IP Library › Granted Patent US 12,482,388
Granted Patent B2
US 12,482,388 · App. 17/771,913 · Granted Nov 25, 2025

Gate driving circuit and related display panel

Inventor: Zhixiang Chen (Guangdong, CN)
Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
G09G3/20G09G2300/0408G09G2310/0267G09G2330/02
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,482,388
App. No.
17/771,913
Granted
Nov 25, 2025
Kind
B2
Abstract

Embodiments of the present disclosure are directed to a gate driving circuit and a display panel. The gate driving circuit includes a plurality of cascaded gate driving units. Each of the gate driving unit includes a pull-up control module, a pull-up module electrically connected to the pull-up control module through a first node and electrically connected to a scan line, a pull-down module electrically connected to the scan line, and a first pull-down maintaining module. The first pull-down maintaining module includes a first auxiliary module and a first pull-down maintaining transistor having a drain connected to the first node. The first auxiliary module, electrically connected to a gate of the first pull-down maintaining transistor, and configured to control an on/off state of the first pull-down maintaining transistor.

Claims (73)

1 . A gate driving circuit, comprising a plurality of cascaded gate driving units, each of the gate driving unit comprising:

a pull-up control module;

a pull-up module, electrically connected to the pull-up control module through a first node and electrically connected to a scan line;

a pull-down module, electrically connected to the scan line;

a first pull-down maintaining module, comprising:

a first pull-down maintaining transistor, having a drain connected to the first node; and

a first auxiliary module, electrically connected to a gate of the first pull-down maintaining transistor, configured to control an on/off state of the first pull-down maintaining transistor; and

a second pull-down maintaining module, comprising:

a second pull-down maintaining transistor, having a gate electrically connected to a second pull-down maintaining line to receive a second pull-down maintaining signal, a source electrically connected to the first pull-down maintaining transistor and a first power line to receive a first power signal, and a drain electrically connected to the first node;

wherein the first auxiliary module comprises:

a first auxiliary transistor, having a drain electrically connected to the gate of the first pull-down maintaining transistor, a source electrically connected to an auxiliary power line to receive an auxiliary signal, and a gate connected to a first control signal line to receive a first control signal;

wherein the first control signal is configured to turn on the first auxiliary transistor to allow the auxiliary signal to turn off the first pull-down maintaining transistor in on-state, wherein the first control signal is identical to the second pull-down maintaining signal, and the second pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels;

wherein the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned on, and the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned off;

wherein the first pull-down maintaining module further comprises:

a first converting module, electrically connected to the first node and the gate of the first pull-down maintaining transistor, configured to turn on the first pull-down maintaining transistor.

2 . The gate driving circuit of claim 1 , wherein the second pull-down maintaining signal is configured to turn on the second pull-down maintaining transistor to allow the first power signal to control a voltage level of the first node.

3 . The gate driving circuit of claim 2 , wherein the auxiliary power line and the first power line are a same line.

4 . The gate driving circuit of claim 2 , wherein the auxiliary power line and the first power line are different lines such that the auxiliary signal is different from the first power signal.

5 . The gate driving circuit of claim 2 , wherein the second pull-down maintaining module further comprises:

a second auxiliary module, electrically connected to a gate of the second pull-down maintaining transistor, configured to control an on/off state of the second pull-down maintaining transistor.

6 . The gate driving circuit of claim 5 , wherein the second auxiliary module further comprises:

a second auxiliary transistor, having a drain electrically connected to the gate of the second pull-down maintaining transistor, a source electrically connected to the auxiliary power line to receive the auxiliary signal, and a gate connected to a second control signal line to receive a second control signal;

wherein a gate of the first pull-down maintaining transistor is electrically connected to a first pull-down maintaining line to receive a first pull-down maintaining signal;

wherein the first pull-down maintaining signal is configured to turn on the first pull-down maintaining transistor to allow the first power signal to control the voltage level of the first node, the first pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels, and the high voltage levels of the first pull-down maintaining signal are corresponding to the low voltage levels of the second pull-down maintaining signal; and

wherein the second control signal is identical to the first pull-down maintaining signal.

