Optoelectronic semiconductor device with contact structures and a reflective layer on a first main surface of a semiconductor layer sequence and method for producing an optoelectronic semiconductor device
An optoelectronic semiconductor device may include a semiconductor layer sequence, a directionally reflective layer being arranged on the first main surface of the semiconductor layer sequence, a first contact structure comprising a first current spreading structure arranged on a first surface of a first semiconductor layer of the semiconductor layer sequence, a second contact structure comprising a second current spreading structure arranged on a first surface of a second semiconductor layer of the layer stack, wherein the first current spreading structure and the second current spreading structure each consist of at least one transparent conductive oxide. Moreover, a method for producing an optoelectronic semiconductor device is described.
1 . An optoelectronic semiconductor device comprising:
a semiconductor layer sequence comprising:
a first semiconductor layer having a first surface
a second semiconductor layer having a first surface
a first main surface and a second main surface opposite to the first main surface, wherein the first surfaces of the first semiconductor layer and the second semiconductor layer are at least partly arranged at the first main surface;
a directionally reflective layer being arranged on the first main surface;
a first contact structure for electrically connecting the first semiconductor layer comprising a first current spreading structure being arranged on the first surface of the first semiconductor layer and partly adjoining the at least one directionally reflective layer; wherein the first current spreading structure comprises a current spreading layer and a contact layer, wherein the contact layer is a single layer and directly adjoins the first semiconductor layer, and
a second contact structure for electrically connecting the second semiconductor layer comprising a second current spreading structure being arranged on the first surface of the second semiconductor layer and partly adjoining the at least one directionally reflective layer; wherein the first current spreading structure and the second current spreading structure each consist of at least one transparent conductive oxide, and wherein the contact layer is different from the current spreading layer with respect to its material composition and thickness.
2 . The optoelectronic semiconductor device according to claim 1 , wherein the current spreading layer consists of at least one transparent conductive oxide.
3 . The optoelectronic semiconductor device according to claim 1 , wherein the current spreading layer is a multilayer comprising at least two sublayers, wherein the two sublayers differ in their material composition and/or thickness.
4 . The optoelectronic semiconductor device according to claim 1 , wherein the contact layer and the current spreading layer are spaced apart, and the directionally reflective layer is arranged between the contact layer and the current spreading layer.
5 . The optoelectronic semiconductor device according to claim 1 , wherein the second current spreading structure comprises a current spreading layer, which consists of at least one transparent conductive oxide.
6 . The optoelectronic semiconductor device according to claim 5 , wherein the current spreading layer of the second current spreading structure is a multilayer comprising at least two sublayers, wherein the two sublayers differ in their material composition and/or thickness.
7 . The optoelectronic semiconductor device according to claim 5 , wherein the current spreading layer of the first current spreading structure partly laterally surrounds the current spreading layer of the second current spreading structure in a plan view on the first main surface.
8 . The optoelectronic semiconductor device according to claim 1 , further comprising an omnidirectionally reflective layer arranged on a side of the directionally reflective layer facing away from the semiconductor layer sequence.
9 . The optoelectronic semiconductor device according to claim 8 , wherein the omnidirectionally reflective layer is part of the first contact structure and the second contact structure.
10 . The optoelectronic semiconductor device according to claim 1 , wherein the first semiconductor layer comprises a recess, and the second semiconductor layer is arranged at a bottom of the recess.
11 . The optoelectronic semiconductor device according to claim 1 , wherein the contact layer is thinner than the current spreading layer.
12 . A method for producing an optoelectronic semiconductor device; wherein the method comprises:
providing a semiconductor layer sequence comprising:
a first semiconductor layer having a first surface;
a second semiconductor layer having a first surface;
a first main surface and a second main surface opposite to the first main surface;
applying a directionally reflective layer on the first main surface;
producing a first contact structure for electrically connecting the first semiconductor layer comprising a first current spreading structure being arranged on the first surface of the first semiconductor layer and partly adjoining the at least one directionally reflective layer, wherein the first current spreading structure comprises a current spreading layer and a contact layer, wherein the contact layer is a single layer and directly adjoins the first semiconductor layer;
producing a second contact structure for electrically connecting the second semiconductor layer comprising a second current spreading structure being arranged on the first surface of the second semiconductor layer and partly adjoining the at least one directionally reflective layer; wherein the first current spreading structure and the second current spreading structure are each made of at least one transparent conductive oxide, and wherein the contact layer is different from the current spreading layer with respect to its material composition and thickness.
13 . The method according to claim 12 , further comprising:
depositing the contact layer of the first current spreading structure on the first main surface
producing a recess extending through the contact layer and the first semiconductor layer up to the second semiconductor layer; and
depositing a current spreading layer of the second current spreading structure in the recess on the second semiconductor layer, wherein the contact layer and the current spreading layer of the second current spreading structure are made of at least one transparent conductive oxide.
14 . The method according to claim 13 , wherein, during deposition of the current spreading layer of the second current spreading structure an oxygen flow is adjusted in such a way that an absorption coefficient of the current spreading layer is as low as possible.
15 . The method according to claim 12 , wherein the current spreading layer of the first current spreading structure is applied to the contact layer.
16 . The method according to claim 13 , wherein the current spreading layer of the first current spreading structure and the current spreading layer of the second current spreading structure are produced in one method step.