Protecting a non-volatile solid-state memory from an unauthorized access
An approach is provided for protecting data stored by a non-volatile solid-state memory from an unauthorized access. In response to a trigger event indicating an increased probability of the unauthorized access, the memory is destroyed by directing through the memory an electric current exceeding a rated current of the memory, and testing an operability of the memory, where the destruction is completed when the test indicates lacking operability of the memory.
1 . A computer-implemented method of protecting data stored by a non-volatile solid-state memory from an unauthorized access, the method comprising:
in response to a trigger event indicating an increased probability of the unauthorized access, destroying the memory by directing through the memory an electric current exceeding a rated current of the memory; and
in response to directing through the memory the electric current exceeding the rated current of the memory, testing an operability of the memory by directing a command to the memory intended to cause a response from the memory, wherein the destroying is completed when the testing indicates a lacking of an operability of the memory to cause the response.
2 . The method of claim 1 , the destroying comprising a plurality of repetitions of directing the electric current through the memory.
3 . The method of claim 2 , the current being successively increased during the repetitions.
4 . The method of claim 3 , wherein, for each of the repetitions, the current is selected from a predefined set of currents exceeding standard values of the rated current.
5 . The method of claim 1 , the current being generated by discharging a capacitor of a memory device incorporating the memory.
6 . The method of claim 5 , wherein:
the generation of the current further comprises charging the capacitor at a voltage exceeding a rated charging voltage of the capacitor in order to force the capacitor to collect more charge carriers than could be collected by charging the capacitor at the rated charging voltage; and
a higher current density is achieved inside the memory by discharging the capacitor, having been overcharged, through the memory.
7 . The method of claim 1 , the memory being a component of a memory device functionally coupled to a computing device electrically connected to a power source, the method further comprising establishing an electrical connection from the memory device to the power source for generating the current.
8 . The method of claim 7 , the electrical connection between the power source and the computing device being provided by a communications network, wherein the communications network includes a power-over-ethernet connection.
9 . The method of claim 1 , the trigger event being selected from the group consisting of a receipt of a signal indicating an attempt of unauthorized mechanical manipulation of a first computing device incorporating the memory, a receipt of an instruction requiring destruction of the memory, a power-up of the memory device outside a predefined geographic area, a mechanical detachment of the memory from the first computing device, and an establishment of a functional coupling of the memory to a second computing device different from the first computing device.
10 . The method of claim 1 , wherein the destroying is limited to the memory.
11 . A circuitry comprising a memory controller, where the memory controller is configured to control a non-volatile solid-state memory, and protect data stored by the memory from an unauthorized access, the memory controller performing operations comprising:
in response to a trigger event indicating an increased probability of the unauthorized access, destroying the memory by directing through the memory an electric current exceeding a rated current of the memory; and
in response to directing through the memory the electric current exceeding the rated current of the memory, testing an operability of the memory by directing a command to the memory intended to cause a response from the memory, wherein the destroying is completed when the test indicates a lacking of an operability of the memory to cause the response.
12 . The circuitry of claim 11 , the destroying comprising a plurality of repetitions of directing the electric current through the memory.
13 . The circuitry of claim 12 , the current being successively increased during the repetitions.
14 . The circuitry of claim 11 , the current being generated by discharging a capacitor of a memory device incorporating the memory.
15 . The circuitry of claim 11 , wherein the trigger event comprises detecting an attempt of unauthorized mechanical manipulation of a computing device incorporating the memory.
16 . A computer program product comprising a non-transitory computer readable storage medium having program instructions embodied therewith, the program instructions being executable by a processor functionally coupled to a non-volatile solid-state memory to cause the processor to perform a method of protecting data stored by the memory from an unauthorized access, the method comprising:
in response to a trigger event indicating an increased probability of the unauthorized access, destroying the memory by directing through the memory an electric current exceeding a rated current of the memory; and
in response to directing through the memory the electric current exceeding the rated current of the memory, testing an operability of the memory by directing a command to the memory intended to cause a response from the memory, wherein the destroying is completed when the test indicates a lacking of an operability of the memory to cause the response;
wherein the current is generated by discharging a capacitor of a memory device incorporating the memory;
wherein the generation of the current further comprises charging the capacitor at a voltage exceeding a rated charging voltage of the capacitor in order to force the capacitor to collect more charge carriers than could be collected by charging the capacitor at the rated charging voltage; and
wherein a higher current density is achieved inside the memory by discharging the capacitor, having been overcharged, through the memory.
17 . The computer program product of claim 16 , the destroying comprising a plurality of repetitions of directing the electric current through the memory.
18 . The computer program product of claim 17 , the current being successively increased during the repetitions.
19 . The computer program product of claim 16 , the trigger event being selected from the group consisting of a receipt of a signal indicating an attempt of unauthorized mechanical manipulation of a first computing device incorporating the memory, a receipt of an instruction requiring destruction of the memory, a power-up of the memory device outside a predefined geographic area, a mechanical detachment of the memory from the first computing device, and an establishment of a functional coupling of the memory to a second computing device different from the first computing device.