Semiconductor device having a lateral conductive line included low and high work function electrodes

1 . A semiconductor device comprising:

a lateral layer spaced apart from a lower structure and extending in a direction parallel to the lower structure;

a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the lateral layer;

a data storage element coupled to a second-side end of the latera layer; and

a lateral conductive line extending in a direction crossing the lateral layer,

wherein the lateral conductive line includes:

a first work function electrode;

a second work function electrode disposed adjacent to the vertical conductive line and having a lower work function than the first work function electrode; and

a third work function electrode disposed adjacent to the data storage dement and having a lower work function than the first work function electrode.

2 . The semiconductor device of claim 1 , wherein the second and third work function electrodes have a work function which is lower than a mid-gap work function of silicon, and the first work function electrode has a work function which is higher than the mid-gap work function of silicon.

3 . The semiconductor device of claim 1 , wherein the second and third work function electrodes include doped polysilicon which is doped with an N-type dopant.

4 . The semiconductor device of claim 1 , wherein the first work function electrode includes a metal-based material.

5 . The semiconductor device of claim 1 , wherein the first work function electrode includes a metal, a metal nitride, or a combination thereof.

6 . The semiconductor device of claim 1 , wherein the first work function electrode has a larger volume than the second and third work function electrodes.

7 . The semiconductor device of claim 1 , wherein each of the first, second and third work function electrodes vertically overlaps with the lateral layer.

8 . The semiconductor device of claim 1 , wherein the first work function electrode and the second work function electrode have the same work function.

9 . The semiconductor device of claim 1 , wherein the lateral layer has a thickness which is smaller than thicknesses of the first, second, and third work function electrodes.

10 . The semiconductor device of claim 1 , wherein the lateral layer includes a semiconductor material or an oxide semiconductor material.

11 . The semiconductor device of claim 1 , wherein the lateral layer includes monocrystalline silicon, polysilicon, germanium, silicon-germanium or IGZO (Indium Gallium Zinc Oxide).

12 . The semiconductor device of claim 1 , wherein the lateral layer includes:

a first doped region coupled to the vertical conductive line;

a second doped region coupled to the data storage element; and

a channel between the first doped region and the second doped region.

13 . The semiconductor device of claim 1 , wherein the lateral conductive line includes:

a lateral conductive line of a double structure facing each other with the lateral layer interposed therebetween.

14 . The semiconductor device of claim 1 , wherein the data storage element includes a capacitor, the capacitor including a cylindrical first electrode, a second electrode and a dielectric layer, wherein the dielectric layer is disposed between the first electrode and the second electrode.

15 . The semiconductor device of claim 1 , further comprising:

a first contact node between the vertical conductive line and the first-side end of the lateral layer; and

a second contact node between the data storage element and the second-side end of the lateral layer.