IP Library Granted Patent US 12,501,839
Granted Patent B2
US 12,501,839 · App. 18/414,001 · Granted Dec 16, 2025

Superconducting qubit and device including the same

Inventors: Dae Yun Kim (Suwon-si, KR); Dae Seok Han (Suwon-si, KR); Kyung Mee Song (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H10N60/12G06N10/40H01P7/082H10N60/82H10N60/85
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Quick Facts
Patent No.
US 12,501,839
App. No.
18/414,001
Granted
Dec 16, 2025
Kind
B2
Abstract

A superconducting qubit-based device includes: a superconducting qubit comprising a first conductive pad and a second conductive pad, each being formed of a superconducting material, and a ferromagnetic body configured to form a Josephson junction with the first conductive pad and the second conductive pad; a conducting wire spaced apart from the ferromagnetic body by a predetermined distance; and a control circuit configured to control a resonance frequency of the superconducting qubit by controlling a current flowing through the conducting wire.

Claims (33)

1 . A superconducting qubit-based device, comprising:

a superconducting qubit comprising a first conductive pad and a second conductive pad, each being formed of a superconducting material, and a ferromagnetic body configured to form a Josephson junction with the first conductive pad and the second conductive pad;

a conducting wire spaced apart from the ferromagnetic body by a predetermined distance; and

a control circuit configured to control a resonance frequency of the superconducting qubit by controlling a current flowing through the conducting wire.

2 . The device of claim 1 , wherein the ferromagnetic body comprises a magnetic domain wall.

3 . The device of claim 2 , wherein the control circuit is configured to move the magnetic domain wall by controlling the current flowing through the conducting wire to produce a magnetic field greater than or equal to a predetermined critical value.

4 . The device of claim 3 , wherein the control circuit is configured to control the resonance frequency by generating the magnetic field greater than or equal to the predetermined critical value using a model that defines a relationship between a position of the magnetic domain wall and a critical current and a model that defines a relationship between the critical current and the resonance frequency of the superconducting qubit.

5 . The device of claim 3 , wherein the control circuit is configured to generate a magnetic field in the form of a pulse by controlling the current flowing through the conducting wire.

6 . The device of claim 1 , wherein

the conducting wire is spaced apart from the first conductive pad and the second conductive pad by a predetermined distance, and

the conducting wire is positioned between the first conductive pad and the second conductive pad.

7 . The device of claim 1 , wherein the superconducting material comprises any one or any combination of any two or more of aluminum (Al), niobium (Nb), indium (In), alpha-tantalum (α-Ta), titanium (Ti), lead (Pb), vanadium (V), and compounds thereof.

8 . The device of claim 1 , wherein the ferromagnetic body comprises any one or any combination of any two or more of Pt/Co/MgO, Pt/Co/AlOx, Pt/CoFeB/MgO, Pt/(Co/Ni)n, and Pt/(Co/Pt)n.

9 . The device of claim 1 , wherein the superconducting qubit is a transmon-type qubit.

10 . The device of claim 1 , wherein the superconducting qubit is used as a qubit coupler.

11 . The device of claim 1 , wherein either one or both of the first conductive pad and the second conductive pad has a thickness of 50 nm or more and 400 nm or less.

12 . The device of claim 1 , wherein the superconducting qubit, the conducting wire, and the control circuit are formed in a layered structure.

13 . A method of controlling a resonance frequency using a superconducting qubit-based device, wherein the superconducting qubit-based device comprises a superconducting qubit comprising a ferromagnetic body configured to form a Josephson junction with a first conductive pad and a second conductive pad, and a conducting wire, the method comprising:

applying a current to the conducting wire such that a magnetic field greater than or equal to a predetermined critical value is generated; and

controlling a resonance frequency of the superconducting qubit by moving a magnetic domain wall in the ferromagnetic body according to the application of the current.

14 . The method of claim 13 , wherein the applying of the current comprises applying the current such that a magnetic field in the form of a pulse is generated.

15 . The method of claim 13 , wherein the controlling of the resonance frequency comprises controlling the resonance frequency using a model that defines a relationship between a position of the magnetic domain wall and a critical current and a model that defines a relationship between the critical current and the resonance frequency of the superconducting qubit.

16 . A superconducting qubit comprising:

a first conductive pad and a second conductive pad, each being formed of a superconducting material; and

a ferromagnetic body configured to form a Josephson junction with the first conductive pad and the second conductive pad,

wherein the ferromagnetic body comprises a magnetic domain wall.

17 . The superconducting qubit of claim 16 , wherein the magnetic domain wall is moved by a current flowing through a conducting wire spaced apart from the ferromagnetic body by a predetermined distance.

18 . The superconducting qubit of claim 17 , wherein the magnetic domain wall is moved when an intensity of a magnetic field generated by the current flowing through the conducting wire is greater than or equal to a predetermined critical value.

19 . A superconducting qubit-based device, comprising:

the superconducting qubit of claim 16 ;

a conducting wire spaced apart from the ferromagnetic body; and

a control circuit configured to control a resonance frequency of the superconducting qubit by controlling a current flowing through the conducting wire.

20 . The superconducting qubit of claim 16 , wherein the magnetic domain wall is movable in the ferromagnetic body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2024
From: KIM, DAE YUN; HAN, DAE SEOK; SONG, KYUNG MEE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 066146/0437 →
Priority Claims (1)
KR 10-2023-0076974 · Jun 15, 2023 · national
Continuity (1)
Related Publication 20240423101A1 · Dec 19, 2024
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