Substrate processing apparatus and substrate processing method
A substrate processing apparatus includes a processing bath, a first lid member, an outer bath, a processing liquid introduction unit, a first gas supply unit, and a second gas supply unit. The processing bath stores a processing liquid in which a substrate is immersed. The first lid member covers an upper opening of the processing bath. The outer bath is provided outside of the processing bath and a processing liquid overflowing out of the processing liquid from the processing bath flows into the outer bath. The processing liquid introduction unit is able to introduce the processing liquid stored in the outer bath into the processing bath. The first gas supply unit supplies a first inert gas to the processing liquid stored in the processing bath. The second gas supply unit supplies a second inert gas into the outer bath.
1 . A substrate processing apparatus comprising:
a processing bath to store a processing liquid in which a substrate is immersed;
a first lid member to cover an upper opening of the processing bath;
an outer bath that is provided outside of the processing bath, and into which the processing liquid overflowing out of the processing liquid from the processing bath flows;
a processing liquid introducer to introduce the processing liquid stored in the outer bath into the processing bath;
a first gas supply to supply a first inert gas to the processing liquid stored in the processing bath; and
a second gas supply to supply a second inert gas into the outer bath, wherein
the second gas supply is provided in the outer bath and ejects the second inert gas upward, and
the second gas supply is disposed in the processing liquid in the outer bath when the second gas supply supplies the second inert gas.
2 . The substrate processing apparatus according to claim 1 , further comprising a substrate holder to hold a plurality of substrates in a predetermined direction and immerse the plurality of substrates in the processing liquid stored in the processing bath,
wherein the processing bath includes a pair of side walls extending in the predetermined direction,
wherein the first lid member includes a contact section that comes into contact with the processing liquid,
wherein the contact section is separated from the plurality of substrates, and
wherein the contact section includes
a first tilted portion that is tilted obliquely upward from a position facing a top of the plurality of substrates to one side wall of the pair of side walls in a state in which the first lid member covers the upper opening of the processing bath; and
a second tilted portion that is tilted obliquely upward from the position facing the top of the plurality of substrates to the other side wall of the pair of side walls in the state in which the first lid member covers the upper opening of the processing bath.
3 . The substrate processing apparatus according to claim 1 , further comprising a second lid member covering an upper opening of the outer bath,
wherein the first lid member covers the upper opening of the processing bath and the second lid member.
4 . The substrate processing apparatus according to claim 1 , wherein the processing liquid is alkaline.
5 . A substrate processing apparatus comprising:
a processing bath to store a processing liquid in which a substrate is immersed;
a first lid member to cover an upper opening of the processing bath;
an outer bath that is provided outside of the processing bath, and into which the processing liquid overflowing out of the processing liquid from the processing bath flows;
a processing liquid introducer to introduce the processing liquid stored in the outer bath into the processing bath;
a first gas supply to supply a first inert gas to the processing liquid stored in the processing bath;
a second gas supply to supply a second inert gas into the outer bath;
a gas flow rate adjuster to adjust a flow rate of the first inert gas; and
a first controller to control the gas flow rate adjuster,
wherein the first controller controls the gas flow rate adjuster such that the flow rate of the first inert gas in a period in which the substrate is not immersed in the processing liquid is higher than the flow rate of the first inert gas in an entire period in which the substrate is immersed in the processing liquid, and
wherein the entire period in which the substrate is immersed in the processing liquid includes a first period in which the substrate is getting immersed in the processing liquid, and a second period extending for a duration in which the substrate is being processed by the processing liquid.
6 . The substrate processing apparatus according to claim 5 , wherein the second gas supply is provided in the outer bath and ejects the second inert gas downward.
7 . The substrate processing apparatus according to claim 5 , wherein the first controller controls the gas flow rate adjuster such that the flow rate of the first inert gas in the period in which the substrate is not immersed in the processing liquid is a maximum flow rate.
8 . A substrate processing apparatus comprising:
a processing bath to store a processing liquid in which a substrate is immersed;
a first lid member to cover an upper opening of the processing bath;
an outer bath that is provided outside of the processing bath, and into which the processing liquid overflowing out of the processing liquid from the processing bath flows;
a processing liquid introducer to introduce the processing liquid stored in the outer bath into the processing bath;
a first gas supply to supply a first inert gas to the processing liquid stored in the processing bath; and
a second gas supply configured to supply a second inert gas into the outer bath,
wherein the processing liquid introducer includes:
a pipe that connects the outer bath and the processing bath and in which the processing liquid flows; and
a pump that pumps out the processing liquid from the outer bath to the processing bath via the pipe,
wherein the substrate processing apparatus further comprises a second controller to control the pump,
wherein the second controller controls the pump such that a flow rate of the processing liquid flowing in the pipe in an entire period in which the substrate is immersed in the processing liquid is less than a flow rate of the processing liquid flowing in the pipe in a period in which the substrate is not immersed in the processing liquid, and
wherein the entire period in which the substrate is immersed in the processing liquid includes a first period in which the substrate is getting immersed in the processing liquid, and a second period extending for a duration in which the substrate is being processed by the processing liquid.
9 . The substrate processing apparatus according to claim 8 , wherein the second controller stops the pump in the period in which the substrate is immersed in the processing liquid.
10 . The substrate processing apparatus according to claim 8 , wherein the second controller controls the pump such that the flow rate of the processing liquid flowing in the pipe in the period in which the substrate is not immersed in the processing liquid is a maximum flow rate.
11 . The substrate processing apparatus according to claim 8 , wherein the second gas supply is provided in the outer bath and ejects the second inert gas downward.