Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via
An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure. The MRAM device further includes a first etch stop layer on the spacers. A bottommost surface of the first etch stop layer covers a topmost surface of the spacers. In addition, the MRAM device includes a top electrode via on the top electrode and the first etch stop layer.
1 . A magnetic random access memory (MRAM) device, comprising:
a bottom electrode over a substrate;
a first etch stop layer surrounding the bottom electrode;
a magnetic tunnel junction (MTJ) structure on the bottom electrode;
a top electrode on the MTJ structure;
spacers on sidewalls of the top electrode and the MTJ structure, wherein the spacers have a first portion in direct contact with the first etch stop layer and a second portion in direct contact with the bottom electrode;
a second etch stop layer on the spacers, wherein a bottommost surface of the second etch stop layer covers a topmost surface of the spacers, and the bottommost surface of the second etch stop layer is higher than a bottom surface of the spacers; and
a top electrode via on the top electrode and the second etch stop layer.
2 . The MRAM device as claimed in claim 1 , wherein a bottom surface of the spacers covers the bottom electrode.
3 . The MRAM device as claimed in claim 1 , wherein an interface between the second etch stop layer and the spacers is level with an interface between the top electrode via and the top electrode.
4 . The MRAM device as claimed in claim 1 , further comprising:
a bottom electrode via under the bottom electrode.
5 . The MRAM device as claimed in claim 4 , further comprising:
an interlayer dielectric (ILD) layer surrounding the bottom electrode via.
6 . A magnetic random access memory (MRAM) device, comprising:
a bottom electrode over a semiconductor substrate;
a magnetic tunnel junction (MTJ) structure on the bottom electrode;
a top electrode on the MTJ structure;
a first spacer on sidewalls of the top electrode and the MTJ structure;
a second spacer on sidewalls of the first spacer;
a dielectric layer surrounding and in direct contact with the first spacer and the second spacer;
an etch stop layer on the first spacer, the second spacer and the dielectric layer, wherein the etch stop layer is in direct contact with the first spacer, the second spacer and the dielectric layer; and
a top electrode via covering the top electrode and a top surface and a sidewall of the etch stop layer.
7 . The MRAM device as claimed in claim 6 , wherein a bottom surface of the first spacer is lower than a bottom surface of the second spacer.
8 . The MRAM device as claimed in claim 6 , wherein the second spacer is separated from the top electrode by the first spacer.
9 . The MRAM device as claimed in claim 6 , wherein the first spacer is in direct contact with a top surface of the bottom electrode, and a portion of the sidewalls of the first spacer protrudes from a sidewall of the bottom electrode.
10 . The MRAM device as claimed in claim 6 , wherein the etch stop layer is made of a high electrical resistance material or a high dielectric constant material.
11 . The MRAM device as claimed in claim 6 , wherein the first spacer is L-shaped.
12 . A magnetic random access memory (MRAM) device, comprising:
a bottom electrode;
a first etch stop layer surrounding the bottom electrode;
a magnetic tunnel junction (MTJ) structure on the bottom electrode;
a top electrode on the MTJ structure;
spacers on the bottom electrode and the first etch stop layer and surrounding the top electrode and the MTJ structure, wherein an interface between the spacers and the first etch stop layer is level with an interface be the MTJ structure and the bottom electrode;
a second etch stop layer on the spacers, wherein a thickness of the second etch stop layer is less than a thickness of the first etch stop layer; and
a top electrode via on the top electrode and the second etch stop layer.
13 . The MRAM device as claimed in claim 1 , wherein the bottommost surface of the first etch stop layer is higher than a bottom surface of the MTJ structure.
14 . The MRAM device as claimed in claim 1 , wherein a sidewall of the spacers protrudes from a sidewall of the bottom electrode.
15 . The MRAM device as claimed in claim 1 , wherein there is an interface between the spacers and the first etch stop layer.
16 . The MRAM device as claimed in claim 1 , wherein an interface between the spacers and the first etch stop layer is level with an interface between the MTJ structure and the bottom electrode.
17 . The MRAM device as claimed in claim 1 , wherein a bottom surface of the MTJ structure is level with a top surface of the first etch stop layer.
18 . The MRAM device as claimed in claim 12 , wherein the spacers comprise a first spacer and a second spacer on the first spacer, and wherein a bottom surface of the second spacer is higher than a top surface of the bottom electrode.
19 . The MRAM device as claimed in claim 18 , wherein the bottom surface of the second spacer is higher than a top surface of the first etch stop layer.
20 . The MRAM device as claimed in claim 18 , wherein the first etch stop layer is in direct contact with the first spacer and separated from the second spacer.