Pixel structure with high aspect ratio conductive lines for improved aperture ratio
A pixel structure is provided. The pixel structure includes a substrate and a conductive line electrically connected to the substrate. The ratio of the height to the width of the conductive line is between 0.5 and 6. The pixel structure also includes an electrode electrically connected to the conductive line and a conversion element electrically connected to the conductive lines through the electrode.
1 . A pixel structure, comprising
a substrate;
at least one conductive line electrically connected to the substrate, wherein a ratio of a height to a width of the at least one conductive line is between 0.5 and 6;
an electrode electrically connected to the at least one conductive line; and
a conversion element electrically connected to the at least one conductive line through the electrode,
wherein an orthogonal projection of the at least one conductive line on the substrate does not overlap an orthogonal projection of a display region on the substrate, the display region is defined as an area encompassing boundaries of a plurality of display elements of the pixel structure, the at least one conductive line is electrically connected to the substrate through a via hole and a conductive layer filled in the via hole, the at least one conductive line has a concave portion at the top, and the concave portion corresponds to the via hole.
2 . The pixel structure as claimed in claim 1 , wherein the width of the at least one conductive line is 2 μm.
3 . The pixel structure as claimed in claim 1 , wherein the ratio of the height to the width of the at least one conductive line is between 2 and 5.
4 . The pixel structure as claimed in claim 1 , wherein an included angle between the via hole and a plane parallel to a surface of the substrate is between 60 degrees and 85 degrees.
5 . The pixel structure as claimed in claim 1 , further comprising:
an interlayer dielectric layer disposed between the substrate and the at least one conductive line, wherein the via hole penetrates the interlayer dielectric layer.
6 . The pixel structure as claimed in claim 5 , wherein the at least one conductive line comprises two or more conductive lines, and the pixel structure further comprises:
a first conductor layer disposed in the interlayer dielectric layer and between the substrate and the conductive lines.
7 . The pixel structure as claimed in claim 6 , wherein one of the conductive lines is electrically connected to the first conductor layer.
8 . The pixel structure as claimed in claim 6 , further comprising:
a second conductor layer disposed in the interlayer dielectric layer and between the first conductor layer and the conductive lines.
9 . The pixel structure as claimed in claim 8 , wherein one of the conductive lines is electrically connected to the second conductor layer.
10 . The pixel structure as claimed in claim 1 , wherein a portion of the electrode is disposed in the concave portion.
11 . The pixel structure as claimed in claim 1 , further comprising:
a planarization layer disposed between the at least one conductive line and the conversion element.
12 . The pixel structure as claimed in claim 1 , wherein the at least one conductive line is electrically connected to the conversion element through a via hole and the electrode filled in the via hole.
13 . The pixel structure as claimed in claim 12 , wherein the substrate has a conductive metal, the conversion element is electrically connected to the conductive metal through another via hole and another electrode filled in the another via hole, and an included angle between the another via hole and a plane parallel to a surface of the substrate is between 60 degrees and 85 degrees.
14 . The pixel structure as claimed in claim 1 , wherein the substrate has a conductive metal, the conductive metal has a via hole, a portion of the at least one conductive line is disposed in the via hole, and an included angle between the via hole and a plane parallel to a surface of the substrate is between 60 degrees and 85 degrees.
15 . The pixel structure as claimed in claim 1 , wherein the conversion element is a light-emitting element, and the substrate further comprises a reflective electrode disposed between the substrate and the conversion element.
16 . The pixel structure as claimed in claim 1 , wherein the at least one conductive line is a data line or a scan line of the pixel structure.
17 . The pixel structure as claimed in claim 1 , wherein the at least one conductive line is electrically connected to an N-type semiconductor material layer of a PIN diode through a via hole and a conductive layer filled in the via hole, and an included angle between the via hole and a plane parallel to a surface of the substrate is between 60 degrees and 85 degrees.