IP Library › Granted Patent US 12,498,524
Granted Patent B2
US 12,498,524 · App. 18/209,710 · Granted Dec 16, 2025

Structures including a grating coupler and a layer exhibiting an electric-field-induced pockels effect

Inventor: Yusheng Bian (Ballston Lake, NY)
Assignee: GlobalFoundries U.S. Inc.
G02B6/34G02B6/124G02F1/035
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Quick Facts
Patent No.
US 12,498,524
App. No.
18/209,710
Granted
Dec 16, 2025
Kind
B2
Abstract

Structures including a grating coupler and a layer that exhibits an electric-field-induced Pockels effect and methods of forming such structures. The structure comprises a first grating coupler on a substrate, a second grating coupler having an overlapping relationship with the first grating coupler, and a layer including a portion having an overlapping relationship with the second grating coupler. The layer comprises a material that exhibits an electric-field-induced Pockels effect.

Claims (41)

1 . A structure for a photonics chip, the structure comprising:

a first substrate;

a first grating coupler on the first substrate;

a second grating coupler having an overlapping relationship with the first grating coupler; and

a layer including a portion that has an overlapping relationship with the second grating coupler, the layer comprising a material that exhibits an electro-optic effect,

wherein the layer is laterally offset to provide an unobstructed light path from an out-of-plane light source to the first grating coupler so that light is transferred successively, by optical coupling, from the first grating coupler to the second grating coupler and from the second grating coupler to the portion of the layer.

2 . The structure of claim 1 wherein the layer fully overlaps with the second grating coupler.

3 . The structure of claim 1 wherein the material is lithium niobate.

4 . The structure of claim 1 wherein the material is a III-V compound semiconductor.

5 . The structure of claim 1 wherein the material is lithium tantalate, lithium niobate doped with magnesium oxide, or barium titanate.

6 . The structure of claim 1 wherein the material is crystalline and lacks inversion symmetry.

7 . The structure of claim 1 further comprising:

a reflector over the layer,

wherein the layer is disposed between the reflector and the second grating coupler.

8 . The structure of claim 7 wherein the reflector is a sheet comprising a metal.

9 . The structure of claim 7 wherein the reflector overlaps with the portion of the layer.

10 . The structure of claim 1 further comprising:

a second substrate; and

a first dielectric layer on the second substrate,

wherein the layer is disposed on the first dielectric layer.

11 . The structure of claim 10 further comprising:

a second dielectric layer that includes a portion between the second grating coupler and the layer.

12 . The structure of claim 11 wherein the portion of the second dielectric layer and the layer adjoin along a bonding interface.

13 . The structure of claim 1 wherein the portion of the layer includes a third grating coupler having an overlapping relationship with the second grating coupler.

14 . The structure of claim 1 wherein the first grating coupler comprises silicon, and the second grating coupler comprises silicon nitride.

15 . A structure for a photonics chip, the structure comprising:

a substrate;

a first grating coupler on the substrate; and

a layer including a second grating coupler, the second grating coupler having an overlapping relationship with the first grating coupler, and the layer comprising a material that exhibits an electro-optic effect,

wherein the layer is laterally offset to provide an unobstructed light path from an out-of-plane light source to the first grating coupler so that light is transferred successively, by optical coupling, from the first grating coupler to the second grating coupler and from the second grating coupler to the portion of the layer.

16 . The structure of claim 15 further comprising:

a reflector,

wherein the second grating coupler has an overlapping relationship with the reflector.

17 . A method of forming a structure for a photonics chip, the method comprising:

forming a first grating coupler on a first substrate;

forming a second grating coupler that has an overlapping relationship with the first grating coupler; and

forming a layer that includes a portion having an overlapping relationship with the second grating coupler, wherein the layer comprises a material that exhibits an electro-optic effect,

wherein the layer is laterally offset to provide an unobstructed light path from an out-of-plane light source to the first grating coupler so that light is transferred successively, by optical coupling, from the first grating coupler to the second grating coupler and from the second grating coupler to the portion of the layer.

18 . The method of claim 17 further comprising:

forming a second dielectric layer that includes a portion over the second grating coupler,

wherein the layer is formed on a second substrate, and the layer is bonded to the portion of the second dielectric layer along a bonding interface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2023
From: BIAN, YUSHENG
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 063948/0375 →
Continuity (1)
Related Publication 20240419022A1 · Dec 19, 2024
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