Reduction of on-die parasitic capacitance for 5G filter design with high isolation
An acoustic wave filter assembly having reduced on-die capacitance and improved isolation for high-frequency applications. The acoustic wave filter assembly includes a filter port, an antenna port, an acoustic wave filter connected between the filter port and the antenna port, one or more ground pins connected between the filter port and the antenna port, and a metallic guard ring extending around the acoustic wave filter assembly. At least one of the one or more ground pins is connected to the metallic guard ring. A diplexer, multiplexer, radio-frequency module and wireless device are also provided.
1 . A filter assembly, comprising:
a metallic guard ring extending around the filter assembly;
an antenna port surrounded by the metallic guard ring;
a filter port surrounded by the metallic guard ring;
an acoustic wave filter connected between the antenna port and the filter port, the acoustic wave filter including one or more bulk acoustic wave resonators; and
one or more ground pins connected between the filter port and the antenna port, at least one of the one or more ground pins being further connected to the metallic guard ring.
2 . The filter assembly of claim 1 wherein the acoustic wave filter is configured to filter a transmit signal received at the filter port to a cellular frequency pass band and output the filtered transmit signal at the antenna port.
3 . The filter assembly of claim 2 wherein the acoustic wave filter has a pass band one of between approximately 4.4 GHz and 5 GHz or between approximately 3.3 GHZ and 4.2 GHz.
4 . The filter assembly of claim 1 wherein the acoustic wave filter is a band-pass filter.
5 . The filter assembly of claim 1 wherein the acoustic wave filter is configured to filter a receive signal received at the antenna port to a cellular frequency pass band and output the filtered receive signal at the filter port.
6 . A diplexer comprising:
a first acoustic wave filter connected between an antenna port and a first filter port, the first acoustic wave filter including one or more bulk acoustic wave resonators;
a second acoustic wave filter connected between the antenna port and a second filter port, the second acoustic wave filter including one or more bulk acoustic wave resonators;
a metallic guard ring extending around the first and second acoustic wave filters and about the antenna port, first filter port, and second filter port; and
one or more ground pins connected between the antenna port and the first and second filter ports, at least one of the one or more ground pins being further connected to the metallic guard ring.
7 . The diplexer of claim 6 wherein the diplexer is arranged on a single semiconductor chip.
8 . The diplexer of claim 6 wherein the first acoustic wave filter is configured to filter a transmit signal received at the first filter port to a first frequency pass band and output the filtered transmit signal to the antenna port.
9 . The diplexer of claim 6 wherein the first acoustic wave filter is configured to filter a receive signal received at the antenna port to a first frequency pass band and output the filtered receive signal to the first filter port.
10 . The diplexer of claim 6 wherein the second acoustic wave filter is configured to filter a transmit signal received at the second filter port to a second frequency pass band and output the filtered transmit signal to the antenna port.
11 . The diplexer of claim 6 wherein the second acoustic wave filter is configured to filter a receive signal received at the antenna port to a second frequency pass band and output the filtered receive signal to the second filter port.
12 . The diplexer of claim 6 wherein the first acoustic wave filter is a band-pass filter having a pass band one of between 4.4 GHz and 5 GHz or between 3.3 GHZ and 4.2 GHz.
13 . A multiplexer formed on a semiconductor chip and comprising:
a first filter assembly including a first antenna port, one or more first filter ports, one or more first acoustic wave filters connected between the first antenna port and the one or more first filter ports, and one or more ground pins;
a second filter assembly including a second antenna port, one or more second filter ports, one or more second acoustic wave filters connected between the second antenna port and the one or more second filter ports, and one or more ground pins, at least one of the one or more second filter ports being located between the first antenna port and the second antenna port; and
a metallic guard ring extending around the first and second filter assemblies, at least one of the one or more ground pins of the first filter assembly being connected to the metallic guard ring, and at least one of the one or more ground pins of the second filter assembly being connected to the metallic guard ring.
14 . The multiplexer of claim 13 further comprising a conductive strip extending across a surface of the semiconductor chip between the first filter assembly and the second filter assembly, the conductive strip being connected at a first end and a second end to the metallic guard ring.
15 . The multiplexer of claim 14 wherein the conductive strip is further connected to a ground pin located between the first filter assembly and the second filter assembly.
16 . The multiplexer of claim 13 wherein the first and second filter assemblies are diplexers.
17 . The multiplexer of claim 13 wherein the multiplexer is formed on a single semiconductor chip.
18 . A radio-frequency module, comprising:
a packaging substrate configured to receive a plurality of components;
a first diplexer including a first filter assembly including a first antenna port, one or more first filter ports, one or more first acoustic wave filters connected between the first antenna port and the one or more first filter ports, and one or more ground pins, and a second filter assembly including a second antenna port, one or more second filter ports, one or more second acoustic wave filters connected between the second antenna port and the one or more second filter ports, and one or more ground pins, at least one of the one or more second filter ports being located between the first antenna port and the second antenna port;
a second diplexer including a plurality of acoustic wave filters and one or more ground pins; and
a metallic guard ring extending around the first and second diplexers, at least one of the one or more ground pins of the first diplexer being connected to the metallic guard ring, and at least one of the one or more ground pins of the second diplexer being connected to the metallic guard ring.
19 . The radio-frequency module of claim 18 wherein the radio-frequency module is a front-end module.
20 . A wireless device, comprising:
a transceiver configured to generate a radio-frequency signal;
a front-end module in communication with the transceiver, the front-end module including a packaging substrate configured to receive a plurality of components, the front-end module further including a first diplexer a first filter assembly including a first antenna port, one or more first filter ports, one or more first acoustic wave filters connected between the first antenna port and the one or more first filter ports, and one or more ground pins, and a second filter assembly including a second antenna port, one or more second filter ports, one or more second acoustic wave filters connected between the second antenna port and the one or more second filter ports, and one or more ground pins, at least one of the one or more second filter ports being located between the first antenna port and the second antenna port, a second diplexer having a plurality of acoustic wave filters and one or more ground pins, and a metallic guard ring extending around the first and second diplexers, at least one of the one or more ground pins of the first diplexer being connected to the metallic guard ring, and at least one of the one or more ground pins of the second diplexer being connected to the metallic guard ring; and
an antenna in communication with the front-end module.