Granted Patent B2

US 12,463,152 · App. 17/832,940 · Granted Nov 4, 2025

Inventors: Chun Yu Chen (Hsinchu, TW); Yen Lian Lai (New Taipei, TW)

Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD

H01L23/585H01L23/481H01L23/562H01L25/0657H10D30/62

Abstract

Claims (64)

1 . A semiconductor structure, comprising:

a substrate having a circuit region and a seal ring region around the circuit region;

first active regions of a first width W 1 formed in the circuit region;

second active regions of a second width W 2 formed in the seal ring region, wherein the second width is greater than the first width, and wherein each of the second active regions is a continuous ring shape to enclose the circuit region;

isolation features formed in the circuit region and the seal ring region, wherein each of the first and second active regions is surrounded by and separated from other active region by the isolation features, and wherein each of the first and second active regions includes a semiconductor material and is protruded above the isolation features from the substrate;

first gate stacks disposed on the first active regions in the circuit region and extending to isolation features; and

second gate stacks disposed on the second active regions in the seal ring region and completely landing on the second active regions, wherein each of the second gate stacks is a continuous ring shape to enclose the circuit region.

2 . The semiconductor structure of claim 1 , wherein a ratio W 2 /W 1 ranges between 5 and 15.

3 . The semiconductor structure of claim 1 , wherein the first active regions are configured in parallel and longitudinally oriented along a first direction.

4 . The semiconductor structure of claim 3 , wherein

the second active regions include first segments in a first area and second segments in a second area;

the first segments are longitudinally oriented along the first direction; and

the second segments are longitudinally oriented along a second direction that is orthogonal to the first direction.

5 . The semiconductor structure of claim 4 , wherein the second active regions further include third segments in a corner region, the third segment being longitudinally oriented along a third direction different from the first and second directions.

6 . The semiconductor structure of claim 5 , wherein the third segments of the second active regions connect the first and second segments in the corner region.

7 . The semiconductor structure of claim 6 , wherein

the first gate stacks are longitudinally oriented to be orthogonal with the first active regions; and

the second gate stacks are longitudinally oriented to be in parallel with the second active regions.

8 . The semiconductor structure of claim 7 , wherein the second gate stacks are landing on the second active region with margins such that a first and second longitudinal edges of each of the second gate stacks are within a first and second longitudinal edges of a corresponding one of the second active regions.

9 . The semiconductor structure of claim 8 , wherein the second gate stacks include

first gate segments longitudinally oriented along the first direction and landing on the first segments of the second active regions; and

second gate segments longitudinally oriented along the second direction and landing on the second segments of the second active regions.

10 . The semiconductor structure of claim 9 , wherein the second gate stacks further include third gate segments in the corner region and landing on the third segments of the second active regions, and wherein the third gate segments are longitudinally oriented along the third direction.

11 . The semiconductor structure of claim 10 , wherein the third gate segments connect the first gate segments and the second gate segments in the corner region.

12 . The semiconductor structure of claim 11 , wherein the first gate stacks and second gate stacks are different in composition.

13 . The semiconductor structure of claim 12 , wherein the first gate stacks include a metal material, and the second gate stacks include polysilicon.

14 . The semiconductor structure of claim 12 , wherein

each of the first active regions includes multiple channels vertically stacked on the substrate;

each of the first gate stacks extends to wrap around a corresponding one of the multiple channels; and

a bottom surface of the second gate stacks is above a top surface of the second active regions.

15 . A semiconductor structure, comprising:

a substrate having a circuit region and a seal ring region around the circuit region;

first active regions disposed in the circuit region;

second active regions disposed in the seal ring region, wherein each of the second active regions is a continuous ring shape to enclose the circuit region;

isolation features formed in the circuit region and the seal ring region, wherein each of the first and second active regions is surrounded by and separated from other active region by the isolation features, and wherein each of the first and second active regions includes a semiconductor material and is protruded above the isolation features from the substrate;

first gate stacks disposed within the circuit region and configured on the first active regions; and

second gate stacks disposed within the seal ring region and configured on the second active regions, wherein

the first gate stacks are longitudinally oriented to be orthogonal with the first active regions, and

the second gate stacks are longitudinally oriented to be in parallel with the second active regions.

16 . The semiconductor structure of claim 15 , wherein

the first active regions include a first width W 1 ; and

the second active regions include a second width W 2 being greater than the first width W 1 , a ratio W 2 /W 1 ranging between 5 and 15.

17 . The semiconductor structure of claim 15 , wherein

the second active regions include first segments in a first area, second segments in a second area, and third segments in a corner region;

the first segments are longitudinally oriented along a first direction;

the second segments are longitudinally oriented along a second direction that is orthogonal to the first direction; and

the third segments are longitudinally oriented along a third direction different from the first and second directions, the third segments connect the first and second segments.

18 . The semiconductor structure of claim 15 , wherein

the first gate stacks and second gate stacks are different in composition;

each of the first active regions includes multiple channels vertically stacked on the substrate;

a bottom surface of the first gate stacks is below a bottom surface of a bottommost one of the multiple channels; and

a bottom surface of the second gate stacks is above a top surface of the second active regions.

19 . A semiconductor structure, comprising:

a substrate having a circuit region and a seal ring region around the circuit region;

first active regions of a first width W 1 disposed in the circuit region;

second active regions of a second width W 2 disposed in the seal ring region, wherein each of the second active regions is a continuous ring shape to enclose the circuit region;

first gate stacks disposed within the circuit region and configured on the first active regions; and

second gate stacks disposed within the seal ring region and configured on the second active regions, wherein

the first gate stacks are longitudinally oriented to be orthogonal with the first active regions,

the second gate stacks are longitudinally oriented to be in parallel with the second active regions, and

the second width W 2 is greater than the first width W 1 , wherein the first gate stacks and second gate stacks are different in composition.

20 . The semiconductor structure of claim 19 , wherein

a ratio W 2 /W 1 ranges between 5 and 15; and

each of the second gate stacks is a continuous ring shape to enclose the circuit region.

Assignments (1)

Continuity (1)

References Cited (30)