7 . The gate driving circuit of claim 1 , wherein the first converting module comprises a first inverter transistor, a second inverter transistor, a third inverter transistor, and a fourth inverter transistor;

a source of the first inverter transistor, a gate of the first inverter transistor, and a source of the third inverter transistor are configured to receive a first pull-down maintaining signal, and a drain of the first inverter transistor is electrically connected to a gate of the third inverter transistor; and

a gate of the second inverter transistor and a gate of the fourth inverter transistor are electrically connected to the first node, a drain of the second inverter transistor and a drain of the fourth transistor are configured to receive the first power signal, a source of the second inverter transistor is electrically connected to the drain of the first inverter transistor, and a source of the fourth inverter transistor is electrically connected to a drain of the third inverter transistor;

wherein the first pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels, and the high voltage levels of the first pull-down maintaining signal are corresponding to the low voltage levels of the second pull-down maintaining signal.

8 . A gate driving circuit, comprising a plurality of cascaded gate driving units, each of the gate driving unit comprising:

a pull-up control module;

a pull-up module, electrically connected to the pull-up control module through a first node and electrically connected to a scan line;

a pull-down module, electrically connected to the scan line;

a first pull-down maintaining module, comprising:

a first pull-down maintaining transistor, having a drain connected to the first node; and

a first auxiliary module, electrically connected to a gate of the first pull-down maintaining transistor, configured to turn off the first pull-down maintaining transistor in on-state; and

a second pull-down maintaining module, comprising:

a second pull-down maintaining transistor, having a gate electrically connected to a second pull-down maintaining line to receive a second pull-down maintaining signal, a source electrically connected to the first pull-down maintaining transistor and a first power line to receive a first power signal, and a drain electrically connected to the first node; and

a second auxiliary module, electrically connected to the gate of the second pull-down maintaining transistor, configured to control an on/off state of the second pull-down maintaining transistor;

wherein the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned on, and the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned off;

wherein the first pull-down maintaining module further comprises:

a first converting module, electrically connected to the first node and the gate of the first pull-down maintaining transistor, configured to turn on the first pull-down maintaining transistor.

9 . The gate driving circuit of claim 8 , wherein the first auxiliary module comprises:

a first auxiliary transistor, having a drain electrically connected to the gate of the first pull-down maintaining transistor, a source electrically connected to an auxiliary power line to receive an auxiliary signal, and a gate connected to a first control signal line to receive a first control signal;

wherein the first control signal is configured to turn on the first auxiliary transistor to allow the auxiliary signal to control the on/off state of the first pull-down maintaining transistor.

10 . The gate driving circuit of claim 9 , wherein the second pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels, the second pull-down maintaining signal is configured to turn on the second pull-down maintaining transistor to allow the first power signal to control a voltage level of the first node, and the first control signal is identical to the second pull-down maintaining signal.

11 . The gate driving circuit of claim 10 , wherein the auxiliary power line and the first power line are a same line.

12 . The gate driving circuit of claim 10 , wherein the auxiliary power line and the first power line are different lines such that the auxiliary signal is different from the first power signal.

13 . The gate driving circuit of claim 10 , wherein the second auxiliary module further comprises:

a second auxiliary transistor, having a drain electrically connected to the gate of the second pull-down maintaining transistor, a source electrically connected to the auxiliary power line to receive the auxiliary signal, and a gate connected to a second control signal line to receive a second control signal;

wherein a gate of the first pull-down maintaining transistor is electrically connected to a first pull-down maintaining line to receive a first pull-down maintaining signal;

wherein the first pull-down maintaining signal is configured to turn on the first pull-down maintaining transistor to allow the first power signal to control the voltage level of the first node, the first pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels, and the high voltage levels of the first pull-down maintaining signal are corresponding to the low voltage levels of the second pull-down maintaining signal; and

wherein the second control signal is identical to the first pull-down maintaining signal.

