Phase-change memory controller capable of reducing write power and phase-change memory system including same
A phase-change memory controller controls a phase-change memory device. The phase-change memory controller includes a write control circuit configured to receive first write data of “N” bits (where “N” is a natural number greater than 2) to be written to the phase-change memory device to generate second write data composed of compressed data compressed with “M” bits (where “N” is a natural number smaller than “N”) and “0” padding data in which the rest “N-M” bits are filled with “0”.
1 . A phase-change memory controller configured to control a phase-change memory device, comprising a write control circuit configured to 1) receive first write data to be written to the phase-change memory device and having a first number of bits, the first number being a natural number greater than 2, and 2) generate second write data including compressed data obtained by compressing the first write data to a second number of bits, the second number being a natural number smaller than the first number, the second write data further including padding data that has a size corresponding to a difference between the first number and the second number, and the padding data having a predetermined value, and
a read control circuit including a multiplexer, a decoder, and a decompression circuit,
wherein the multiplexer is configured to receive the first read data and parity data from the phase-change memory device through an input terminal, and to output the first read data and the parity data to a first output terminal or a second output terminal, based on a selection signal transmitted through a selection terminal,
wherein the decoder is configured to perform a decoding based on an error correction code on the first read data transmitted from the multiplexer,
wherein a decompression circuit is configured to perform decompressing on the first read data and generate second read data, and
wherein the first output terminal and the second output terminal of the multiplexer are coupled to the write control circuit and the decoder, respectively.
2 . The phase-change memory controller of claim 1 , further comprising:
a host interface configured to receive the first write data from an external device; and
a write buffer in communication with the host interface and configured to receive the first write data from the host interface and transmit the first write data to the write control circuit.
3 . The phase-change memory controller of claim 2 , wherein the host interface includes a compute express link (CXL).
4 . The phase-change memory controller of claim 1 , wherein the write control circuit includes:
a compression circuit configured to compress the first write data and generate the compressed data; and
a padding circuit configured to generate the padding data by writing remaining bits of the first write data with the predetermined value, the remaining bits corresponding to bits of the first write data except bits of the first write data that configures the compressed data.
5 . The phase-change memory controller of claim 4 , wherein the padding circuit is configured to output the second write data by adding the padding data to the compressed data.
6 . The phase-change memory controller of claim 5 , wherein the write control circuit further includes a read-modify-write (RMW) circuit configured to generate and output third write data in which some bits of read data are replaced with the bits of the compressed data, based on read data from the phase-change memory device and the compressed data.
7 . The phase-change memory controller of claim 6 , wherein the RMW circuit includes a data masking circuit outputting a masking signal indicating non-toggle bits among bits of the read data, based on the read data from the phase-change memory device and the compressed data.
8 . The phase-change memory controller of claim 6 , wherein the write control circuit further includes a multiplexer configured to receive the compressed data from the compression circuit through an input terminal, and to output the compressed data through a first output terminal or a second output terminal, based on a selection signal transmitted through a selection terminal.
9 . The phase-change memory controller of claim 8 , wherein the first output terminal and the second output terminal of the multiplexer are coupled to the padding circuit and the RMW circuit, respectively.
10 . The phase-change memory controller of claim 8 , wherein the multiplexer is configured to:
transmit the compressed data to the padding circuit through the first output terminal in response to the selection signal being at a logic level indicating a normal mode; and
transmit the compressed data to the RMW circuit through the second output terminal in response to the selection signal being at a logic level indicating an RMW mode.
11 . The phase-change memory controller of claim 6 , wherein the write control circuit further includes a demultiplexer configured to receive the second write data output from the padding circuit through a first input terminal, to receive the third write data output from the RMW circuit through a second input terminal, and to output the second write data or the third write data through an output terminal, based on a selection signal transmitted through a selection terminal.
12 . The phase-change memory controller of claim 11 , wherein the demultiplexer is configured to:
output the second write data in response to the selection signal being at a logic level indicating a normal mode; and
output the third write data in response to the selection signal being at a logic level indicating a RMW mode.
13 . The phase-change memory controller of claim 12 , further comprising: an encoder configured to perform an encoding on the second write data or third write data based on an error correction code (ECC) and generate first parity data or second parity data, the encoder further configured to output the third write data and the second parity data in response to receiving the third write data transmitted from the demultiplexer.
14 . The phase-change memory controller of claim 13 , further comprising an output circuit configured to receive the second write data and the first parity data, or the third write data and the second parity data, from the encoder, and output the second write data and the first parity data, or the third write data and the second parity data, to the phase-change memory device,
wherein the output circuit is further configured to:
change an order of the compressed data, the padding data, and parity data hat is either the first parity data or the second parity data.
15 . The phase-change memory controller of claim 1 , further comprising:
a read buffer configured to receive the second read data from the read control circuit and store the second read data; and
a host interface configured to receive the second read data from the read buffer and transmit the second read data to an external device.
16 . The phase-change memory controller of claim 1 , wherein the multiplexer is configured to:
transmit the first read data and the parity data to the decoder through the first output terminal in response to the selection signal being at a logic level indicating a normal mode; and
transmit the first read data and the parity data to the write control circuit through the second output terminal in response to the selection signal being at a logic level indicating an RMW mode.
17 . A phase-change memory system, comprising:
a phase-change memory device; and
a phase-change memory controller communicatively coupled with the phase-change memory device and configured to control the phase-change memory device,
wherein the phase-change memory controller includes;
a write control circuit configured to 1) receive first write data to be written to the phase-change memory device and having a first number of bits, the first number being a natural number greater than 2, and 2) generate second write data including compressed data obtained by compressing the first write data to a second number of bits, the second number being a natural number smaller than the first number, the second write data further including padding data that has a size corresponding to a difference between the first number and the second number, and the padding data having a predetermined value, and
a read control circuit including a multiplexer, a decoder, and a decompression circuit,
wherein the multiplexer is configured to receive the first read data and parity data from the phase-change memory device through an input terminal, and to output the first read data and the parity data to a first output terminal or a second output terminal, based on a selection signal transmitted through a selection terminal,
wherein the decoder is configured to perform a decoding based on an error correction code on the first read data transmitted from the multiplexer,
wherein a decompression circuit is configured to perform decompressing on the first read data and generate second read data, and
wherein the first output terminal and the second output terminal of the multiplexer are coupled to the write control circuit and the decoder, respectively.
18 . The phase-change memory system of claim 17 , further comprising:
a host interface configured to receive the first write data from an external device; and
a write buffer in communication with the host interface and configured to receive the first write data from the host interface and transmit the first write data to the write control circuit.
19 . The phase-change memory system of claim 17 , wherein the write control circuit includes:
a compression circuit configured to compress the first write data and generate the compressed data; and
a padding circuit configured to generate the padding data by writing remaining bits of the first write data with the predetermined value, the remaining bits corresponding to bits of the first write data except bits of the first write data that configures the compressed data.