Pixel circuit and display device having the same

1 . A pixel circuit comprising:

a driving transistor which generates a driving current, wherein the driving transistor includes a first electrode connected to a first node, a gate electrode connected to a gate node, and a second electrode connected to a second node;

a writing transistor connected to the driving transistor through the first node, wherein the writing transistor includes a first electrode which receives a data voltage, a gate electrode which receives a write gate signal, and a second electrode connected to the first node;

a compensation transistor including a gate electrode, a first electrode connected to the gate node, and a second electrode connected to the second node;

a gate-drain capacitor connected in parallel with the compensation transistor, wherein the gate-drain capacitor includes a first electrode connected to the gate node and a second electrode connected to the second node; and

a light emitting element which emits light based on the driving current,

wherein

the gate-drain capacitor lowers a voltage of the gate node by a first change amount in a first mode in which the light emitting element is driven in a first gradation,

the gate-drain capacitor lowers the voltage of the gate node by a second change amount in a second mode in which the light emitting element is driven in a second gradation greater than the first gradation, and

the first change amount is greater than the second change amount.

2 . The pixel circuit of claim 1 , further comprising:

a first light emitting transistor including a first electrode which receives a driving voltage, a gate electrode which receives a light emitting control signal, and a second electrode connected to the first node; and

a second light emitting transistor including a first electrode connected to the second node, a gate electrode which receives the light emitting control signal, and a second electrode connected to a third node,

wherein

the first light emitting transistor is connected to the driving transistor through the first node, and

the second light emitting transistor is connected to the gate-drain capacitor through the second node.

3 . The pixel circuit of claim 2 , further comprising:

an anode initialization transistor including a first electrode which receives an anode initialization voltage, a gate electrode which receives the write gate signal, and a second electrode connected to the third node; and

a storage capacitor including a first electrode which receives the driving voltage and a second electrode connected to the gate node,

wherein

the anode initialization transistor is connected to the light emitting element through the third node, and

the storage capacitor is connected to the gate-drain capacitor through the gate node.

4 . The pixel circuit of claim 3 , further comprising:

a gate initialization transistor including a first electrode which receives a gate initialization voltage, a gate electrode which receives an initialization gate signal, and a second electrode connected to the gate node,

wherein the gate initialization transistor is connected to the gate-drain capacitor through the gate node.

5 . The pixel circuit of claim 4 , wherein

the gate electrode of the compensation transistor receives the write gate signal, and

each of the compensation transistor and the gate initialization transistor is a P-channel metal oxide semiconductor transistor.

6 . The pixel circuit of claim 4 , wherein

the gate electrode of the compensation transistor receives a compensation gate signal, and

each of the compensation transistor and the gate initialization transistor is an N-channel metal oxide semiconductor transistor.

7 . The pixel circuit of claim 6 , further comprising:

a boost capacitor including a first electrode which receives the write gate signal and a second electrode connected to the gate node; and

a negative boost capacitor including a first electrode which receives the compensation gate signal and a second electrode connected to the gate node,

wherein

the boost capacitor is connected to the gate-drain capacitor through the gate node, and

the negative boost capacitor is connected to the gate-drain capacitor through the gate node.

8 . A display device comprising:

a substrate;

a first active pattern disposed on the substrate;

a first conductive layer disposed on the first active pattern and including a first storage electrode;

a second conductive layer disposed on the first conductive layer and including a second storage electrode overlapping the first storage electrode;

a second active pattern disposed on the second conductive layer and including a first capacitor electrode;

a third conductive layer disposed on the second active pattern; and

a fourth conductive layer disposed on the third conductive layer and including a second capacitor electrode connected to the first storage electrode.

9 . The display device of claim 8 , wherein

the second capacitor electrode overlaps the first capacitor electrode, and

the first capacitor electrode and the second capacitor electrode collectively define a gate-drain capacitor.

10 . The display device of claim 9 , wherein

the first conductive layer further includes a first boost electrode,

the second active pattern further includes a second boost electrode overlapping the first boost electrode, and

the first boost electrode and the second boost electrode collectively define a boost capacitor.

11 . The display device of claim 9 , wherein

the first conductive layer further includes a first negative boost electrode,

the third conductive layer further includes a second negative boost electrode overlapping the first negative boost electrode, and

the first negative boost electrode and the second negative boost electrode collectively define a negative boost capacitor.

12 . The display device of claim 9 , wherein the first storage electrode and the second storage electrode collectively define a storage capacitor.

13 . The display device of claim 9 , wherein

the first active pattern includes a silicon semiconductor, and

the second active pattern includes an oxide semiconductor.