Method of manufacturing semiconductor device and substrate processing system

1. A method of manufacturing a semiconductor device, the method comprising:

alternately repeating:

a process of supplying and exhausting an aluminum precursor into and from a processing chamber where the substrate is accommodated, and

a process of supplying and exhausting one of an oxidizing precursor and a nitriding precursor into and from the processing chamber to form an aluminum-containing insulation film on an electrode film formed on a surface of a substrate;

alternately repeating:

a process of supplying and exhausting a precursor into and from the processing chamber; and a process of supplying and exhausting an oxidizing precursor into and from the processing chamber to forming a high permittivity insulation film different from the aluminum-containing insulation film on the aluminum-containing insulation film; and

thermally diffusing aluminum in the aluminum-containing insulation film into the high permittivity insulation film by subjecting the substrate having the high permittivity insulation film thereon to a heat treatment process so as to dope the high permittivity insulation film.

2. The method of claim 1 , wherein the aluminum-containing insulation film is one of an aluminum oxide film and an aluminum nitride film.

3. The method of claim 1 , wherein the aluminum-containing insulation film is an aluminum oxide film having a thickness ranging from 0.1 nm to 0.3 nm.

4. The method of claim 1 , wherein the aluminum-containing insulation film is an aluminum oxide film having a thickness ranging from 0.1 nm to 0.2 nm.

5. The method of claim 1 , wherein the oxidizing precursor in the forming of the aluminum-containing insulation film is H 2 O, and the aluminum-containing insulation film is an aluminum oxide film.

6. The method of claim 5 , wherein the oxidizing precursor in the forming of the high permittivity insulation film is one of H 2 O, O 3 and an oxygen-containing substance activated by plasma.

7. The method of claim 1 , wherein an amount of the aluminum thermally diffused from the aluminum-containing insulation film into the high permittivity insulation film is controlled by adjusting a heat treatment condition of the heat treatment process.

8. The method of claim 1 , wherein in the performing of the heat treatment process, a heat treatment condition is controlled so as to obtain a predetermined aluminum concentration in the high permittivity insulation film after the heat treatment process.

9. The method of claim 1 , wherein the high permittivity insulation film is one of a hafnium-containing and zirconium-containing film.

10. The method of claim 1 , wherein the electrode film is a TiN film, the aluminum-containing insulation film is one of an Al 2 O 3 film and an AIN film, and the high permittivity insulation film is one of a HfAlO film, a HfO 2 film, a ZrO 2 film, a TiO 2 film, a Nb 2 O 5 film, a Ta 2 O 5 film, a SrTiO film, a BaSrTiO film and a PZT (lead zirconate titanate) film.

11. The method of claim 1 , wherein the electrode film is a TiN film, the aluminum-containing insulation film is an Al 2 O 3 film, and the high permittivity insulation film is one of a HfAlO film, a HfO 2 film and a ZrO 2 film.

12. The method of claim 1 , wherein the electrode film is a TiN film, the aluminum-containing insulation film is an Al 2 O 3 film, and the high permittivity insulation film is a HfAlO film.

13. A method of manufacturing a semiconductor device, the method comprising:

forming an aluminum-containing insulation film on an electrode film formed on a surface of a substrate;

forming a high permittivity insulation film different from the aluminum-containing insulation film on the aluminum-containing insulation film; and

thermally diffusing aluminum in the aluminum-containing insulation film into the high permittivity insulation film by subjecting the substrate having the high permittivity insulation film thereon to a heat treatment process.

14. A substrate processing system comprising

a first processing unit and

a second processing unit,

wherein the first processing unit comprises:

a first processing chamber configured to process a substrate;

an aluminum precursor supply system configured to supply an aluminum precursor into the first processing chamber;

a first precursor supply system configured to supply a precursor into the first processing chamber;

a second precursor supply system configured to supply one of an oxidizing precursor and a nitriding precursor into the first processing chamber;

an exhaust system configured to exhaust an inside of the first processing chamber; and

a controller configured to control the aluminum precursor supply system, the first precursor supply system, the second precursor supply system and the exhaust system, so as to: alternately repeat a process of supplying and exhausting the aluminum precursor into and from the first processing chamber where the substrate is accommodated and a process of supplying and exhausting one of the oxidizing precursor and the nitriding precursor into and from the first processing chamber to form an aluminum-containing insulation film on an electrode film formed on a surface of a substrate; and alternately repeat a process of supplying and exhausting a precursor into and from the first processing chamber and a process of supplying and exhausting an oxidizing precursor into and from the first processing chamber to form a high permittivity insulation film different from the aluminum-containing insulation film on the aluminum-containing insulation film, and

wherein the second processing unit comprises:

a second processing chamber configured to process the substrate,

a heater configured to heat the substrate accommodated in the second processing chamber, and

a controller configured to control the heater so as to thermally diffuse aluminum in the aluminum-containing insulation film into the high permittivity insulation film by subjecting the substrate having the high permittivity insulation film thereon to a heat treatment process so as to dope the high permittivity insulation film.

15. The method of claim 1 , further comprising:

forming an electrode film on the high permittivity insulation film after the heat treatment.

16. The method of claim 1 , further comprising:

forming a second aluminum-containing insulation film on the high permittivity insulation film prior to the heat treatment by alternately repeating: a process of supplying and exhausting an aluminum precursor into and from a processing chamber where the substrate is accommodated; and a process of supplying and exhausting one of an oxidizing precursor and a nitriding precursor into and from the processing chamber; and

thermally diffusing aluminum in the second aluminum-containing insulation film into the high permittivity insulation film so as to dope the high permittivity insulation film by the heat treatment process.

17. The method of claim 16 , further comprising:

forming an electrode film on the second aluminum-containing insulation film after the heat treatment.

18. The method of claim 13 , further comprising:

forming a second aluminum-containing insulation film on the high permittivity insulation film prior to the heat treatment; and

thermally diffusing aluminum in the second aluminum-containing insulation film into the high permittivity insulation film by the heat treatment process so as to dope the high permittivity insulation film.

19. The method of claim 18 , further comprising:

forming an electrode film on the second aluminum-containing insulation film after the heat treatment.

20. The method of claim 1 , wherein a heat treatment condition of the heat treatment process is adjusted such that a concentration of the aluminum in the high permittivity insulation film ranges from 4% to 5%.