IP Library › Granted Patent US 12,482,951
Granted Patent B2
US 12,482,951 · App. 18/160,064 · Granted Nov 25, 2025

Dielectric waveguide, terahertz circuit and terahertz integrated circuit

Inventors: Masayuki Fujita (Osaka, JP); Daniel Jonathan Headland (Osaka, JP); Withawat Withayachumnankul (Osaka, JP); Tadao Nagatsuma (Osaka, JP)
Assignee: Osaka University
H01Q13/28
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Quick Facts
Patent No.
US 12,482,951
App. No.
18/160,064
Granted
Nov 25, 2025
Kind
B2
Abstract

An UC dielectric waveguide of the embodiments includes: a dielectric substance wiring propagating a terahertz wave; and a medium disposed around the dielectric substance wiring and having a large refractive index difference with respect to the dielectric substance wiring. A THz circuit of the embodiments includes a dielectric substance THz circuit connected between a first and second UC dielectric waveguides. The dielectric substance THZ circuit includes a circuit including a linear-shaped UC dielectric waveguide, a bent-shaped UC dielectric waveguide, and a Y-coupled branch circuit. There are included a first holding unit holding the first UC dielectric waveguide and a second holding unit holding the second UC dielectric waveguide. The THZ circuit of the embodiments may include a 2×2 evanescent coupler. Provided is a THz circuit having mechanical strength obtained by applying the UC dielectric waveguide having high confinement and transmission efficiencies of THz waves with a simple structure.

Claims (54)

1 . A dielectric waveguide comprising:

a dielectric substance wiring configured to propagate a terahertz wave;

a medium disposed around the dielectric substance wiring, the medium having a large refractive index difference with respect to the dielectric substance wiring;

a holding unit configured to hold the dielectric substance wiring; and

a low-refractive index cladding layer disposed between the holding unit and the dielectric substance wiring, wherein

the terahertz wave is confined within the dielectric substance wiring.

2 . The dielectric waveguide according to claim 1 , wherein

the medium comprises one selected from the group consisting of air, nitrogen, xenon, and helium.

3 . The dielectric waveguide according to claim 1 , wherein

the dielectric substance wiring comprises

a first unclad dielectric waveguide disposed at one end portion, and

a second unclad dielectric waveguide disposed at the other end portion.

4 . The dielectric waveguide according to claim 3 , further comprising

a dielectric substance terahertz circuit disposed between the first unclad dielectric waveguide and the second unclad dielectric waveguide.

5 . The dielectric waveguide according to claim 4 , wherein

the dielectric substance terahertz circuit comprises a circuit composed of a dielectric.

6 . The dielectric waveguide according to claim 4 , wherein

the dielectric substance terahertz circuit comprises a circuit including an unclad dielectric waveguide.

7 . The dielectric waveguide according to claim 4 , wherein

the dielectric substance terahertz circuit comprises a circuit obtained by combining a circuit including an unclad dielectric waveguide and a circuit including an effective-medium-cladded dielectric waveguide.

8 . The dielectric waveguide according to claim 4 , wherein

the dielectric substance terahertz circuit comprises a circuit obtained by combining a circuit including an unclad dielectric waveguide and a circuit including a photonic crystal waveguide.

9 . The dielectric waveguide according to claim 4 , wherein

the dielectric substance terahertz circuit comprises a circuit obtained by combining a circuit including an unclad dielectric waveguide, a circuit including an effective-medium-cladded dielectric waveguide, and a circuit including a photonic crystal waveguide.

10 . The dielectric waveguide according to claim 1 , further comprising:

a package substrate; and

a package disposed on the package substrate, the package configured to seal the dielectric substance wiring, wherein

the dielectric substance wiring is disposed above the package substrate via the medium.

11 . The dielectric waveguide according to claim 1 , wherein

the dielectric substance wiring comprises any one of materials selected from the group consisting of silicon (Si), GaAs, InP, GaN, GalnAsP/InP, GalnAs/GaAs, GaAlAs/GaAs, GalInNAs/GaAs, GaAlInAs/InP, AlGaInP/GaAs, GaInN/GaN, plastic, glass, epoxy resin, and poly-tetrafluoroethylene.

12 . A terahertz circuit comprising:

a first unclad dielectric waveguide;

a second unclad dielectric waveguide;

a dielectric substance terahertz circuit connected between the first unclad dielectric waveguide and the second unclad dielectric waveguide;

a first holding unit configured to hold the first unclad dielectric waveguide;

a second holding unit configured to hold the second unclad dielectric waveguide;

a first low-refractive index cladding layer disposed between the first holding unit and the first unclad dielectric waveguide; and

a second low-refractive index cladding layer disposed between the second holding unit and the second unclad dielectric waveguide.

13 . The terahertz circuit according to claim 12 , wherein

the dielectric substance terahertz circuit comprises a circuit including a linear-shaped unclad dielectric waveguide.

14 . The terahertz circuit according to claim 12 , wherein

the dielectric substance terahertz circuit comprising a circuit including a bent-shaped unclad dielectric waveguide.

15 . The terahertz circuit according to claim 12 , wherein

the dielectric substance terahertz circuit comprises a circuit including a Y-coupled branch circuit.

16 . The terahertz circuit according to claim 15 , wherein

the Y-coupled branch circuit comprises a circuit including unclad dielectric waveguides having a symmetrically arranged circular bend structure.

17 . The terahertz circuit according to claim 12 , wherein

the dielectric substance terahertz circuit comprises an unclad dielectric waveguide having a first wiring width at a first bent portion, and a second wiring width wider than the first wiring width at a second portion different from the first bent portion.

18 . A terahertz integrated circuit comprising:

a first unclad dielectric waveguide;

a second unclad dielectric waveguide capable of evanescent coupling to the first unclad dielectric waveguide; and

a holding unit configured to hold the first unclad dielectric waveguide and the second unclad dielectric waveguide, wherein

the first unclad dielectric waveguide has a first wiring width at a first bent portion, and a second wiring width wider than the first wiring width at a portion different from the first bent portion, wherein

the second unclad dielectric waveguide comprises periodic lattice points in which a size and a period of holes are gradually increased.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2023
From: FUJITA, MASAYUKI; HEADLAND, DANIEL JONATHAN; WITHAYACHUMNANKUL, WITHAWAT; NAGATSUMA, TADAO
To: OSAKA UNIVERSITY
Reel/Frame 062501/0256 →
Priority Claims (1)
JP 2020-128220 · Jul 29, 2020 · national
Continuity (2)
Continuation PCTJP2021027975 · Jul 28, 2021
Related Publication 20230178898A1 · Jun 8, 2023
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