Integrated fan-out package having stress release structure
A semiconductor package includes a first die, a second die and a buffer layer. The first die and the second die are stacked on the first die. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall opposite to the first sidewall of the second die is flush with a third sidewall of the first die.
1 . A semiconductor package, comprising:
a first die and a second die stacked on the first die; and
a buffer layer, extending along a first sidewall of the second die, wherein a second sidewall opposite to the first sidewall of the second die is flush with a third sidewall of the first die, wherein the second sidewall of the second die is exposed by the buffer layer, and a sidewall of the buffer layer is flush with a fourth sidewall opposite to the third sidewall of the first die.
2 . The semiconductor package according to claim 1 further comprising a third die between the first die and the second die, wherein the buffer layer is further extending along a sidewall of the third die.
3 . The semiconductor package according to claim 2 , wherein a width of a portion of the buffer layer extending along the second die is different from a width of a portion of the buffer layer extending along the third die.
4 . A semiconductor package, comprising:
a redistribution structure;
a first package bonded to the redistribution structure and comprising a first die and a second die;
a second package bonded to the redistribution structure;
a first buffer layer, disposed on a sidewall of the second die;
a second buffer layer, disposed on a sidewall of the second package, wherein the first buffer layer and the second buffer layer are disposed between the first package and the second package; and
an underfill between the first package and the redistribution structure and between the first buffer layer and the second package, wherein the underfill is in direct contact with a sidewall of the first die.
5 . The semiconductor package according to claim 4 further comprising an encapsulant encapsulating the first package and the second package, wherein a sidewall of the encapsulant is flush with a sidewall of the redistribution structure.
6 . The semiconductor package according to claim 4 , wherein the first buffer layer surrounds the first package.
7 . The semiconductor package according to claim 4 , wherein the first buffer layer is in direct contact with the second die.
8 . The semiconductor package according to claim 4 , wherein the second package comprises a third die, and the second buffer layer is in direct contact with a sidewall of the third die.
9 . The semiconductor package according to claim 4 , wherein a sidewall of the first buffer layer is flush with a sidewall of the first die.
10 . The semiconductor package according to claim 4 , wherein the redistribution structure is a continuous structure disposed continuously under the first package and the second package.
11 . A semiconductor package, comprising:
a first die and a second die stacked on the first die; and
a buffer layer, extending along a first sidewall of the second die, wherein a second sidewall opposite to the first sidewall of the second die is flush with a third sidewall of the first die, and an outer sidewall of the buffer layer extending along the second die is flush with a fourth sidewall opposite to the third sidewall of the first die.
12 . The semiconductor package according to claim 11 , wherein an inner sidewall of the buffer layer is in direct contact with the first sidewall of the second die.
13 . The semiconductor package according to claim 11 , further comprising an encapsulant encapsulating the first die and the second die, wherein the outer sidewall of the buffer layer is in direct contact with the encapsulant.
14 . The semiconductor package according to claim 11 further comprising a third die between the first die and the second die, wherein the buffer layer is further disposed extending along a fifth sidewall of the third die.
15 . The semiconductor package according to claim 14 , wherein an outer sidewall of the buffer layer extending along the third die is flush with the fourth sidewall of the first die.
16 . The semiconductor package according to claim 14 , wherein a sixth sidewall opposite to the fifth sidewall of the third die is flush with the third sidewall of the first die.
17 . The semiconductor package according to claim 14 , wherein a width of the buffer layer extending along the second die is different from a width of the buffer layer extending along the third die.
18 . The semiconductor package according to claim 1 , wherein the first sidewall is physically connected to a first surface and a second surface of the second die, and the buffer layer continuously extends from the first surface to the second surface of the second die.
19 . The semiconductor package according to claim 1 further comprising an encapsulant encapsulating the first die and the second die, wherein the buffer layer is disposed between the second die and the encapsulant.
20 . The semiconductor package according to claim 1 , wherein the second die comprises a substrate, and a Young's modulus of the buffer layer is smaller than a Young's modulus of the substrate.