Method and apparatus to determine a patterning process parameter
A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
1 . A method comprising:
obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than a respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and
by a hardware computer system, determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe including parameters of a non-linear representation for determining the patterning process parameter.
2 . The method of claim 1 , wherein the plurality of structures form one or more design of experiment (DoE) target areas, each DoE target area corresponding to one or more particular types of the same patterning process parameter.
3 . The method of claim 2 , wherein the plurality of structures form a plurality of DoE target areas, each DoE target area corresponding to a different set of one or more types of the same patterning process parameter.
4 . The method of claim 1 , wherein at least one structure of the plurality of structures has a continuous variation in the intentional different physical configuration of the respective structure.
5 . The method of claim 1 , wherein the structures are confined to an area of less than or equal to about 2500 μm 2 .
6 . The method of claim 1 , further comprising setting up or correcting the measurement recipe based on the value.
7 . The method of claim 1 , wherein the patterning process parameter comprises overlay.
8 . The method of claim 7 , wherein the plurality of structures have different configurations corresponding to at least three types of overlay.
9 . A computer program product comprising a non-transitory computer-readable medium having instructions recorded thereon, the instructions when executed by a computer system configured to cause the computer system to implement at least the method of claim 1 .
10 . A method comprising:
obtaining a detected representation of radiation redirected from each of a plurality of design of experiment (DoE) target areas of a metrology target from a substrate, wherein each DoE target area has a structure that has an intentional different physical configuration of the respective structure than a respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein each DoE target area is associated with a different set of one or more types of a same certain patterning process parameter, each set of one or more patterning process parameter types measuring a respective change in the physical configuration of the associated DoE target area; and
by a hardware computer system, determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe including parameters of a non-linear representation for determining the patterning process parameter.
11 . The method of claim 10 , wherein each DoE target area comprises a plurality of sub-targets, each sub-target having a different offset to create an intentional different physical configuration of a structure of the sub-target than the respective nominal physical configuration of the structure of the sub-target.
12 . The method of claim 10 , wherein there are at least 15 DoE target areas.
13 . The method of claim 10 , wherein at least one structure of the plurality of DoE target areas has a continuous variation in the intentional different physical configuration of the respective structure.
14 . The method of claim 10 , further comprising setting up or correcting the measurement recipe based on the value.
15 . The method of claim 10 , wherein the patterning process parameter comprises overlay.
16 . The method of claim 15 , wherein the plurality of DoE target areas have different configurations corresponding to at least three types of overlay.
17 . A method comprising:
transferring a pattern from a patterning device to a substrate; and
forming, using the transferred pattern, at least part of a metrology target having a plurality of design of experiment (DoE) target areas, wherein each design of experiment (DoE) target area has a structure that has an intentional different physical configuration of the respective structure than a respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein each design of experiment (DoE) target area is associated with a different type of a certain same patterning process parameter, each patterning process parameter type measuring a respective change in the physical configuration of the associated design of experiment (DoE) target area and at least one patterning process parameter type of the patterning process parameter types having a non-linear relationship to optical characteristic values from the asymmetric optical characteristic distribution from the associated design of experiment (DoE) target area for the at least one patterning process parameter type.
18 . The method of claim 17 , further comprising determining a value, based on detected representations from the design of experiment (DoE) target areas and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
19 . The method of claim 17 , wherein the metrology target has an area of less than or equal to about 2500 μm 2 .
20 . The method of claim 17 , wherein at least one structure of the plurality of DoE target areas has a continuous variation in the intentional different physical configuration of the respective structure.