Semiconductor device
A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance. Both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip.
1 . A semiconductor device, comprising:
an insulated circuit substrate, including
a base plate,
a resin layer disposed on a front surface of the base plate, and
a circuit pattern disposed on a front surface of the resin layer; and
a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance, wherein
both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip, and
in a depth direction of the semiconductor device, a bottommost portion of the circuit pattern is closer to the base plate than is a topmost portion of the resin layer, and a topmost portion of the circuit pattern is farther from the base plate than is the topmost portion of the resin layer.
2 . The semiconductor device according to claim 1 , further comprising
another semiconductor chip bonded to the front surface of the circuit pattern, the another semiconductor chip being adjacent to the semiconductor chip in a side view of the semiconductor device,
wherein another side edge of the semiconductor chip, and a side edge of the another semiconductor chip adjacent to said another side edge, have a gap therebetween in the side view, the gap being greater than or equal to twice the predetermined distance.
3 . The semiconductor device according to claim 2 , further comprising a wiring member bonded to the front surface of the circuit pattern in the gap.
4 . The semiconductor device according to claim 2 , further comprising a groove formed in the gap in the front surface of the circuit pattern, the groove being parallel to the semiconductor chip and the another semiconductor chip in the plan view.
5 . The semiconductor device according to claim 4 , wherein
the circuit pattern has a heat spreading area that is an area in which heat generated by the semiconductor chip is spreadable as the heat moves toward the resin layer, and
the groove has such a depth that the groove does not reach an outermost edge of the heat spreading area, the outermost edge being beveled at 45 degrees in the side view.
6 . The semiconductor device according to claim 1 , wherein the circuit pattern is embedded in the resin layer in such a manner that the front surface of the circuit pattern is flush with the front surface of the resin layer.
7 . The semiconductor device according to claim 1 , wherein
the circuit pattern has a heat spreading area that is an area in which heat generated by the semiconductor chip is spreadable as the heat moves toward the resin layer, an outermost edge of the heat spreading area being beveled at 45 degrees in a side view of the semiconductor device,
the circuit pattern is chamfered, and
the outermost edge of the heat spreading area is within the chamfered circuit pattern.
8 . The semiconductor device according to claim 1 , wherein the circuit pattern has a sag at a first side thereof facing the resin layer, and has a burr at a second side thereof that is a side of the front surface of the circuit pattern and opposite to the first side.
9 . The semiconductor device according to claim 1 , further comprising
a non-disposition circuit pattern disposed together with the circuit pattern on the front surface of the resin layer, the non-disposition circuit pattern being a pattern on which the semiconductor chip is not disposed,
wherein the non-disposition circuit pattern is thinner than the circuit pattern.
10 . The semiconductor device according to claim 9 , wherein
the semiconductor chip has a control electrode, and
the non-disposition circuit pattern is a control circuit pattern that is electrically connected to the control electrode of the semiconductor chip.
11 . The semiconductor device according to claim 1 , wherein the length of the one side of the semiconductor chip is less than or equal to 5.5 mm.