Stability techniques in power amplifiers under high voltage standing wave ratio conditions
In some embodiments, stability in power amplifiers can be achieved under high voltage standing wave ratio conditions, with an amplifier circuit that includes an amplifier having a selected stage among a plurality of stages, and either or both of a first stabilizing circuit implemented on an input side of the selected stage to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition, and a second stabilizing circuit implemented on an output side of the selected stage to provide stability in operation of the amplifier under a high out-of-band voltage standing wave ratio condition.
1 . An amplifier circuit comprising:
an amplifier having a selected stage among a plurality of stages each having an amplifier transistor, the selected stage being an output stage configured such that an output of the amplifier transistor of a preceding stage is coupled to an input of the amplifier transistor of the output stage implemented as a bipolar-junction transistor having a base as the input and a collector as an output; and
a stabilizing circuit implemented on the input side of the selected stage to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition, the stabilizing circuit including a harmonic trap coupled to the base of the amplifier transistor of the output stage, a spur-reduction network implemented between the amplifier transistors of the output and preceding stages, and a resistance implemented to be electrically parallel with a choke inductance that couples the collector of the amplifier transistor of the preceding stage to a supply voltage node.
2 . The amplifier circuit of claim 1 wherein the harmonic trap includes a half-harmonic notch circuit having a resistance, an inductance, and a capacitance arranged in electrical series between the base of the amplifier transistor of the output stage and ground.
3 . The amplifier circuit of claim 1 wherein the harmonic trap includes a resistance and an inductance arranged in electrical series between the base of the amplifier transistor of the output stage and ground, the resistance and the inductance selected to provide a low-frequency short functionality.
4 . The amplifier circuit of claim 1 wherein the spur-reduction network includes an inductance and a capacitance arranged in electrical series between the collector of the amplifier transistor of the preceding stage and an inter-stage DC-block capacitance, the inductance and the capacitance selected to provide a band-pass functionality.
5 . The amplifier circuit of claim 1 wherein the spur-reduction network includes a resistance and a capacitance arranged to be electrically parallel between the collector of the amplifier transistor of the preceding stage and an inter-stage DC-block capacitance, the inductance and the capacitance selected to provide a high-pass functionality.
6 . The amplifier circuit of claim 1 wherein the resistance is selected to reduce an inter-stage loop gain for one or more harmonics and one or more low-frequency spurs.
7 . The amplifier circuit of claim 1 further comprising another stabilizing circuit that includes a limiting circuit implemented between the collector of the amplifier transistor of the output stage and ground, the limiting circuit configured to reduce generation of one or more oscillatory spurs under the high out-of-band voltage standing wave ratio condition.
8 . The amplifier circuit of claim 7 wherein the limiting circuit includes a resistance implemented between the collector of the amplifier transistor of the output stage and ground, the resistance selected to limit voltage standing wave ratio across substantially the entire frequency range associated with operation of the amplifier.
9 . An amplifier circuit comprising:
an amplifier having a selected stage among a plurality of stages each having an amplifier transistor, the selected stage being an output stage configured such that an output of the amplifier transistor of a preceding stage is coupled to an input of the amplifier transistor of the output stage implemented as a bipolar-junction transistor having a base as the input and a collector as an output; and
a stabilizing circuit implemented on the output side of the selected stage to provide stability in operation of the amplifier under a high out-of-band voltage standing wave ratio condition, the stabilizing circuit including a limiting circuit implemented between the collector of the amplifier transistor of the output stage and ground, the limiting circuit configured to reduce generation of one or more oscillatory spurs under the high out-of-band voltage standing wave ratio condition, the limiting circuit including a resistance, an inductance, and a capacitance arranged in electrical series between the collector of the amplifier transistor of the output stage and ground, the resistance, the inductance, and the capacitance selected to provide a notch functionality to limit voltage standing wave ratio at an out-of-band spur frequency, or a resistance and an inductance arranged in electrical series between the collector of the amplifier transistor of the output stage and ground, the resistance and the inductance selected to provide a low-pass functionality to limit voltage standing wave ratio for frequencies below a transmit in-band frequency.
10 . A semiconductor die comprising:
a semiconductor substrate; and
an amplifier circuit implemented on the semiconductor substrate, the amplifier circuit including an amplifier having a selected stage among a plurality of stages each having an amplifier transistor, the selected stage being an output stage configured such that an output of the amplifier transistor of a preceding stage is coupled to an input of the amplifier transistor of the output stage implemented as a bipolar-junction transistor having a base as the input and a collector as an output, the amplifier circuit further including a stabilizing circuit implemented on the input side of the selected stage to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition, the stabilizing circuit including a harmonic trap coupled to the base of the amplifier transistor of the output stage, a spur-reduction network implemented between the amplifier transistors of the output and preceding stages, and a resistance implemented to be electrically parallel with a choke inductance that couples the collector of the amplifier transistor of the preceding stage to a supply voltage node.
11 . The semiconductor die of claim 10 wherein the amplifier is a power amplifier.
12 . A packaged module comprising:
a packaging substrate configured to receive a plurality of components; and
an amplifier circuit implemented on the packaging substrate, the amplifier circuit including an amplifier having a selected stage among a plurality of stages each having an amplifier transistor, the selected stage being an output stage configured such that an output of the amplifier transistor of a preceding stage is coupled to an input of the amplifier transistor of the output stage implemented as a bipolar-junction transistor having a base as the input and a collector as an output, the amplifier circuit further including a stabilizing circuit implemented on the input side of the selected stage to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition, the stabilizing circuit including a harmonic trap coupled to the base of the amplifier transistor of the output stage, a spur-reduction network implemented between the amplifier transistors of the output and preceding stages, and a resistance implemented to be electrically parallel with a choke inductance that couples the collector of the amplifier transistor of the preceding stage to a supply voltage node.
13 . The packaged module of claim 12 wherein the amplifier is a power amplifier.
14 . The packaged module of claim 13 further comprising an impedance matching network coupled to the output of the output stage.