Determining reference voltage offsets for read operations in a memory system

1 . A system, comprising:

one or more memory devices; and

one or more controllers coupled with the one or more memory devices and configured to cause the system to:

read a page of memory cells using a first reference voltage that is based at least in part on a first offset value and using a second reference voltage that is based at least in part on a second offset value;

determine, based at least in part on reading the page using the first reference voltage, a first quantity of memory cells with threshold voltages above the first reference voltage;

determine, based at least in part on reading the page using the second reference voltage, a second quantity of memory cells with threshold voltages above the second reference voltage; and

select, based at least in part on the first quantity being less than a target quantity and the second quantity being greater than the target quantity, an offset value for a set of pages that that is between the first offset value and the second offset value.

2 . The system of claim 1 , wherein the first reference voltage and the second reference voltage are each associated with an upper threshold voltage distribution of multiple threshold voltage distributions supported by the memory cells of the page.

3 . The system of claim 1 , wherein the one or more controllers are further configured to cause the system to:

select the second offset value for the second reference voltage to be greater than the first offset value based at least in part on the first quantity being less than the target quantity.

4 . The system of claim 1 , wherein the one or more controllers are further configured to cause the system to:

select the first offset value for reading the page based at least in part on the first offset value being between two intermediate values in a predetermined set of offset values.

5 . The system of claim 1 , wherein the page is in a first plane and the set of pages includes a second page of memory cells in a second plane, and the one or more controllers are further configured to cause the system to:

read, concurrently with reading the page using the first reference voltage, the second page in the second plane using the first reference voltage, wherein the offset value is selected for the set of pages based at least in part on reading the second page using the first reference voltage.

6 . The system of claim 5 , wherein the one or more controllers are further configured to cause the system to:

read, concurrently with reading the page using the second reference voltage, the second page in the second plane using the second reference voltage, wherein the offset value is selected for the set of pages based at least in part on reading the second page using the second reference voltage.

7 . The system of claim 1 , wherein the one or more controllers are further configured to cause the system to:

read, before reading the page using the first reference voltage, the page using a third reference voltage that is based at least in part on a third offset value; and

determine, based at least in part on reading the page using the third reference voltage, that a third quantity of memory cells with threshold voltages above the third reference voltage is less than the target quantity, wherein the page of memory cells is read using the first reference voltage based at least in part on the third quantity being less than the target quantity.

8 . The system of claim 7 , wherein the one or more controllers are further configured to cause the system to:

select the first offset value for the first reference voltage to be greater than the third offset value based at least in part on the third quantity being less than the target quantity.

9 . The system of claim 1 , wherein the one or more controllers are further configured to cause the system to:

read, after reading the page using the second reference voltage, the page using a third reference voltage that is based at least in part on a third offset value; and

determine, based at least in part on reading the page using the third reference voltage, that a third quantity of memory cells with threshold voltages above the third reference voltage is less than the target quantity, wherein the offset value is selected based at least in part on the third offset value and the third quantity being greater than the target quantity.

10 . The system of claim 9 , wherein the one or more controllers are further configured to cause the system to:

select the third offset value for the third reference voltage to be less than the second offset value based at least in part on the second quantity being greater than the target quantity.

11 . The system of claim 1 , wherein reading the page using the first reference voltage and the second reference voltage is part of a threshold voltage drift detection procedure for a memory system, and the one or more controllers are further configured to cause the system to:

perform the threshold voltage drift detection procedure during an initialization stage of the memory system.

12 . The system of claim 1 , wherein:

reading the page using the first reference voltage comprises comparing threshold voltages of the memory cells with the first reference voltage, and wherein:

reading the page using the second reference voltage comprises comparing threshold voltages of the memory cells with the second reference voltage.

13 . A method, comprising:

reading a page of memory cells using a first reference voltage that is based at least in part on a first offset value and using a second reference voltage that is based at least in part on a second offset value;

determining, based at least in part on reading the page using the first reference voltage, a first quantity of memory cells with threshold voltages above the first reference voltage;

determining, based at least in part on reading the page using the second reference voltage, a second quantity of memory cells with threshold voltages above the second reference voltage; and

selecting, based at least in part on the first quantity being less than a target quantity and the second quantity being greater than the target quantity, an offset value for a set of pages that that is between the first offset value and the second offset value.

14 . The method of claim 13 , wherein the first reference voltage and the second reference voltage are each associated with an upper threshold voltage distribution of multiple threshold voltage distributions supported by the memory cells of the page.

15 . The method of claim 13 , further comprising:

selecting the second offset value for the second reference voltage to be greater than the first offset value based at least in part on the first quantity being less than the target quantity.

16 . The method of claim 13 , further comprising:

selecting the first offset value for reading the page based at least in part on the first offset value being between two intermediate values in a predetermined set of offset values.

17 . The method of claim 13 , wherein the page is in a first plane and the set of pages includes a second page of memory cells in a second plane, the method further comprising:

reading, concurrently with reading the page using the first reference voltage, the second page in the second plane using the first reference voltage, wherein the offset value is selected for the set of pages based at least in part on reading the second page using the first reference voltage.

18 . The method of claim 17 , further comprising:

reading, concurrently with reading the page using the second reference voltage, the second page in the second plane using the second reference voltage, wherein the offset value is selected for the set of pages based at least in part on reading the second page using the second reference voltage.

19 . The method of claim 13 , further comprising:

reading, before reading the page using the first reference voltage, the page using a third reference voltage that is based at least in part on a third offset value; and

determining, based at least in part on reading the page using the third reference voltage, that a third quantity of memory cells with threshold voltages above the third reference voltage is less than the target quantity, wherein the page of memory cells is read using the first reference voltage based at least in part on the third quantity being less than the target quantity.

20 . A non-transitory computer-readable medium storing code, the code comprising instructions executable by a processor to:

read a page of memory cells using a first reference voltage that is based at least in part on a first offset value and using a second reference voltage that is based at least in part on a second offset value;

determine, based at least in part on reading the page using the first reference voltage, a first quantity of memory cells with threshold voltages above the first reference voltage;

determine, based at least in part on reading the page using the second reference voltage, a second quantity of memory cells with threshold voltages above the second reference voltage; and

select, based at least in part on the first quantity being less than a target quantity and the second quantity being greater than the target quantity, an offset value for a set of pages that that is between the first offset value and the second offset value.