Method of manufacturing a semiconductor device having insulation fin structures
A semiconductor device and method of manufacture which utilize isolation structures between semiconductor regions is provided. In embodiments different isolation structures are formed between different fins in different regions with different spacings. Some of the isolation structures are formed using flowable processes. The use of such isolation structures helps to prevent damage while also allowing for a reduction in spacing between different fins of the devices.
1 . A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of semiconductor fins protruding over a substrate;
forming an isolation layer covering a bottom portion of the plurality of semiconductor fins;
forming a blocking layer covering at least a portion of the isolation layer;
forming an insulation fin structure located at least partially over the blocking layer and between a first one of the plurality of semiconductor fins and a second one of the plurality of semiconductor fins, wherein the forming the insulation fin structure comprises:
forming a conformal nitride material as a bottom portion; and
forming an oxide material as a seamless top portion, wherein the seamless top portion covers a top surface of the conformal nitride material, wherein the forming the oxide material comprises forming tungsten oxide, wherein the method of manufacturing the semiconductor device forms a static random access memory device;
forming a first source/drain region in physical contact with the insulation fin structure, wherein the forming the first source/drain region forms part of the static random access memory device;
forming a second source/drain region in physical contact with the insulation fin structure, the second source/drain region being located on an opposite side of the insulation fin structure from the first source/drain region;
forming a second insulation fin structure, the forming the second insulation fin structure comprising:
forming the isolation layer;
forming a first dielectric material over the isolation layer, the first dielectric material being different from the isolation layer;
forming a second dielectric material embedded within the first dielectric material, the second dielectric material being different from the first dielectric material; and
forming a third dielectric material overlying the second dielectric material, the third dielectric material being different from the second dielectric material, wherein the second insulative fin structure is in physical contact with the second source/drain region; and
forming a logic device located on an opposite side of the second insulation fin structure from the static random access memory device, a portion of the logic device being in physical contact with the second insulation fin structure.
2 . The method of claim 1 , further comprising forming a shallow trench isolation, wherein after the forming the insulation fin structure, the shallow trench isolation is located on an opposite side of the first one of the plurality of semiconductor fins from the insulation fin structure, the shallow trench isolation comprising a first material free from overlying portions of the nitride material and free from overlying portions of the oxide material.
3 . The method of claim 2 , further comprising forming an isolation structure, wherein after the forming the insulation fin structure the isolation structure is located on an opposite side of a second one of the plurality of semiconductor fins from the insulation fin structure, the isolation structure comprising the first material, a second dielectric material, a third dielectric material embedded within the second dielectric material, and a fourth dielectric material.
4 . The method of claim 1 , wherein the oxide material comprises titanium oxide.
5 . The method of claim 1 , wherein the oxide material comprises zirconium oxide.
6 . The method of claim 1 , wherein the oxide material comprises tungsten oxide.
7 . The method of claim 1 , wherein the oxide material comprises aluminum oxide.
8 . A method of manufacturing a semiconductor device, the method comprising:
forming an insulative fin, the forming the insulative fin comprising:
forming a first dielectric material adjacent to a semiconductor substrate;
conformally forming a second dielectric material over the first dielectric material, the second dielectric material being different from the first dielectric material; and
forming a third dielectric material, wherein the third dielectric material is free from seams and voids;
forming a first source/drain region in physical contact with the insulative fin and the third dielectric material;
forming a second source/drain region in physical contact with the insulative fin, the second source/drain region being located on an opposite side of the insulative fin from the first source/drain region;
forming a second insulative fin, the forming the second insulative fin comprising:
forming the first dielectric material;
forming a fourth dielectric material over the first dielectric material, the fourth dielectric material being different from the first dielectric material;
forming a fifth dielectric material embedded within the fourth dielectric material, the fifth dielectric material being different from the fourth dielectric material; and
forming a sixth dielectric material overlying the fifth dielectric material, the sixth dielectric material being different from the fifth dielectric material, wherein the second insulative fin is in physical contact with the second source/drain region, wherein the forming the first source/drain region forms part of a static random access memory device; and
forming a logic device located on an opposite side of the second insulative fin from the static random access memory device, a portion of the logic device being in physical contact with the second insulative fin.
9 . The method of claim 8 , wherein the forming the third dielectric material is performed at least in part with a flowable process.
10 . The method of claim 8 , wherein the third dielectric material comprises a metal oxide.
11 . The method of claim 8 , wherein the forming the first source/drain region forms the first source/drain region in contact with a first fin and the forming the second source/drain region forms the second source/drain region in contact with a second fin, and wherein a spacing between the first fin and the second fin is between about 42 nm and about 46 nm.
12 . The method of claim 8 , wherein the forming the third dielectric material forms a metal oxide.
13 . The method of claim 8 , wherein the forming the third dielectric material forms hafnium oxide.
14 . A method of manufacturing a semiconductor device, the method comprising:
forming a first fin and a second fin over a semiconductor substrate, a first region being located between the first fin and the second fin;
filling a first portion of the first region with a first dielectric material;
filling a second portion of the first region with a second dielectric material, wherein the filling the second portion of the first region is performed at least in part with a flowable process, wherein the flowable process is a spin-on process;
recessing the first dielectric material to expose sidewalls of the first fin, sidewalls of the second fin, and sidewalls of the second dielectric material;
further comprising filling a third portion of the first region with a third dielectric material prior to the filling the second portion of the first region, the third dielectric material being different from the first dielectric material and the second dielectric material;
forming a first source/drain region in physical contact with the second dielectric material, wherein the forming the first source/drain region forms part of a static random access memory device;
forming a second source/drain region in physical contact with the second dielectric material, the second source/drain region being located on an opposite side of the second dielectric material from the first source/drain region;
forming an insulative fin, the forming the insulative fin comprising:
forming the first dielectric material;
forming a third dielectric material over the first dielectric material, the third dielectric material being different from the first dielectric material;
forming a fourth dielectric material embedded within the third dielectric material, the fourth dielectric material being different from the third dielectric material; and
forming a fifth dielectric material overlying the fourth dielectric material, the fifth dielectric material being different from the fourth dielectric material, wherein the insulative fin is in physical contact with the second source/drain region; and
forming a logic device located on an opposite side of the insulative fin from the static random access memory device, a portion of the logic device being in physical contact with the insulative fin.
15 . The method of claim 14 , wherein the second dielectric material comprises a metal oxide.
16 . The method of claim 14 , wherein the second dielectric material comprises hafnium oxide.
17 . The method of claim 14 , wherein the second dielectric material comprises titanium oxide.
18 . The method of claim 14 , wherein the second dielectric material comprises zirconium oxide.
19 . The method of claim 14 , wherein the second dielectric material comprises tungsten oxide.
20 . The method of claim 14 , wherein the second dielectric material comprises aluminum oxide.