Solar-blind AlGaN ultraviolet photodetector and preparation method thereof
The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al y Ga 1-y N layer, and an undoped N-polar plane Al x Ga 1-x N layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.
1 . A solar-blind AlGaN ultraviolet (UV) photodetector, characterized in that: it comprises an UV photodetector epitaxial wafer, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where z=1.33-1.5; wherein:
the UV photodetector epitaxial wafer comprises the following layers grown sequentially on a silicon substrate: an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al y Ga 1-y N layer, and an undoped N-polar plane Al x Ga 1-x N layer, where x=0.5-0.8, and y=0.75-0.95; and
the insulating layer is arranged on one side of the undoped N-polar plane Al x Ga 1-x N layer; the ohmic contact electrode is arranged on the insulating layer, and also oppositely on the upper surface of the undoped N-polar plane Al x Ga 1-x N layer; and the Schottky contact electrode is arranged on the ohmic contact electrode, on the side surface of the insulating layer and the ohmic contact electrode, and on the undoped N-polar plane Al x Ga 1-x N layer.
2 . The solar-blind AlGaN UV photodetector according to claim 1 , characterized in that: the Schottky contact electrode is made of a two-dimensional MXene material, and the insulating layer is made of Al 2 O 3 .
3 . The solar-blind AlGaN UV photodetector according to claim 1 , characterized in that: the thickness of the insulating layer is 200-300 nm, and the thickness of the ohmic contact electrode is 100-150 nm.
4 . The solar-blind AlGaN UV photodetector according to claim 1 , characterized in that: the insulating layer is higher than the upper surface of the undoped N-polar plane Al x Ga 1-x N layer.
5 . The solar-blind AlGaN UV photodetector according to claim 1 , characterized in that: the close-packed (111) surface of the silicon substrate is taken as the epitaxial surface; and
(0001) is taken as the epitaxial direction for the undoped N-polar plane AlN buffer layer, the carbon-doped N-polar plane AlN layer, the carbon-doped N-polar plane composition-graded Al y Ga 1-y N layer, and the undoped N-polar plane Al x Ga 1-x N layer.
6 . A method for preparing the solar-blind AlGaN UV photodetector, characterized in that the method comprises the following steps:
growing the following layers sequentially on the silicon substrate: an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al y Ga 1-y N layer, and an undoped N-polar plane Al x Ga 1-x N layer, where x=0.5-0.8, and y=0.75-0.95, thus obtaining an UV photodetector epitaxial wafer, and then processing the wafer;
performing photolithography on the processed UV photodetector epitaxial wafer to obtain an isolation pattern, then etching the UV photodetector epitaxial wafer to obtain a groove along the isolation pattern, and then placing the UV photodetector epitaxial wafer in a plasma-assisted chemical vapor deposition device to deposit a SiN z passivation layer in the groove, where z=1.33-1.5;
etching the exposed SiN z on the UV photodetector epitaxial wafer away by a wet etching method, and then processing the wafer;
performing photolithography on one side of the undoped N-polar plane Al x Ga 1-x N layer through mask alignment to obtain an insulating layer pattern thereon, then placing the UV photodetector epitaxial wafer prepared in an electron beam evaporation device to evaporation-deposit an isolating layer thereon, and then processing the UV photodetector epitaxial wafer with the prepared insulating layer;
performing photolithography on the insulating layer and oppositely on the undoped N-polar plane Al x Ga 1-x N layer through mask alignment, respectively, thus obtaining the pattern of the ohmic contact electrode; then placing the UV photodetector epitaxial wafer in the electron beam evaporation device to evaporation-deposit an ohmic contact electrode metal, thus obtaining the ohmic contact electrode; and then processing the UV photodetector epitaxial wafer; and
performing photolithography through mask alignment on the ohmic contact electrode metal on the insulating layer, and on the side surface of the insulating layer and the ohmic contact electrode, as well as on the undoped N polar plane Al x Ga 1-x N layer, thus obtaining the pattern of the Schottky contact electrode; and then covering the pattern of the Schottky contact electrode sufficiently uniformly with a Schottky contact electrode material, heating, and standing to shape to obtain the solar-blind AlGaN UV photodetector.
7 . The preparation method according to claim 6 , characterized in that: the Schottky contact electrode is made of a two-dimensional MXene material, and the insulating layer is made of Al 2 O 3 .
8 . The preparation method according to claim 6 , characterized in that: photolithography is performed on the processed UV photodetector epitaxial wafer, the thickness of a photoresist being 0.2-0.7 μm, the exposure time being 1-4 s, the development time being 45-95 s.
9 . The preparation method according to claim 6 , characterized in that the depth of the groove is 1-2.5 μm.
10 . The preparation method according to claim 6 , characterized in that: the close-packed Si(111) surface of the silicon substrate is taken as the epitaxial surface; and
(0001) is taken as the epitaxial direction for the undoped N-polar plane AlN buffer layer, the carbon-doped N-polar plane AlN layer, the carbon-doped N-polar plane composition-graded Al y Ga 1-y N layer, and the undoped N-polar plane Al x Ga 1-x N layer.