Conductive interconnects and methods of forming conductive interconnects
Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
1. A conductive interconnect, comprising:
a conductive liner lining a first opening in an insulative mass, the conductive liner establishing a second opening inside the first opening, wherein the conductive liner comprises a thickness below an upper portion of the first opening and as the conductive liner extends upward toward the upper portion of the first opening, the thickness of the conductive liner continually decreases to a smallest thickness at the upper portion of the first opening;
a conductive plug partially filling the second opening leaving a cavity above an upper surface of the conductive plug, portions of the conductive liner comprising a varied thickness extending elevationally above the upper surface of the conductive plug;
an insulative collar within the cavity against the portions of the conductive liner and against a first portion of the upper surface of the conductive plug leaving a second portion of the upper surface of the conductive plug not against the insulative collar; and
a plurality of vertically-extending interconnects over the insulative mass with at least one vertically-extending interconnect contacting the second portion of the upper surface portion of the conductive plug.
2. The conductive interconnect of claim 1 wherein the conductive liner comprises a thickness below the upper surface of the conductive plug that is greater than a thickness above the upper surface of the conductive plug.
3. The conductive interconnect of claim 1 wherein the upper surface of the conductive plug comprises a horizontal dimension along a cross-section within a range of from about 8 nm to about 40 nm.
4. The conductive interconnect of claim 1 wherein a lowermost portion of the at least one vertically-extending interconnect contacting the second portion of the upper surface of the conductive plug comprises a horizontal dimension along the cross-section within a range of from about 5 nm to about 20 nm.
5. The conductive interconnect of claim 1 wherein the insulative collar comprises silicon dioxide.
6. The conductive interconnect of claim 1 wherein the insulative collar comprises silicon nitride.
7. The conductive interconnect of claim 1 wherein the conductive plug comprises metal.
8. The conductive interconnect of claim 1 wherein the conductive plug comprises tungsten.
9. An integrated assembly, comprising:
an opening extending through an insulative mass to an upper surface of a first conductive structure;
a liner material within the opening to line sidewalls of the opening, the liner material comprising a varying thickness with the smallest thickness being coplanar with an uppermost surface of the insulative mass;
a core material within the opening and along the lined sidewalls of the opening;
a cavity over the core material;
an insulative spacer against an upper surface of the core material within the cavity and comprising an outer periphery in the cavity that extends from the upper surface of the core material to curve laterally to be coplanar with the uppermost surface of the insulative mass;
a conductive structure over the insulative mass, a portion of the conductive structure extending into the cavity and being configured as a vertically-extending interconnect, wherein the vertically extending interconnect is electrically coupled to the first conductive structure through the core material.
10. The integrated assembly of claim 9 wherein the conductive core material consists essentially of one or more metals, and wherein the liner material comprises metal nitride.
11. The integrated assembly of claim 9 wherein the conductive core material consists essentially of tungsten, and wherein the liner material comprises one or both of titanium nitride and tungsten nitride.
12. The integrated assembly of claim 9 wherein the insulative spacer comprises one or both of silicon dioxide and silicon nitride.
13. The integrated assembly of claim 9 wherein a region of the liner material is not covered by the insulative spacer.
14. The integrated assembly of claim 9 wherein the first conductive structure is electrically coupled with logic circuitry.
15. The integrated assembly of claim 14 wherein the logic circuitry comprises one or both of sense-amplifier-circuitry and wordline-driver-circuitry.
16. The integrated assembly of claim 1 wherein the insulative collar comprises an outer periphery in the cavity that extends from the upper surface of the conductive plug to curve laterally to be coplanar with an upper surface of the insulative mass.
17. The integrated assembly of claim 1 wherein the insulative mass is against an electrically conductive structure.
18. The integrated assembly of claim 17 wherein the electrically conductive structure is over and spaced from a semiconductor substrate.
19. The integrated assembly of claim 9 wherein the liner material comprises a thickness below an upper portion of the opening and as the conductive liner extends upward toward the upper portion of the opening, the thickness of the liner material continually decreases to a smallest thickness at the upper portion of the opening.
20. The integrated assembly of claim 9 wherein the insulative mass is against the first conductive structure.
21. The integrated assembly of claim 20 wherein the first conductive structure is over and spaced from a semiconductor substrate.