Light-emitting device, method of manufacturing the same, and operating method of the same
Provided are a light-emitting device, a method of manufacturing the light-emitting device, and an operating method of the light-emitting device, wherein the light-emitting device includes a first conductive layer and a light-emitting group represented by Formula 1: *-A 3 -(A 1 ) m1 -(A 2 ) m2 . Formula 1 The detailed description of Formula 1 is the same as described in the present specification.
1 . A light-emitting device comprising:
a first conductive layer; and
a light-emitting group represented by Formula 1, wherein
the light-emitting group is chemically bonded to an atom on a surface of the first conductive layer:
*-A 3 -(A 1 ) m1 -(A 2 ) m2 Formula 1
wherein, in Formula 1,
* indicates a chemical binding site to an atom on the surface of the first conductive layer,
A 3 is an atom bonded to the atom on the surface of the first conductive layer,
A 1 is a linking group,
A 2 is a light-emitting moiety, and
m1 and m2 are each independently an integer from 1 to 10, wherein, when m1 is 2 or more, two or more of A 1 are identical to or different from each other, and when m2 is 2 or more, two or more of A 2 are identical to each other or different from each other,
wherein a monolayer comprising a plurality of light-emitting groups is located on the surface of the first conductive layer,
wherein the monolayer comprising the plurality of light-emitting groups is in direct contact with the surface of the first conductive layer, and
wherein a thickness of the monolayer is from about 0.1 nm to about 5.0 nm.
2 . The light-emitting device of claim 1 , wherein the first conductive layer comprises magnesium (Mg), calcium (Ca), scandium (Sc), yttrium (Y), lanthanum (La), actinium (Ac), titanium (Ti), zirconium (Zr), hafnium (Hf), cerium (Ce), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), neodymium (Nd), manganese (Mn), rhenium (Re), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), zinc (Zn), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), bismuth (Bi), boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te), carbon, nitrogen, oxygen, or any combination thereof.
3 . The light-emitting device of claim 1 , wherein the monolayer is a self-assembled monolayer.
4 . The light-emitting device of claim 1 , wherein * in Formula 1 indicates a chemical binding site to a metal, a metalloid, carbon, nitrogen, or oxygen on the surface of the first conductive layer.
5 . The light-emitting device of claim 1 , wherein the first conductive layer comprises silver (Ag), gold (Au), zinc (Zn), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), or any combination thereof, and
* in Formula 1 indicates a chemical binding site with silver (Ag), gold (Au), zinc (Zn), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), or tin (Sn) on the surface of the first conductive layer.
6 . The light-emitting device of claim 1 , wherein A 3 of Formula 1 is O or S.
7 . The light-emitting device of claim 1 , wherein A 1 of Formula 1 is a single bond, a substituted or unsubstituted C 2 -C 60 alkylene group, a substituted or unsubstituted C 2 -C 60 alkynylene group, a substituted or unsubstituted C 2 -C 60 alkenylene group, a substituted or unsubstituted C 5 -C 30 carbocyclic group, or a substituted or unsubstituted C 2 -C 30 heterocyclic group.
8 . The light-emitting device of claim 1 , wherein A 2 in Formula 1 is a monovalent group derived from a phosphorescent luminescent compound, a fluorescent luminescent compound, or a quantum dot.
9 . The light-emitting device of claim 1 , wherein A 2 in Formula 1 is a monovalent group derived from a transition metal-containing organometallic compound.
10 . The light-emitting device of claim 1 , wherein A 2 of Formula 1 is a monovalent group derived from a fluorescent luminescent compound, wherein the fluorescent luminescent compound is a prompt-fluorescence luminescent compound or a delayed-fluorescence luminescent compound.
11 . The light-emitting device of claim 1 , further comprising a second conductive layer facing the first conductive layer,
wherein A 2 of Formula 1 faces the second conductive layer.
12 . The light-emitting device of claim 11 , further comprising an interlayer located between the first conductive layer and the second conductive layer, wherein
the interlayer comprises:
a hole transport material, a light-emitting material, an electron transport material, or a combination thereof; or
an insulating material, an electrolyte, air, or inert gas.
13 . The light-emitting device of claim 1 , wherein an electron density of the light-emitting group changes according to a change in a voltage applied to the first conductive layer.
14 . The light-emitting device of claim 1 , wherein a wavelength of light emitted from the light-emitting group changes according to a change in a voltage applied to the first conductive layer.
15 . The light-emitting device of claim 1 , wherein a wavelength of light emitted from the light-emitting group continuously changes according to a continuous change in a voltage applied to the first conductive layer continuously.
16 . A method of manufacturing a light-emitting device, the method comprising:
providing a first conductive layer; and
chemically bonding a light-emitting group represented by Formula 1 to an atom on a surface of the first conductive layer by bringing the first conductive layer into contact with a compound represented by Formula 1A:
A 4 -A 3 -(A 1 ) m1 -(A 2 ) m2 Formula 1A
*-A 3 -(A 1 ) m1 -(A 2 ) m2 Formula 1
wherein, in Formulae 1A and 1,
A 4 is a moiety,
* indicates a chemical binding site to an atom on the surface of the first conductive layer,
A 3 is an atom bonded to an atom on the surface of the first conductive layer,
A 1 is a linking group,
A 2 is a light-emitting moiety, and
m1 and m2 are each independently an integer from 1 to 10, wherein, when m1 is 2 or more, two or more of A 1 are identical to or different from each other, and when m2 is 2 or more, two or more of A 2 are identical to each other or different from each other,
wherein a monolayer comprising a plurality of light-emitting groups is located on the surface of the first conductive layer,
wherein the monolayer comprising the plurality of light-emitting groups is in direct contact with the surface of the first conductive layer, and
wherein a thickness of the monolayer is from about 0.1 nm to about 5.0 nm.
17 . An operating method of a light-emitting device, the operating method comprising controlling a voltage applied to the first conductive layer of the light-emitting device of claim 1 .
18 . The operating method of claim 17 , wherein the controlling of the voltage applied to the first conductive layer of the light-emitting device comprises continuously or discontinuously changing the voltage applied to the first conductive layer of the light-emitting device.