IP Library Granted Patent US 12,489,351
Granted Patent B2
US 12,489,351 · App. 18/185,098 · Granted Dec 2, 2025

Power current signal generation using sense transistors

Inventors: Nan Xing (Allen, TX); Yinglai Xia (Plano, TX); Yalong Li (Allen, TX)
Assignee: Infineon Technologies Canada Inc.
H02M1/0009
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Quick Facts
Patent No.
US 12,489,351
App. No.
18/185,098
Granted
Dec 2, 2025
Kind
B2
Abstract

A power transistor current sense circuit. The control nodes of each of a power transistor and sense transistors are connected. The input nodes of the power transistor and each of the sense transistors are also connected. A voltage divider is connected between a reference voltage source and the output node of a second sense transistor. A negative feedback circuit is connected between the output of the voltage divider and the output node of the first sense transistor. The negative feedback circuit forces a voltage at the output node of the first sense transistor to be approximately equal to the divided voltage. A power transistor current determination component measures a sense current that passes through the first sense transistor, and from that detects the current passing through the power transistor.

Claims (32)

1 . A circuit comprising:

a power transistor having a power transistor control node that controls whether current flows from a power transistor input node to a power transistor output node;

a first sense transistor having a first sense transistor control node that controls whether current flows from a first sense transistor input node to a first sense transistor output node, the first sense transistor control node connected to the power transistor control node, and the first sense transistor input node connected to the power transistor input node;

a second sense transistor having a second sense transistor control node that controls whether current flows from a second sense transistor input node to a second sense transistor output node, the second sense transistor control node connected to the power transistor control node and to the first sense transistor control node, and the second sense transistor input node connected to the power transistor input node and to the first sense transistor input node;

a voltage divider connected between the second sense transistor output node and a reference voltage, the voltage divider being configured to provide at a divider output node a divided voltage that is between a source voltage when present on the second sense transistor output node and the reference voltage, the reference voltage also being applied to the output node of the power transistor; and

a negative feedback circuit connected between the divider output node and the first sense transistor output node, the negative feedback circuit being configured to receive the divided voltage from the voltage divider, the negative feedback circuit being configured to force a first sense transistor output node voltage to be approximately equal to the divided voltage when the divided voltage is present on the divider output node.

2 . The circuit in accordance with claim 1 , further comprising a power transistor current determination component configured to:

measure a first sense transistor current that passes through the first sense transistor from the first sense transistor input node to the first sense transistor output node when 1) a control voltage is applied to the power transistor control node, the first sense transistor control node, and the second sense transistor control node, and 2) an input voltage is applied to the power transistor input node, the first sense transistor input node, and the second sense transistor input node; and

using the measured first sense transistor current to generate a signal representing a power current passing through the power transistor from the power transistor input node to the power transistor output node.

3 . The circuit according to claim 2 , wherein the power transistor, the first sense transistor, and the second sense transistor have a control voltage that is within 0.2 volts of each other.

4 . The circuit according to claim 2 , wherein the power transistor, the first sense transistor, and the second sense transistor have a control voltage that is within 0.1 volts of each other.

5 . The circuit according to claim 2 , wherein the power transistor, the first sense transistor, and the second sense transistor have a control voltage that is within 0.05 volts of each other.

6 . The circuit according to claim 2 , wherein a first size ratio of a current flow width of the power transistor over a current flow width of the first sense transistor is 500 or more, a second size ratio of the current flow width of the power transistor over a current flow width of the second sense transistor is also 500 or more.

7 . The circuit according to claim 6 , wherein the power transistor current determination component is further configured to generate a signal representing the power current passing through the power transistor where the power current is a function of the first size ratio.

8 . The circuit according to claim 1 , wherein each of the power transistor, first sense transistor, and second sense transistors are manufactured on a same semiconductor substrate using the same semiconductor manufacturing techniques.

9 . The circuit according to claim 8 , wherein the power transistor, the first sense transistor, and the second sense transistor are each gallium nitride field-effect transistors.

10 . The circuit according to claim 1 , wherein the negative feedback circuit comprises an operational amplifier and a negative feedback transistor,

the operational amplifier having an operational amplifier negative input node, an operational amplifier positive input node, and an operational amplifier output node, the operational amplifier negative input node being connected to the divider output node, the operational amplifier positive input node being connected to the first sense transistor output node,

the negative feedback transistor having a negative feedback control node that controls whether current flows from a negative feedback transistor input node to a negative feedback transistor output node, the negative feedback control node connected to the operational amplifier output node, and the negative feedback transistor input node connected to the first sense transistor output node, and

the operational amplifier negative input node being configured to receive the divided voltage from the voltage divider.

11 . The circuit according to claim 10 , wherein the operational amplifier is powered via a control voltage supplied to the power transistor control node, the first sense transistor control node, and the second sense transistor control node.

12 . The circuit according to claim 1 , wherein the reference voltage from the reference voltage source is ground.

13 . The circuit according to claim 1 , wherein the first sense transistor output node voltage is within 00.1 volts of the divided voltage when the divided voltage is present on the divider output node.

14 . The circuit according to claim 1 , wherein the voltage divider comprises a plurality of resistors coupled in series between the second sense transistor output node and the reference voltage source, the divider output node being an intermediate node in the series.

15 . The circuit in accordance with claim 14 , wherein the voltage divider further comprises one or more capacitors coupled in series with the plurality of resistors between the second sense transistor output node and a reference voltage source.

16 . A method of generating a signal representing a power current passing through a power transistor from a power transistor input node to a power transistor output node, the method comprising:

applying an input voltage to the power transistor input node of the power transistor, a first sense transistor input node of a first sense transistor, and a second sense transistor input node of a second sense transistor, wherein the power transistor input node, the first sense transistor input node, and the second sense transistor input node are connected to each other;

applying a control voltage to a power transistor control node of the power transistor, a first sense transistor control node of the first sense transistor, and a second sense transistor control node of the second sense transistor, wherein the power transistor control node, the first sense transistor control node, and the second sense transistor control node are connected to each other; and

forcing a first sense transistor output node voltage at a first sense transistor output node of the first sense transistor to be approximately equal to a divided voltage of a reference voltage and a voltage that is present on a second sense transistor output node of the second sense transistor, the reference voltage also being applied to the output node of the power transistor.

17 . The method according to claim 16 , the method further comprising:

measuring a first sense transistor current that passes through the first sense transistor from the first sense transistor input node to the first sense transistor output node when 1) the control voltage is applied to the power transistor control node, the first sense transistor control node, and the second sense transistor control node, and 2) the input voltage is applied to the power transistor input node, the first sense transistor input node, and the second sense transistor input node, and

using the measured first sense transistor current to generate a signal representing the power current passing through the power transistor from the power transistor input node to the power transistor output node.

Assignments (2)
COURT ORDER Recorded Aug 23, 2024
From: GAN SYSTEMS INC.
To: INFINEON TECHNOLOGIES CANADA INC.
Reel/Frame 068763/0324 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2023
From: XING, NAN; XIA, YINGLAI; LI, YALONG
To: GAN SYSTEMS INC.
Reel/Frame 064684/0286 →
Continuity (1)
Related Publication 20240313651A1 · Sep 19, 2024
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