Granted Patent B2

US 12,489,378 · App. 17/924,698 · Granted Dec 2, 2025

Inventors: Jianfeng Ping (Hangzhou, CN); Qi Zhang (Hangzhou, CN); Yibin Ying (Hangzhou, CN)

Assignee: ZHEJIANG UNIVERSITY

H02N1/04

Abstract

Claims (41)

1 . A preparation method for a greenhouse film-based triboelectric nanogenerator (TENG), comprising:

i) preparing a superhydrophobic modified film with a superhydrophobic property on an upper surface of the superhydrophobic modified film;

ii) preparing a lower electrode;

iii) preparing an upper electrode; and

iv) connecting the upper electrode and the lower electrode;

wherein the greenhouse film-based TENG comprises the superhydrophobic modified film, the lower electrode, and the upper electrode, wherein the lower electrode is arranged on a lower surface of the superhydrophobic modified film, the upper electrode is arranged on the upper surface of the superhydrophobic modified film, and the superhydrophobic modified film is modified by a superhydrophobic modification method for a greenhouse film;

wherein the superhydrophobic modification method comprises:

1) placing a polyethylene (PE) film in an inductively coupled plasma (ICP) etcher;

2) etching an upper surface of the PE film for a first predetermined time by the ICP etcher, wherein a nano-textured structure is formed on the upper surface of the PE film; and

3) depositing the upper surface of the PE film for a second predetermined time by the ICP etcher, wherein a fluorocarbon layer is deposited on the nano-textured structure to complete a modification and take out the PE film;

wherein step ii) comprises:

adding a 15% v/v dimethyl sulfoxide (DMSO) solution to a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) solution, and stirring vigorously at a room temperature for 6 h to obtain a conductive polymer solution;

cleaning the lower surface of the superhydrophobic modified film, and conducting an O 2 plasma treatment for 5 min;

spin-coating the conductive polymer solution on the lower surface of the superhydrophobic modified film after the O 2 plasma treatment through a square mold; and

drying at the room temperature to prepare the lower electrode on the lower surface of the superhydrophobic modified film.

2 . The preparation method according to claim 1 , wherein in step 2) of the superhydrophobic modification method, the upper surface of the PE film is etched at a set ICP power of 100 W and a radio frequency (RF) power of 50 W under the presence of O 2 and CHF 3 at an air pressure of 30 mTorr for 10 min.

3 . The preparation method according to claim 2 , wherein in step 2) of the superhydrophobic modification method, O 2 and CHF 3 have a flow ratio of 1:3.

4 . The preparation method according to claim 1 , wherein in step 3) of the superhydrophobic modification method, the upper surface of the PE film is deposited at a set ICP power of 100 W and an RF power of 50 W under the presence of C 4 F 8 at an air pressure of 30 mTorr for 30 s.

5 . The preparation method according to claim 4 , wherein in step 3) of the superhydrophobic modification method, a flow rate of the C 4 F 8 is set as 50 sccm.

6 . The preparation method according to claim 1 , wherein in the greenhouse film-based TENG, the greenhouse film-based TENG is for a raindrop energy collection, the greenhouse film-based TENG is constructed on the greenhouse film, and during rainfall, raindrops contact the upper electrode on the upper surface of the superhydrophobic modified film to generate a continuous electrical output through a process of contact electrification and electrostatic induction.

7 . A preparation method for a greenhouse film-based TENG, comprising:

i) preparing a superhydrophobic modified film with a superhydrophobic property on an upper surface of the superhydrophobic modified film;

ii) preparing a lower electrode;

iii) preparing an upper electrode; and

iv) connecting the upper electrode and the lower electrode;

wherein the greenhouse film-based TENG comprises the superhydrophobic modified film, the lower electrode, and the upper electrode, wherein the lower electrode is arranged on a lower surface of the superhydrophobic modified film, the upper electrode is arranged on the upper surface of the superhydrophobic modified film, and the superhydrophobic modified film is modified by a superhydrophobic modification method for a greenhouse film;

wherein the superhydrophobic modification method comprises:

1) placing a polyethylene (PE) film in an inductively coupled plasma (ICP) etcher;

2) etching an upper surface of the PE film for a first predetermined time by the ICP etcher, wherein a nano-textured structure is formed on the upper surface of the PE film; and

3) depositing the upper surface of the PE film for a second predetermined time by the ICP etcher, wherein a fluorocarbon layer is deposited on the nano-textured structure to complete a modification and take out the PE film;

wherein step iii) comprises: sticking a piece of thin conductive copper tape on the upper surface of the superhydrophobic modified film at a center line of the lower electrode to prepare the upper electrode on the upper surface of the superhydrophobic modified film.

8 . A preparation method for a greenhouse film-based TENG, comprising:

i) preparing a superhydrophobic modified film with a superhydrophobic property on an upper surface of the superhydrophobic modified film;

ii) preparing a lower electrode;

iii) preparing an upper electrode; and

iv) connecting the upper electrode and the lower electrode with two pieces of copper tape, respectively to lead out an output electrical signal,

wherein the greenhouse film-based TENG comprises the superhydrophobic modified film, the lower electrode, and the upper electrode, wherein the lower electrode is arranged on a lower surface of the superhydrophobic modified film, the upper electrode is arranged on the upper surface of the superhydrophobic modified film, and the superhydrophobic modified film is modified by a superhydrophobic modification method for a greenhouse film;

wherein the superhydrophobic modification method comprises:

1) placing a polyethylene (PE) film in an inductively coupled plasma (ICP) etcher;

2) etching an upper surface of the PE film for a first predetermined time by the ICP etcher, wherein a nano-textured structure is formed on the upper surface of the PE film; and

3) depositing the upper surface of the PE film for a second predetermined time by the ICP etcher, wherein a fluorocarbon layer is deposited on the nano-textured structure to complete a modification and take out the PE film.

Assignments (1)

Priority Claims (2)

Continuity (1)

References Cited (10)