Multi wavelength light emitting device and method of fabricating the same
A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.
1 . A light emitting device, comprising:
a first short wavelength emission region;
a second short wavelength emission region;
a first long wavelength emission region;
a second long wavelength emission region;
a first electrode disposed on each of the first and second short wavelength emission regions;
a second electrode disposed on each of the first and second long wavelength emission regions;
a transparent layer disposed between the second short wavelength emission region and the second long wavelength emission region, wherein:
the first and second short wavelength emission regions each include an active layer and a second conductivity type semiconductor layer,
the first and second long wavelength emission regions each include a first conductivity type semiconductor layer and an active layer,
the transparent layer is disposed between the active layer of the first short wavelength emission region and the active layer of the first long wavelength emission region,
the active layer of the first and second long wavelength emission regions contain more Indium (In) than the active layer of the first and second short wavelength emission regions,
the active layer of the first and second short wavelength emission regions emit light of a shorter wavelength than that of light emitted from the first and second long wavelength emission regions,
the transparent layer includes a material without phosphor,
the first long wavelength emission region and the second long wavelength emission region are electrically connected in series with each other, and the first short wavelength emission region and the second short wavelength emission region are electrically connected in series with each other, and
the first long wavelength emission region and the second long wavelength emission region are electrically spaced apart from the first short wavelength emission region and the second short wavelength emission region.
2 . The light emitting device of claim 1 , further comprising: a substrate disposed on a side of the first and second short wavelength emission regions or the first and second long wavelength emission regions.
3 . The light emitting device of claim 1 , wherein the first and second short wavelength emission regions emit blue light, and the first and second long wavelength emission regions emit green light.
4 . The light emitting device of claim 1 , wherein the first and second long wavelength emission regions and the first and second short wavelength emission regions are driven independently from each other.
5 . The light emitting device of claim 1 , further comprising:
a first pad electrically connected to each of the first and second short wavelength emission regions; and
a second pad and a third pad electrically connected to each of the first and second short wavelength emission regions and each of the first and second long wavelength emission regions, respectively.
6 . The light emitting device of claim 5 , wherein:
the second pad is electrically connected to the second conductivity type semiconductor layer of each of the first and second short wavelength emission regions, and
the third pad is electrically connected to the second conductivity type semiconductor layer of each of the first and second long wavelength emission regions.
7 . The light emitting device of claim 6 , further comprising: a connector contacting the first pad, wherein the connector is extended from the first pad to outward of each of the first and second short wavelength emission regions.
8 . The light emitting device of claim 7 , wherein the connector is covered by the transparent layer, and wherein the second electrode is disposed between the active layer of the second long wavelength emission region and the transparent layer.
9 . The light emitting device of claim 7 , further comprising a planarization layer disposed on each of the first and second short wavelength emission regions, wherein the planarization layer is disposed between the second conductivity type semiconductor layer of each of the first and second short wavelength emission regions and the connector.
10 . The light emitting device of claim 1 , wherein: the light emitted from the first and second long wavelength emission regions and the light emitted from the first and second short wavelength emission regions are combined to implement light having a color different from colors of the light emitted from the first and second short and first and second long wavelength emission regions.
11 . A light emitting module, comprising:
a circuit board having pads; and
a light emitting device bonded to the pads on the circuit board, the light emitting device comprising:
a first short wavelength emission region;
a second short wavelength emission region;
a first long wavelength emission region;
a second long wavelength emission region;
a first electrode disposed on each of the first and second short wavelength emission regions;
a second electrode disposed on each of the first and second long wavelength emission regions; and
a transparent layer disposed between the second short wavelength emission region and the second long wavelength emission region, wherein:
the first and second short wavelength emission regions each include an active layer and a second conductivity type semiconductor layer,
the first and second long wavelength emission regions each include a first conductivity type semiconductor layer and an active layer,
the transparent layer is disposed between the active layer of each of the first and second short wavelength emission regions and the active layer of each of the first and second long wavelength emission regions,
the active layer of the first and second long wavelength emission regions contain more Indium (In) than the active layer of the first and second short wavelength emission regions,
the active layer of the first and second short wavelength emission regions each emit light of a shorter wavelength than that of light emitted from the first and second long wavelength emission regions, and
the transparent layer includes a material without phosphor,
the first long wavelength emission region and the second long wavelength emission region are electrically connected in series with each other, and the first short wavelength emission region and the second short wavelength emission region are electrically connected in series with each other, and
the first long wavelength emission region and the second long wavelength emission region are electrically spaced apart from the first short wavelength emission region and the second short wavelength emission region.
12 . The light emitting device of claim 11 , further comprising: a substrate disposed on a side of the first and second short wavelength emission regions or the first and second long wavelength emission regions.
13 . The light emitting device of claim 11 , wherein the first and second short wavelength emission regions emit blue light, and the first and second long wavelength emission regions emit green light.
14 . The light emitting device of claim 11 , wherein the first and second long wavelength emission regions and the first and second short wavelength emission regions are driven independently from each other.
15 . The light emitting device of claim 11 , further comprising:
a first pad electrically connected to each of the first and second short wavelength emission regions; and
a second pad and a third pad electrically connected to each of the first and second short wavelength emission regions and each of the first and second long wavelength emission regions, respectively.
16 . The light emitting device of claim 15 , wherein:
the second pad is electrically connected to the second conductivity type semiconductor layer of each of the first and second short wavelength emission regions, and
the third pad is electrically connected to the second conductivity type semiconductor layer of each of the first and second long wavelength emission regions.
17 . The light emitting device of claim 16 , further comprising: a connector contacting the first pad, wherein the connector is extended from the first pad to outward of each of the first and second short wavelength emission regions.
18 . The light emitting device of claim 17 , wherein the connector is covered by the transparent layer, and wherein the second electrode is disposed between the active layer of the second long wavelength emission region and the transparent layer.
19 . The light emitting device of claim 17 , further comprising: a planarization layer disposed on each of the first and second short wavelength emission regions, wherein the planarization layer is disposed between the second conductivity type semiconductor layer of each of the first and second short wavelength emission regions and the connector.
20 . The light emitting device of claim 11 , wherein: the light emitted from the first and second long wavelength emission regions and the light emitted from the first and second short wavelength emission regions are combined to implement light having a color different from colors of the light emitted from the first and second short and first and second long wavelength emission regions.