a supply line provided at a top wall of the chamber; and a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and wherein the discharge unit comprises: a body having a discharge fluid channel for the fluid; a nozzle plate provided at a discharge end of the body; and a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.
1 . A substrate treating apparatus comprising:
a chamber having a treating space therein;
a substrate support unit configured to support a substrate in the treating space; and
a fluid supply unit configured to supply a fluid in a supercritical state to the treating space,
wherein the fluid supply unit comprises:
a supply line provided at a top wall of the chamber; and
a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and
wherein the discharge unit comprises:
a body having a discharge fluid channel for the fluid;
a nozzle plate provided at a discharge end of the body; and
a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.
2 . The substrate treating apparatus of claim 1 , wherein the nozzle plate has a plurality of first holes in a first region thereof, and a plurality of second holes in a second region thereof, the first region including peripheral region of the nozzle plate and the second region including a central region of the nozzle plate,
wherein a cross-section area of the first hole is larger than a cross-sectional area of the second hole.
3 . The substrate treating apparatus of claim 2 , wherein the blocking plate is disposed such that the plurality of the second holes are located under the blocking plate.
4 . The substrate treating apparatus of claim 2 , wherein a diameter of the blocking plate is substantially equal to a diameter of the second region of the nozzle plate.
5 . The substrate treating apparatus of claim 4 , wherein the blocking plate is substantially aligned with the second region of the nozzle plate.
6 . The substrate treating apparatus of claim 2 , wherein a number of the plurality of the first holes is smaller than a number of the plurality of the second holes.
7 . The substrate treating apparatus of claim 1 , wherein the discharge fluid channel is formed through the body from a top surface to a bottom surface thereof, and
a diameter of the discharge fluid channel is constant.
8 . The substrate treating apparatus of claim 1 , wherein the discharge fluid channel is formed through the body from a top surface to a bottom surface thereof, and
a diameter of the discharge fluid channel gradually increases from the top surface of the body to the bottom surface of the body.
9 . The substrate treating apparatus of claim 1 , wherein the fluid includes a supercritical fluid.
10 . A substrate treating apparatus comprising:
a chamber having a treating space therein;
a substrate support unit configured to support a substrate in the treating space; and
a fluid supply unit configured to supply a fluid in a supercritical state to the treating space,
wherein the fluid supply unit comprises:
a supply line provided at a top wall of the chamber; and
a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and
wherein the discharge unit comprises:
a body having a discharge fluid channel for the fluid; and
a nozzle plate provided at a discharge end of the body; and
wherein the nozzle plate comprises:
a first region having a plurality of first holes, the first region including a peripheral region of the nozzle plate; and
a second region having a plurality of second holes, the second region including a central region of the nozzle plate, and
wherein a diameter of each of the plurality of first holes is larger than a diameter of each of the plurality of second holes.
11 . A substrate treating apparatus of claim 10 , wherein
the discharge unit comprises a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.
12 . The substrate treating apparatus of claim 11 , wherein the blocking plate has a size substantially corresponding to a size of the second region of the nozzle plate.
13 . The substrate treating apparatus of claim 11 , wherein the blocking plate is substantially aligned with the second region of the nozzle plate.
14 . The substrate treating apparatus of claim 10 , wherein the number of the plurality of first holes is smaller than the number of the plurality of second holes.
15 . The substrate treating apparatus of claim 10 , wherein the plurality of first holes are spaced apart from each other along a circumferential direction of the nozzle plate such that the plurality of first holes surround the plurality of second holes.
16 . The substrate treating apparatus of claim 10 , wherein
the discharge fluid channel is formed through the body from a top and surface to a bottom surface, and
a diameter of the discharge fluid channel is constant from the top surface to the bottom surface.
17 . The substrate treating apparatus of claim 10 ,
the discharge fluid channel is formed through the body from a top surface to a bottom surface, and
a inner diameter of the discharge fluid channel gradually increases from the top surface to the bottom surface.
18 . The substrate treating apparatus of claim 17 , wherein the nozzle plate has a size corresponding to a size of a discharge port of the discharge fluid channel formed at the bottom surface of the body.
19 . The substrate treating apparatus of claim 10 , wherein the fluid includes a supercritical fluid.
20 . A substrate treating apparatus comprising:
a chamber having a treating space therein;
a substrate support unit configured to support a substrate in the treating space; and
a fluid supply unit configured to supply a fluid in a supercritical state to the treating space,
wherein the fluid supply unit comprises:
a supply line provided at a top wall of the chamber; and
a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to the substrate, and
wherein the discharge unit comprises:
a discharge fluid channel for the fluid;
a nozzle plate provided at an end of the discharge fluid channel; and
a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate, and
wherein the nozzle plate comprises:
a first region having a plurality of first holes with a first diameter formed therein, the first region including a peripheral region of the nozzle plate; and
a second region having a plurality of second holes with a second diameter smaller than the first diameter, the second region including a central region of the nozzle plate, and
wherein the blocking plate has a size corresponding to a size of the second region of the nozzle plate, and
the blocking plate is substantially aligned with the second region of the nozzle plate.