Light emitting device and light emitting module having the same
A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.
1 . A light emitting device comprising:
a substrate having a protruding pattern on an upper surface thereof;
a first sub-unit disposed on the substrate;
a second sub-unit disposed between the substrate and the first sub-unit;
a third sub-unit disposed between the substrate and the second sub-unit;
a first insulation layer at least partially in contact with side surfaces of the first sub-unit, the second sub-unit, or the third sub-unit; and
a second insulation layer at least partially overlapping with the first insulation layer,
wherein at least one of the first insulation layer or the second insulation layer includes a distributed Bragg reflector,
wherein a first region of a side wall of at least one of the first sub-unit, the second sub-unit, or the third sub-unit is inclined at a first non-zero angle, and a second region of the side wall of the at least one of the first sub-unit, the second sub-unit, or the third sub-unit is inclined at a second non-zero angle that is different from the first non-zero angle, and
wherein a first side region of the substrate is inclined at a third non-zero angle.
2 . The light emitting device of claim 1 , wherein:
the substrate comprises a sapphire substrate; and
the protruding pattern comprises a same material as the substrate.
3 . The light emitting device of claim 2 , wherein:
the protruding pattern includes protrusions; and
a diameter of each of the protrusions is about 2 μm or less, and an interval between the protrusions is about 1 μm or less.
4 . The light emitting device of claim 3 , wherein the protrusions have conical shapes.
5 . The light emitting device of claim 1 , wherein:
the first sub-unit includes a first LED stack;
the second sub-unit includes a second LED stack;
the third sub-unit includes a third LED stack; and
the first to third LED stacks are configured to emit light of different wavelengths.
6 . The light emitting device of claim 5 , wherein the first LED stack, the second LED stack, and the third LED stack are configured to emit red light, blue light, and green light, respectively.
7 . The light emitting device of claim 5 , further comprising:
a first connection electrode electrically connected to the first LED stack;
a second connection electrode electrically connected to the second LED stack;
a third connection electrode electrically connected to the third LED stack; and
a fourth connection electrode electrically connected to each of the first, second, and third LED stacks.
8 . The light emitting device of claim 7 , wherein at least one of the first connection electrode, the second connection electrode, the third connection electrode, or the fourth connection electrode overlaps with a side surface of each of the first LED stack, the second LED stack, and the third LED stack.
9 . The light emitting device of claim 7 , further comprising a protection layer covering at least a portion of each of the first connection electrode, the second connection electrode, the third connection electrode, or the fourth connection electrode while exposing a side surface of the substrate.
10 . The light emitting device of claim 1 , further comprising:
a first adhesive layer disposed between the first sub-unit and the second sub-unit; and
a second adhesive layer disposed between the second sub-unit and the third sub-unit.
11 . The light emitting device of claim 10 , wherein a thickness of the substrate to an overall thickness of the first sub-unit, the second sub-unit, and the third sub-unit is in a range of 1.5:1 to 4:1.
12 . The light emitting device of claim 1 , wherein:
the first insulation layer includes SiO 2 ; and
the second insulation layer includes the distributed Bragg reflector including SiO 2 and TiO2 alternately disposed with each other.
13 . The light emitting device of claim 5 , wherein the distributed Bragg reflector is configured to reflect about 95% or more of light emitted from the first LED stack, the second LED stack, and the third LED stack.
14 . The light emitting device of claim 9 , wherein a thickness of the substrate is less than that of a partial region of the protection layer surrounding a outermost side surfaces of the first to fourth connection electrodes.
15 . The light emitting device of claim 9 , wherein a thickness of the substrate is greater than that of a partial region of the protection layer disposed in a region vertically overlapping with the first sub-unit.
16 . A light emitting module, comprising:
a circuit board;
a light emitting device disposed on the circuit board; and
a protection layer covering the light emitting device,
wherein the light emitting device comprises:
a substrate having a protruding pattern on an upper surface thereof;
a first sub-unit disposed on the substrate;
a second sub-unit disposed between the substrate and the first sub-unit;
a third sub-unit disposed between the substrate and the second sub-unit;
a first insulation layer partially in contact with side surfaces of the first sub-unit, the second sub-unit, or the third sub-unit; and
a second insulation layer at least partially overlapping with the first insulation layer, and
wherein at least one of the first insulation layer or the second insulation layer includes a distributed Bragg reflector,
wherein a first region of the protection layer is disposed on a side region of at least one of the first sub-unit, the second sub-unit, or the third sub-unit and is inclined at a first non-zero angle, and a second region of the protection layer is disposed on the side region of the at least one of the first sub-unit, the second sub-unit, or the third sub-unit and is inclined at a second non-zero angle that is different from the first non-zero angle, and
wherein a first side region of the substrate is inclined at a third non-zero angle.
17 . The light emitting module of claim 16 , wherein:
the substrate comprises a sapphire substrate; and
the protruding pattern comprises a same material as the substrate.
18 . The light emitting module of claim 16 , wherein:
the first sub-unit includes a first LED stack;
the second sub-unit includes a second LED stack;
the third sub-unit includes a third LED stack; and
a thickness of the substrate to an overall thickness of the first sub-unit, the second sub-unit, and the third sub-unit is in a range of 1.5:1 to 4:1.
19 . The light emitting module of claim 16 , wherein:
the first insulation layer includes SiO 2 ; and
the second insulation layer includes the distributed Bragg reflector.
20 . The light emitting module of claim 19 , wherein the distributed Bragg reflector includes SiO 2 and TiO 2 disposed alternately with each other.
21 . The light emitting device of claim 1 , wherein the first region of the side wall of the substrate is inclined in a direction that is opposite to a direction in which the first region of the side wall of the at least one of the first sub-unit, the second sub-unit, or the third sub-unit is inclined.