Placing table and substrate processing apparatus
There is a placing table comprising: an electrostatic chuck having a chuck electrode, wherein the electrostatic chuck is configured to attract and hold a substrate on a placing surface and to be rotatable; a freezing device having a contact surface in contact with or separated from a surface of the electrostatic chuck opposite to the placing surface and configured to cool the electrostatic chuck; and a power controller configured to superimpose a radio frequency (RF) bias voltage applied to the electrostatic chuck on a chuck voltage applied to the chuck electrode.
1 . A film forming method for forming a wiring by a sputtering method using physical vapor deposition, the method comprising:
bringing a contact surface of a freezing device into contact with a rear surface of an electrostatic chuck included in a placing table to cool the electrostatic chuck to a temperature of 150K or lower;
mounting a substrate on a placing surface of the electrostatic chuck and applying a chuck voltage to a chuck electrode embedded in the electrostatic chuck so that the substrate is electrostatically attracted to and held on the placing surface;
separating the freezing device from the electrostatic chuck by controlling a lifting mechanism; and
performing a film forming step including rotating the electrostatic chuck holding the substrate, supplying an excitation gas into a processing chamber, superimposing an RF bias voltage on the chuck voltage and applying the superimposed voltage to the electrostatic chuck.
2 . The film forming method of claim 1 ,
wherein the chuck voltage is applied to the chuck electrode from a DC power supply, and the RF bias voltage is supplied from a radio frequency power supply through a splitter and superimposed on the chuck voltage.
3 . The film forming method of claim 1 ,
wherein the electrostatic chuck comprises a base formed of an insulating material and a chuck portion disposed on the base, the chuck electrode being embedded in the chuck portion.
4 . The film forming method of claim 1 ,
further comprising loading the substrate into the processing chamber through a gate valve before the mounting step, and unloading the substrate from the processing chamber after the film forming step.
5 . The film forming method of claim 1 ,
wherein a heat transfer gas is supplied to a gap between the substrate and the electrostatic chuck to enhance cooling efficiency during the cooling of the electrostatic chuck.
6 . The film forming method of claim 1 ,
wherein the freezing device is at least partially made of a metal and is electrically connected to ground potential.
7 . The film forming method of claim 1 ,
wherein the excitation gas supplied into the processing chamber is argon gas.
8 . The film forming method of claim 1 ,
wherein the film forming step includes oscillating a magnet to generate a magnetic field that induces plasma and controlling a sputter discharge area of the target.
9 . The film forming method of claim 1 ,
further comprising, before the cooling of the electrostatic chuck, evacuating the processing chamber to a predetermined vacuum level.
10 . The film forming method of claim 1 ,
wherein the electrostatic chuck comprises a base formed of an insulating material such that RF bias current is inhibited from flowing toward the freezing device.
11 . The film forming method of claim 1 ,
wherein, after separating the freezing device from the electrostatic chuck, a distance between the contact surface of the freezing device and the rear surface of the electrostatic chuck is set to be equal to or less than a sheath length.