14 . The gate driving circuit of claim 10 , wherein the first auxiliary module comprises:

a control signal line, electrically connected to the gate of the first pull-down maintaining transistor and carrying a control signal;

wherein the control signal comprises a plurality of effective voltage levels arranged at intervals, and each of the effective voltage levels is configured to control the on/off state of the first pull-down maintaining transistor.

15 . A display panel, comprising a gate driving circuit comprising a plurality of cascaded gate driving units, each of the gate driving unit comprising:

a pull-up control module;

a pull-up module, electrically connected to the pull-up control module through a first node and electrically connected to a scan line;

a pull-down module, electrically connected to the scan line;

a first pull-down maintaining module, comprising:

a first pull-down maintaining transistor, having a drain connected to the first node; and

a first auxiliary module, electrically connected to a gate of the first pull-down maintaining transistor, configured to turn off the first pull-down maintaining transistor in on-state; and

a second pull-down maintaining module, comprising:

a second pull-down maintaining transistor, having a gate electrically connected to a second pull-down maintaining line to receive a second pull-down maintaining signal, a source electrically connected to the first pull-down maintaining transistor and a first power line to receive a first power signal, and a drain electrically connected to the first node;

wherein the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned on, and the first pull-down maintaining transistor and the second pull-down maintaining transistor are alternatively turned off;

wherein the first pull-down maintaining module further comprises:

a first converting module, electrically connected to the first node and the gate of the first pull-down maintaining transistor, configured to turn on the first pull-down maintaining transistor;

wherein the first auxiliary module comprises:

a first auxiliary transistor, having a drain electrically connected to the gate of the first pull-down maintaining transistor, a source electrically connected to an auxiliary power line to receive an auxiliary signal, and a gate connected to a first control signal line to receive a first control signal;

wherein the first control signal is configured to turn on the first auxiliary transistor to allow the auxiliary signal to control the on/off state of the first pull-down maintaining transistor; and

wherein the second pull-down maintaining signal comprises alternatively-arranged high voltage levels and low voltage levels, the second pull-down maintaining signal is configured to turn on the second pull-down maintaining transistor to allow the first power signal to control a voltage level of the first node, and the first control signal is identical to the second pull-down maintaining signal.

16 . The display panel of claim 15 , wherein the auxiliary power line and the first power line are a same line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2022
From: CHEN, ZHIXIANG
To: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 059818/0803 →
Priority Claims (1)
CN 202210297387.6 · Mar 24, 2022 · national
Continuity (1)
Related Publication 20240169873A1 · May 23, 2024
References Cited (18)
US 20160164514A1 · Xiao · 2016 [cited by examiner]
US 20160275895A1 · Dai · 2016 [cited by examiner]
US 20180226035A1 · Wang · 2018 [cited by applicant]
US 20180336835A1 · Liu · 2018 [cited by examiner]
US 20190197973A1 · Chen · 2019 [cited by examiner]
US 20200020266A1 · Feng · 2020 [cited by examiner]
CN 106157914 · 2016 [cited by applicant]
CN 106409213 · 2017 [cited by applicant]
CN 107705768 · 2018 [cited by applicant]
CN 109935191 · 2019 [cited by applicant]
CN 112037728 · 2020 [cited by applicant]
CN 113178175 · 2021 [cited by applicant]
CN 113593460 · 2021 [cited by applicant]
CN 113658539 · 2021 [cited by applicant]
Zeng, Mian, Translation of CN 106328084, Jan. 11, 2017 (Year: 2017). [cited by examiner]
International Search Report and the Written Opinion Dated Nov. 29, 2022 From the International Searching Authority Re. Application No. PCT/CN2022/087288 and Its Translation Into English. (20 Pages). [cited by applicant]
Notification of Office Action and Search Report Dated Nov. 1, 2024 From The State Intellectual Property Office of the People's Republic of China Re. Application No. 202210297387.6 and Its Translation Into English. (17 P… [cited by applicant]
Notification of Office Action and Search Report Dated Mar. 30, 2025 From The State Intellectual Property Office of the People's Republic of China Re. Application No. 202210297387.6 and Its Translation Into English. (17 … [cited by applicant]