IP Library › Granted Patent US 12,469,532
Granted Patent B2
US 12,469,532 · App. 18/285,937 · Granted Nov 11, 2025

Systems for near-sensor analogue computing for ultrafast responsive tactile sensing

Inventors: Ming Wang (Singapore, SG); Jiaqi Tu (Singapore, SG); Xiaodong Chen (Singapore, SG)
Assignee: Nanyang Technological University
G11C7/16G11C7/1006G11C13/0002
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,469,532
App. No.
18/285,937
Granted
Nov 11, 2025
Kind
B2
Abstract

A tactile near-sensor analogue computing system and an artificial skin system are provided. The tactile near-sensor analogue computing system includes a tactile sensor array and a memristive computing array. The tactile sensor array is configured to capture data and includes a plurality of tactile sensing devices. The memristive computing array is configured to process the data and includes a plurality of memristive devices, each of the plurality of tactile sensing devices connected to one of the plurality of memristive devices.

Claims (17)

1 . A tactile near-sensor analogue computing system comprising:

a tactile sensor array configured to capture data, the tactile sensor array comprising a plurality of tactile sensing devices; and

a memristive computing array configured to process the data, the memristive computing array comprising a plurality of memristive devices, each of the plurality of tactile sensing devices is connected to one of the plurality of memristive devices, wherein each of the plurality of memristive devices is programmed to a specific conductance value to execute one of a plurality of computation tasks, and wherein the plurality of computation tasks comprises noise reduction and edge detection of pressure stimuli.

2 . The system in accordance with claim 1 wherein each of the plurality of memristive devices directly interfaces to one of the plurality of tactile sensing devices for receiving and processing non-converted captured data.

3 . The system in accordance with claim 2 wherein the tactile sensor array comprises a m×n array of the plurality of tactile sensing devices, and wherein the memristive computing array comprises a m×n×k array of the plurality of memristive devices, and wherein the ones of the plurality of memristive devices directly interfaced to the plurality of tactile sensing devices comprises memristive devices in a m×n array having a common value of k.

4 . The system in accordance with claim 1 wherein each of the plurality of tactile sensing devices comprises a piezoresistive sensor or a piezoelectric sensor.

5 . The system in accordance with claim 4 wherein the piezoresistive sensor comprises a pyramidal pressure sensor unit comprising pyramidal microstructured polydimethylsiloxane (PDMS) elastomers coated with silver nanowires (AgNWs).

6 . The system in accordance with claim 1 wherein each of the plurality of memristive devices comprises a resistive switching unit, a phase change memory, a magnetoresistive switching unit, or a ferroelectric switching unit.

7 . The system in accordance with claim 6 wherein the resistive switching unit comprises two thin film layers of conductive electrodes sandwiching a layer of titanium tungsten (TiW) and a layer of the hafnium oxide (HfO 2 ).

8 . An artificial skin system comprising:

a tactile sensor array configured to capture data, the tactile sensor array comprising a plurality of tactile sensing devices; and

a flexible memristive computing array configured to process the data, the memristive computing array comprising a plurality of memristive devices, each of the plurality of tactile sensing devices directly interfacing to one of the plurality of memristive devices, wherein the each of the plurality of memristive devices directly interfacing one of the plurality of tactile sensing devices receives and processes non-converted data captured therefrom, and wherein each of the plurality of memristive devices is programmed to a specific conductance value to execute one of a plurality of computation tasks, and wherein the plurality of computation tasks comprise noise reduction and edge detection of pressure stimuli.

9 . The artificial skin system in accordance with claim 8 wherein the tactile sensor array comprises a m×n array of the plurality of tactile sensing devices, and wherein the memristive computing array comprises a m×n×k array of the plurality of memristive devices, and wherein the ones of the plurality of memristive devices directly interfaced to the plurality of tactile sensing devices comprises memristive devices in a m×n array having a common value of k.

10 . The artificial skin system in accordance with claim 8 wherein each of the plurality of tactile sensing devices comprise a piezoresistive sensor or a piezoelectric sensor.

11 . The artificial skin system in accordance with claim 10 wherein the piezoresistive sensor comprises a pyramidal pressure sensor comprising pyramidal microstructured polydimethylsiloxane (PDMS) elastomers coated with silver nanowires (AgNWs).

12 . The artificial skin system in accordance with claim 8 wherein each of the plurality of memristive devices comprises a resistive switching device, a phase change memory, a magnetoresistive switching device or a ferroelectric switching device.

13 . The artificial skin system in accordance with claim 12 wherein the resistive switching unit comprises two thin film layers of conductive electrodes sandwiching a layer of titanium tungsten (TiW) and a layer of the hafnium oxide (HfO 2 ).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2023
From: WANG, MING; TU, JIAQI; CHEN, XIAODONG
To: NANYANG TECHNOLOGICAL UNIVERSITY
Reel/Frame 065185/0261 →
Priority Claims (1)
SG 10202104150U · Apr 23, 2021 · national
Continuity (1)
Related Publication 20240233789A1 · Jul 11, 2024
References Cited (9)
US 10489700B1 · Asnaashari et al. · 2019 [cited by applicant]
CN 111076770A · 2020 [cited by examiner]
CN 111537111A · 2020 [cited by examiner]
CN 111585563A · 2020 [cited by examiner]
WO 2021072817A1 · 2021 [cited by applicant]
Shuai (Year: 2020). [cited by examiner]
Liu (Year: 2020). [cited by examiner]
Li, Can et al. “Analogue signal and image processing with large memristor crossbars.” Nature Electronics 1 (2018):52-59, Dec. 4, 2017. [cited by applicant]
Chen, Z. et al., Bioinspired Artificial Sensory Nerve Based on Nafion Memristor, Feb. 21, 2019, vol. 29, No. 20, 1808783 [Retrieved on Jun. 20, 2022] <DOI: 10.1002/ADFM.201808783>. [cited by applicant]