Water vapor plasma to enhance surface hydrophilicity
Methods and apparatus for processing a substrate are provided herein. For example, methods for enhancing surface hydrophilicity on a substrate comprise a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate, b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 kW to 10 kW to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation, and c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°.
1 . A method for enhancing surface hydrophilicity on a substrate, comprising:
a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate;
b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 kW to 10 kW, supplying ozone (O 3 ) for about 0.1 seconds to about 30 minutes and at least one of argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ), or oxygen (O 2 ) to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation; and
c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°, wherein the at least one of argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ), oxygen (O 2 ) is supplied at a flow rate up to 5000 sccm and the ozone (O 3 ) is supplied at a flow rate up to 10 slpm.
2 . The method of claim 1 , wherein the RF power is supplied at a frequency of about 1 kHz to about 10 MHz.
3 . The method of claim 1 , wherein the microwave power is supplied at a frequency of about 1 GHz to about 10 GHz.
4 . The method of claim 1 , wherein a pressure within the processing volume is about 1 m Torr to about 1 Torr.
5 . The method of claim 1 , wherein the substrate is treated for about 0.1 seconds to about 10 minutes.
6 . The method of claim 1 , wherein the at least one of microwave power or RF power is supplied using a pulsed wave.
7 . The method of claim 1 , wherein the at least one of microwave power or RF power is supplied using a continuous wave.
8 . The method of claim 1 , wherein the ozone (O 3 ) has a concentration of up to about 300 g/m 3 .
9 . The method of claim 1 , further comprising supplying deionized water to a surface of the substrate at a flow rate of about 0.1 ml/min to about 500 ml/min.
10 . The method of claim 9 , further comprising supplying the deionized water at a temperature of about 0° C. to about 100° C.
11 . The method of claim 10 , further comprising spinning the substrate at a speed above 0 rpms to about 150 rpms.
12 . A non-transitory computer readable storage medium having stored thereon instructions that when executed by a processor perform a method for enhancing surface hydrophilicity on a substrate, comprising:
a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate;
b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 KW to 10 KW, supplying ozone (O 3 ) for about 0.1 seconds to about 30 minutes and at least one of argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ), or oxygen (O 2 ) to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation; and
c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°, wherein the at least one of argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ), oxygen (O 2 ) is supplied at a flow rate up to 5000 sccm and the ozone (O 3 ) is supplied at a flow rate up to 10 slpm.
13 . The method of claim 12 , wherein the RF power is supplied at a frequency of about 1 kHz to about 10 MHz, and
wherein the microwave power is supplied at a frequency of about 1 GHz to about 10 GHz.
14 . The method of claim 12 , wherein a pressure within the processing volume is about 1 mTorr to about 1 Torr.
15 . The method of claim 12 , wherein the substrate is processed for about 0.1 seconds to about 10 minutes.
16 . The method of claim 12 , wherein the at least one of microwave power or RF power is supplied using a pulsed wave.