Silicone compositions and their applications
Provided are fast curing two-part condensation curable silicone compositions which cure by using titanium and/or zirconium based catalysts to generate cured gel materials which are suitable for encapsulating and/or potting electrical and/or electronic articles.
1 . A multiple part condensation curable gel composition comprising:
(i) at least one condensation curable silyl terminated polymer having at least two hydroxyl functional groups per molecule and a viscosity<1000 mPas at 25° C.;
(ii) a cross-linker selected from silyl functional molecules having at least two silyl groups, each silyl group containing at least two hydrolysable groups, and having a viscosity≤1000 mPas at 25° C., provided such viscosity is at least 75% of the viscosity of polymer (i);
(iii) a condensation catalyst selected from the group consisting of titanates, zirconates, and combinations thereof; and
(iv) one or more reinforcing and/or non-reinforcing filler(s);
wherein:
(a) catalyst (iii) and filler(s) (iv) are not stored together before cure of the composition;
(b) the ratio of Si—OH groups:Si-hydrolysable groups in the composition is from 0.4:1 to 0.95:1; and
(c) upon curing the composition has a tack free time of ≤1 hour and a flip over time of ≤3 hours.
2 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein cross-linker (ii) is a silicone or an organic polymer chain bearing alkoxy functional terminal groups.
3 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein cross-linker (ii) is a silicone polymer chain bearing alkoxy functional terminal groups.
4 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein polymer (i) additionally comprises polydiorganosiloxanes which have one silanol containing terminal group and one unreactive terminal group.
5 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein cross-linker (ii) additionally comprises silyl functional molecules having at least two silyl groups, where at least one silyl group contains one hydrolysable group.
6 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein the composition is stored in two-parts, i) a base part comprising polymer (i) and filler(s) (iv), and ii) a curing part comprising cross-linker (ii) and catalyst (iii).
7 . The multiple part condensation curable gel composition in accordance with claim 1 , which additionally comprises one or more thermally and/or electrically conductive filler(s).
8 . The multiple part condensation curable gel composition in accordance with claim 1 , which additionally comprises one or more adhesion promoter(s) in an amount of from 0.1 to 2 wt. % of the total composition.
9 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein catalyst (iii) is present in a molar amount which is at least 50% of the molar amount of water present in the composition, from filler(s) (iv), as determined in accordance with ISO 787-2:1981.
10 . The multiple part condensation curable gel composition in accordance with claim 1 , wherein cross-linker (ii) has a viscosity≤1000 mPas at 25° C., provided such viscosity is at least 90% of the viscosity of polymer (i).
11 . A method of preparing a cured gel material from the multiple part condensation curable gel composition in accordance with claim 1 , the method comprising:
mixing the multiple parts of the condensation curable gel composition together to form a mixture; and
applying the mixture onto a substrate and allowing to cure.
12 . A cured gel material which is the reaction product of the multiple part condensation curable gel composition in accordance with claim 1 , wherein:
(a) catalyst (iii) and filler(s) (iv) are not stored together before cure of the composition;
(b) the molar ratio of Si—OH groups:Si-alkoxy groups in the composition is from 0.4:1 to 0.95:1; and
(c) upon curing the composition has a tack free time of ≤1 hour and a flip over time of ≤3 hours.
13 . An electrical or electronic part encapsulated or potted with the cured gel material in accordance with claim 12 , wherein the electrical or electronic part is:
i) a metal substrate selected from the group consisting of gold, silver, aluminium, copper, and electroless nickel; and/or
ii) a polymeric substrate selected from the group consisting of FR4, Nylon, polycarbonate, polymethylmethacrylate, polybutylene terephthalate, and liquid crystal polymers.
14 . An electrical or electronic part encapsulated or potted with the cured gel material in accordance with claim 12 , comprising a light emitting device comprising one or more a light-emitting diodes (LED), or liquid crystal displays (LCD).
15 . An electrical or electronic part encapsulated or potted with the cured gel material in accordance with claim 12 , selected from the group consisting of a chip, one or more wires, one or more sensors, one or more electrodes, integrated circuits (ICs), power devices, insulated gate bipolar transistor (IGBT), a rectifier, a Schottky diode, a PiN diode, a merged PiN/Schottky (MPS) rectifier and Junction barrier diode, bipolar junction transistors (BJTs), a thyristor, a metal oxide field effect transistor (MOSFET), a high electron mobility transistor (HEMT), static induction transistors (SIT), and a power transistor.
16 . An encapsulant or a pottant for electrical and/or electronic devices, solar photovoltaic modules, and/or light emitting diodes, wherein the encapsulant or pottant is formed from the multiple part condensation curable gel composition in accordance with claim 1 .
17 . Electronic devices, solar photovoltaic modules and/or light emitting diodes comprising an encapsulant or a pottant, wherein the encapsulant or pottant comprises the cured gel material in accordance with claim 12 .
18 . The electronic devices, solar photovoltaic modules, and/or light emitting diodes in accordance with claim 17 , selected from the group consisting of a chip, one or more wires, one or more sensors, one or more electrodes, integrated circuits (ICs), power devices, insulated gate bipolar transistor (IGBT), a rectifier, a Schottky diode, a PiN diode, a merged PiN/Schottky (MPS) rectifier and Junction barrier diode, bipolar junction transistors (BJTs), a thyristor, a metal oxide field effect transistor (MOSFET), a high electron mobility transistor (HEMT), static induction transistors (SIT), and a power transistor.