Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technique that includes etching a crystalline film formed on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (1) supplying a boron-containing gas to the crystalline film; and (2) supplying a halide gas to the crystalline film.
1 . A method of processing a substrate, comprising:
etching an oxide film, which is formed on the substrate and contains an element that is not oxygen, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(1) supplying a boron-containing gas to the oxide film;
(2) supplying a halide gas to the oxide film; and
(3) supplying a gas containing a hydrogen group and the element to the oxide film,
wherein the boron-containing gas further contains a halogen element, and
wherein the halide gas includes at least one selected from the group of a HF gas, a ClF 3 gas, a Cl 2 gas, a NF 3 gas, a F 2 gas and a mixed gas of a F 2 gas and a NO gas.
2 . The method of claim 1 , wherein in the act of etching the oxide film, (3) is performed after (1) and (2).
3 . The method of claim 1 , wherein in the act of etching the oxide film, (1), (2), and (3) are sequentially performed.
4 . The method of claim 1 , wherein the oxide film is a metal oxide film.
5 . The method of claim 1 , wherein the gas supplied in (3) is a gas that is capable of converting at least one by-product containing halogen element generated by the act of (1) and (2) into a substance whose vapor pressure is higher than a vapor pressure of the at least one by-product generated by the act of (1) and (2).
6 . The method of claim 1 , wherein in the act of etching the oxide film, (3) is performed after (2).
7 . The method of claim 1 , wherein in the act of etching the oxide film, (3) is performed after (1) and (2) are sequentially performed a predetermined number of times.
8 . The method of claim 1 , wherein the oxide film is a crystalline film.
9 . The method of claim 8 , further comprising (4) forming the crystalline film by heating an amorphous film formed on the substrate to a predetermined crystallization processing temperature and crystallizing the amorphous film.
10 . The method of claim 9 , wherein in (4), the crystalline film is formed by performing a heat treatment on the amorphous film having a first film thickness, and
wherein in the act of etching the crystalline film, the etching on the crystalline film is performed until the crystalline film has a second film thickness smaller than the first film thickness.
11 . The method of claim 10 , wherein the crystallization processing temperature for crystallizing the amorphous film having the first film thickness is lower than a temperature required for crystallizing an amorphous film having the second film thickness.
12 . The method of claim 11 , wherein the act of etching the crystalline film is performed at a temperature equal to or lower than the crystallization processing temperature.
13 . The method of claim 9 , wherein the amorphous film is formed by performing a cycle a predetermined number of times, the cycle including non-simultaneously supplying a precursor gas and a reaction gas to the substrate.
14 . The method of claim 13 , wherein the gas supplied in (3) and the precursor gas are gases identical to each other.
15 . A method of manufacturing a semiconductor device comprising processing the substrate according to the method of claim 1 .
16 . The method of claim 1 , wherein the gas having the hydrogen group is a gas having a hydrocarbon group and the element.
17 . The method of claim 1 , wherein the boron-containing gas includes at least one selected from the group of a BCl 3 gas, a B 2 H 6 gas, a BH 3 gas, a B(N(CH 3 ) 2 ) 3 gas and a (C 2 H 5 ) 3 B gas.