Integrated planar transistors and memory cell array architectures
Memory device architectures including integrated high voltage planar transistor support circuitry underlying memory cell arrays are discussed related to improving density and device performance Such memory device architectures include planar transistors having wide band gap channel materials integrated with memory cell arrays using a number of metallization layers. The metallization layers between the planar transistors and the memory cells are predominantly tungsten and the metallization layers in which the memory cells are embedded are predominantly a metal other than tungsten.
1 . An apparatus, comprising:
a planar transistor comprising a gallium nitride channel structure, a gate electrode, and a gate dielectric layer between the gallium nitride channel structure and the gate electrode, the gallium nitride channel structure having a band gap of not less than 3 eV;
a memory cell over and coupled to the planar transistor, the memory cell comprising a select transistor and a capacitor;
a plurality of first metallization layers between the planar transistor and the memory cell, the first metallization layers predominately comprising tungsten; and
a plurality second metallization layers over and laterally adjacent the memory cell, the second metallization layers predominately comprising a metal other than tungsten.
2 . The apparatus of claim 1 , wherein the gate dielectric layer comprises a thickness between the gallium nitride channel structure and the gate electrode of not less than 50 nm, and wherein the gate dielectric layer comprises silicon and oxygen.
3 . The apparatus of claim 1 , wherein the gate dielectric layer comprises a multilayer stack, the multilayer stack comprising a first layer comprising silicon and oxygen and a second layer comprising oxygen and one of hafnium or zirconium.
4 . The apparatus of claim 1 , wherein the first metallization layers comprise not less than 90% tungsten and the second metallization layers comprise not less than 90% copper.
5 . The apparatus of claim 1 , wherein a first metallization structure of the second metallization layers is between the planar transistor and the select transistor, the first metallization structure comprising a word line coupled to a second gate electrode of the select transistor.
6 . The apparatus of claim 5 , wherein a second metallization structure of the second metallization layers is over the select transistor, the second metallization structure comprising a bit line coupled to a source or drain of the select transistor.
7 . The apparatus of claim 1 , wherein the gallium nitride channel structure comprises a surface extending laterally between a source and a drain of the planar transistor, the gate electrode interfacing with the gallium nitride channel structure only along the surface of the planar transistor.
8 . The apparatus of claim 1 , further comprising:
a power supply coupled to the planar transistor and/or the memory cell.
9 . An apparatus, comprising:
support circuitry comprising a plurality of planar field effect transistors (FETs), individual ones of the planar FETs comprising a gallium nitride channel structure or a silicon carbide channel structure, a gate electrode, and a gate dielectric layer between the gallium nitride channel structure or the silicon carbide channel structure and the gate electrode; and
an array of memory cells over and monolithically integrated with the support circuitry via a plurality of metallization layers, individual ones of the memory cells comprising a select transistor and a capacitor, wherein the plurality of metallization layers comprise first metallization layers between the planar FETs and the array of memory cells and second metallization layers over and laterally adjacent the array of memory cells, wherein the first metallization layers predominately comprise tungsten and the second metallization layers predominately comprises copper.
10 . The apparatus of claim 9 , wherein the gate dielectric layer comprises a thickness between the gallium nitride channel structure or the silicon carbide channel structure and the gate electrode of not less than 50 nm, and wherein the gate dielectric layer comprises silicon and oxygen.
11 . The apparatus of claim 9 , wherein the gate dielectric layer comprises a multilayer stack, the multilayer stack comprising a first layer comprising silicon and oxygen and a second layer comprising oxygen and one of hafnium or zirconium.
12 . The apparatus of claim 9 , wherein the first metallization layers comprise not less than 90% tungsten and the second metallization layers comprise not less than 90% copper.
13 . The apparatus of claim 9 , wherein a first metallization structure of the second metallization layers is between a first of the planar FETs and a first select transistor, the first metallization structure comprising a word line coupled to a second gate electrode of the first select transistor.
14 . The apparatus of claim 13 , wherein a second metallization structure of the second metallization layers is over the first select transistor, the second metallization structure comprising a bit line coupled to a source or drain of the first select transistor.
15 . The apparatus of claim 9 , wherein the gallium nitride channel structure or the silicon carbide channel structure comprises a surface extending laterally between a source and a drain of each of the planar FETs, the gate electrode interfacing with the gallium nitride channel structure or the silicon carbide channel structure only along the surface.
16 . The apparatus of claim 9 , further comprising:
a power supply coupled to the planar FETs and/or the array of memory cells.
17 . An apparatus, comprising:
a planar transistor comprising a silicon carbide channel structure, a gate electrode, and a gate dielectric layer between the silicon carbide channel structure and the gate electrode, the silicon carbide channel structure having a band gap of not less than 3 eV;
a memory cell over and coupled to the planar transistor, the memory cell comprising a select transistor and a capacitor;
a plurality of first metallization layers between the planar transistor and the memory cell, the first metallization layers predominately comprising tungsten; and
a plurality second metallization layers over and laterally adjacent the memory cell, the second metallization layers predominately comprising a metal other than tungsten.
18 . The apparatus of claim 17 , wherein the gate dielectric layer comprises a thickness between the silicon carbide channel structure and the gate electrode of not less than 50 nm, and wherein the gate dielectric layer comprises silicon and oxygen.
19 . The apparatus of claim 17 , wherein the gate dielectric layer comprises a multilayer stack, the multilayer stack comprising a first layer comprising silicon and oxygen and a second layer comprising oxygen and one of hafnium or zirconium.
20 . The apparatus of claim 17 , wherein the first metallization layers comprise not less than 90% tungsten and the second metallization layers comprise not less than 90% copper.
21 . The apparatus of claim 17 , wherein a first metallization structure of the second metallization layers is between the planar transistor and the select transistor, the first metallization structure comprising a word line coupled to a second gate electrode of the select transistor, and wherein a second metallization structure of the second metallization layers is over the select transistor, the second metallization structure comprising a bit line coupled to a source or drain of the select transistor.
22 . The apparatus of claim 17 , wherein the silicon carbide channel structure comprises a surface extending laterally between a source and a drain of the planar transistor, the gate electrode interfacing with the silicon carbide channel structure only along the surface of the planar transistor.
23 . The apparatus of claim 17 , further comprising:
a power supply coupled to the planar transistor and/or the memory cell.