Image sensor device and methods of formation

1 . An image sensor device, comprising:

a pixel sensor array; and

a black level correction (BLC) region, adjacent to the pixel sensor array, comprising:

a sensing region;

a light-blocking layer over the sensing region; and

an anti-reflection array, in the light-blocking layer, comprising a plurality of recessed portions in the light-blocking layer,

wherein a ratio of a depth of one or more recessed portions, of the plurality of recessed portions, to a thickness of the light-block layer is in a range from 0.5:1 to 0.9:1.

2 . The image sensor device of claim 1 , wherein a top surface of the light-blocking layer in a non-recessed portion of the light-blocking layer is at a first height in the image sensor device that is greater relative to a second height of the top surface of the light-blocking layer in a recessed portion of the plurality of recessed portions.

3 . The image sensor device of claim 1 , wherein the plurality of recessed portions are arranged in a grid pattern in the anti-reflection array.

4 . The image sensor device of claim 1 , wherein the plurality of recessed portions are arranged in an offset pattern in the anti-reflection array.

5 . The image sensor device of claim 1 , wherein the plurality of recessed portions are arranged in a row in the anti-reflection array.

6 . The image sensor device of claim 1 , wherein the anti-reflection array is configured to impede incident light from being reflected off of the BLC region toward the pixel sensor array.

7 . An image sensor device, comprising:

a pixel sensor array; and

a black level correction (BLC) region, adjacent to the pixel sensor array, comprising:

a sensing region;

a light-blocking layer over the sensing region;

an anti-reflection film over the light-blocking layer; and

an anti-reflection array, in the anti-reflection film and in the light-blocking layer, comprising a plurality of recessed portions that extend through the anti-reflection film and into the light-blocking layer.

8 . The image sensor device of claim 7 , wherein the anti-reflection film comprises a single-layer structure.

9 . The image sensor device of claim 7 , wherein the anti-reflection film comprises a plurality of stacked layers.

10 . The image sensor device of claim 9 , wherein the plurality of stacked layers comprise:

a first layer having a first refractive index; and

a second layer having a second refractive index,

wherein the first refractive index and the second refractive index are different refractive indices.

11 . The image sensor device of claim 10 , wherein a ratio of the second refractive index to the first refractive index is included in a range of approximately 1:1 to approximately 1.3:1.

12 . The image sensor device of claim 7 , wherein the anti-reflection film comprises at least one of:

titanium nitride (TiN),

silicon oxide (SiO x ), or

silicon oxynitride (SiON).

13 . The image sensor device of claim 7 , wherein a refractive index of the anti-reflection film is included in a range of approximately 1.14 to approximately 1.48.

14 . A method, comprising:

forming, in a substrate of an image sensor device, one or more photodiodes in a pixel sensor array of the image sensor device;

forming a metal layer over the one or more photodiodes and over a sensing region in a black level correction (BLC) region of the image sensor device;

removing first portions of the metal layer in the pixel sensor array to form a metal grid above the one or more photodiodes; and

removing second portions of the metal layer in the BLC region to form an anti-reflection array in the metal layer in the BLC region,

wherein the metal layer in the BLC region corresponds to a light-blocking layer over the sensing region in the BLC region.

15 . The method of claim 14 , wherein removing the second portions of the metal layer in the BLC region comprises:

removing the second portions of the metal layer in the BLC region after removing the first portions of the metal layer in the pixel sensor array.

16 . The method of claim 14 , wherein removing the first portions of the metal layer in the pixel sensor array comprises:

removing the first portions of the metal layer in the pixel sensor array while the metal layer in the BLC region is masked.

17 . The method of claim 14 , further comprising:

forming an oxide layer on the metal layer after removing the first portions of the metal layer in the pixel sensor array and prior to removing the second portions of the metal layer in the BLC region.

18 . The method of claim 17 , further comprising:

removing portions of the oxide layer in the BLC region to form the anti-reflection array.

19 . The method of claim 14 , further comprising:

forming an anti-reflection film on the metal layer after removing the first portions of the metal layer in the pixel sensor array and prior to removing the second portions of the metal layer in the BLC region.

20 . The method of claim 19 , wherein the anti-reflection film comprises silicon oxynitride (SiON); and

wherein forming the anti-reflection film comprises:

providing a flow of nitrogen (N) into a processing chamber in which the image sensor device is located; and

providing a flow of oxygen (O) into the processing chamber,

wherein a ratio of the flow of oxygen to the flow of nitrogen is included in a range of approximately 0.9:1 to approximately 9:1.