Stacked FETS with contact placeholder structures
A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region located on each side of a functional gate structure. A second FET device region is stacked above the first FET device region and includes a plurality of second FETs, each second FET of the plurality of second FETs includes a second source/drain region located on each side of a functional gate structure. The structure further includes at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one the first FETs, and at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at one of the second FETs.
1 . A semiconductor structure comprising:
a first field effect transistor (FET) device region comprising a plurality of first FETs, each first FET of the plurality of first FETs comprises a first source/drain region located on each side of a functional gate structure;
a second FET device region stacked above the first FET device region and comprising a plurality of second FETs, each second FET of the plurality of second FETs comprises a second source/drain region located on each side of a functional gate structure;
at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one of the first FETs;
at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at least one of the second FETs; and
a Vss power source and a backside power distribution network located beneath the first FET device region, wherein the at least one first front side contact placeholder structure contacts the VSS power source and the VSS power source is connected to the backside power distribution network.
2 . The semiconductor structure of claim 1 , wherein a middle portion of each first source/drain region is staggered relative to a middle portion of each second source/drain region.
3 . The semiconductor structure of claim 2 , wherein an end portion of each first source/drain region overlaps an end portion of each second source/drain region.
4 . The semiconductor structure of claim 2 , wherein the at least one first front side contact placeholder structure is staggered relative to the second front side contact placeholder structure, and the at least one first front side contact placeholder structure is located beneath one of the second source/drain regions of one of the second FETs, and the at least one second front side contact placeholder structure is located above one of the first source/drain regions of one of the first FETs.
5 . The semiconductor structure of claim 1 , further comprising a stacked FET device separating layer separating the first FET device region from the second FET device region.
6 . The semiconductor structure of claim 1 , further comprising a bottom dielectric isolation layer located beneath each first source/drain region and present in the first FET device region.
7 . The semiconductor structure of claim 1 , further comprising signal lines located above the second FET device region, wherein the signal lines are in contact with an additional back-end-of-the-line (BEOL) structure.
8 . The semiconductor structure of claim 7 , wherein a carrier wafer is located on the additional BEOL structure.
9 . The semiconductor structure of claim 1 , wherein another of the second source/drain regions is wired to a VDD power source by a backside source/drain contact structure that extends from the second FET device region and entirely through the first FET device region.
10 . The semiconductor structure of claim 1 , wherein another of the first source/drain regions is wired to the VSS power source by a backside source/drain contact structure that extends into the first FET device region.
11 . The semiconductor structure of claim 1 , wherein another of the first source/drain regions and another of the second source/drain regions are electrically connected by a shared source/drain contact structure.
12 . The semiconductor structure of claim 1 , wherein the at least one first front side contact placeholder structure and the at least one second front side contact placeholder structure both comprise a placeholder dielectric material.
13 . The semiconductor structure of claim 1 , wherein at least one of the first source/drain regions is wired to a signal line located above the second FET device region by a first source/drain region front side contact structure and a metal via.
14 . The semiconductor structure of claim 1 , wherein at least one of the second source/drain regions is wired to a signal line located above the second FET device region by a second source/drain region front side contact structure and a metal via.
15 . The semiconductor structure of claim 1 , wherein each of the first source/drain regions is located on a surface of a bottom dielectric isolation layer, and each of the second source/drain regions is located on a surface of a stacked FET device separating layer that is positioned between the first FET device region and the second FET device region.
16 . The semiconductor structure of claim 1 , wherein the first FETs and the second FETs are nanosheet containing FETs and wherein the functional gate structure wraps around a semiconductor channel material nanosheet that is present in each of the first FET device region and the second FET device region.
17 . The semiconductor structure of claim 1 , wherein the first FETs are of a first conductivity type and the second FETs are of a second conductivity type, and wherein the second conductivity type is a same conductivity type or a different conductivity type than the first conductivity type.
18 . A semiconductor structure comprising:
a first field effect transistor (FET) device region comprising a plurality of first FETs, each first FET of the plurality of first FETs comprises a first source/drain region located on each side of a functional gate structure;
a second FET device region stacked above the first FET device region and comprising a plurality of second FETs, each second FET of the plurality of second FETs comprises a second source/drain region located on each side of a functional gate structure;
at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one of the first FETs; and
at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at least one of the second FETs, wherein the at least one first contact placeholder structure extends through a shallow trench isolation region and a first interlayer dielectric material layer, the first interlayer dielectric material layer is located laterally adjacent to, and above, each first source/drain region, and the at least one second front side contact placeholder structure extends through a second interlayer dielectric material layer, the second interlayer dielectric material layer is located laterally adjacent to, and above, each second source/drain region.
19 . A semiconductor structure comprising:
a first field effect transistor (FET) device region comprising a plurality of first FETs, each first FET of the plurality of first FETs comprises a first source/drain region located on each side of a functional gate structure;
a second FET device region stacked above the first FET device region and comprising a plurality of second FETs, each second FET of the plurality of second FETs comprises a second source/drain region located on each side of a functional gate structure;
at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one of the first FETs; and
at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at least one of the second FETs, wherein the at least one first front side contact placeholder structure is staggered relative to the second front side contact placeholder structure, and the at least one first front side contact placeholder structure is located beneath one of the second source/drain regions of one of the second FETs, and the at least one second front side contact placeholder structure is located above one of the first source/drain regions of one of the first FETs.