Multiple current quantization values for peak power management
A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.
1 . A memory device comprising:
a plurality of memory dies, each memory die of the plurality of memory dies comprising;
a memory array; and
control logic, operatively coupled with the memory array, to perform operations comprising:
receiving a request to perform a memory access operation, wherein the memory access operation comprises a set of sub-operations;
selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the sub-operation based on a set of peak power management (PPM) operation parameters; and
causing the memory access operation to be performed using PPM based on the current quantization data structure.
2 . The memory device of claim 1 , wherein the operations further comprise:
determining whether to use PPM to perform the memory access operation; and
in response to determining that PPM is to be used to perform the memory access operation, selecting the current quantization data structure.
3 . The memory device of claim 1 , wherein the plurality of current quantization data structures comprises a PPM operating mode current quantization data structure defined for a respective PPM operating mode indicative of whether a pump supply voltage rail is enabled.
4 . The memory device of claim 1 , wherein the plurality of current quantization data structures comprises a time averaging window current quantization data structure defined for a respective time averaging window.
5 . The memory device of claim 1 , wherein selecting the current quantization data structure comprises receiving a command selecting the current quantization data structure.
6 . The memory device of claim 1 , wherein each current quantization data structure of the plurality of current quantization data structures further maintains, for each sub-operation of the set of sub-operations, a respective breakpoint characteristic indicative of a type of breakpoint transition.
7 . The memory device of claim 6 , wherein each breakpoint characteristic is indicative of one of: a low current (LC) breakpoint to high current (HC) breakpoint transition, an HC breakpoint to LC breakpoint transition, or no breakpoint transition.
8 . A method comprising:
receiving, by a processing device, a request to perform a memory access operation, wherein the memory access operation comprises a set of sub-operations;
selecting, by the processing device, a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the sub-operation based on a set of peak power management (PPM) operation parameters; and
causing, by the processing device, the memory access operation to be performed using PPM based on the current quantization data structure.
9 . The method of claim 8 , further comprising:
determining, by the processing device, whether to use PPM to perform the memory access operation in view of the set of PPM parameters; and
in response to determining that PPM is to be used to perform the memory access operation, selecting, by the processing device, the current quantization data structure.
10 . The method of claim 8 , wherein the plurality of current quantization data structures comprises a PPM operating mode current quantization data structure defined for a respective PPM operating mode indicative of whether a pump supply voltage rail is enabled.
11 . The method of claim 8 , wherein the plurality of current quantization data structures comprises a time averaging window current quantization data structure defined for a respective time averaging window.
12 . The method of claim 8 , wherein selecting the current quantization data structure comprises receiving a command selecting the current quantization data structure.
13 . The method of claim 8 , wherein each current quantization data structure of the plurality of current quantization data structures further maintains, for each sub-operation of the set of sub-operations, a respective breakpoint characteristic indicative of a type of breakpoint transition.
14 . The method of claim 13 , wherein each breakpoint characteristic is indicative of one of: a low current (LC) breakpoint to high current (HC) breakpoint transition, an HC breakpoint to LC breakpoint transition, or no breakpoint transition.
15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
receiving a request to perform a memory access operation comprising a set of sub-operations;
determining whether to use peak power management (PPM) to perform the memory access operation;
in response to determining that PPM is to be used to perform the memory access operation, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the sub-operation based on a set of PPM operation parameters; and
causing the memory access operation to be performed using PPM based on the current quantization data structure.
16 . The non-transitory computer-readable storage medium of claim 15 , wherein the plurality of current quantization data structures comprises a PPM operating mode current quantization data structure defined for a respective PPM operating mode indicative of whether a pump supply voltage rail is enabled.
17 . The non-transitory computer-readable storage medium of claim 15 , wherein the plurality of current quantization data structures comprises a time averaging window current quantization data structure defined for a respective time averaging window.
18 . The non-transitory computer-readable storage medium of claim 15 , wherein selecting the current quantization data structure comprises receiving a command selecting the current quantization data structure.
19 . The non-transitory computer-readable storage medium of claim 15 , wherein each current quantization data structure of the plurality of current quantization data structures further maintains, for each sub-operation of the set of sub-operations, a respective breakpoint characteristic indicative of a type of breakpoint transition.
20 . The non-transitory computer-readable storage medium of claim 19 , wherein each breakpoint characteristic is indicative of one of: a low current (LC) breakpoint to high current (HC) breakpoint transition, an HC breakpoint to LC breakpoint transition, or no breakpoint transition.