IP Library › Granted Patent US 12,504,504
Granted Patent B2
US 12,504,504 · App. 18/192,627 · Granted Dec 23, 2025

Phase shifting system, RF chip, and radar sensor

Inventors: Tao Liu (Shanghai, CN); Jiashu Chen (Shanghai, CN); Zhengdong Liu (Shanghai, CN); Wenting Zhou (Shanghai, CN)
Assignee: Calterah Semiconductor Technology (Shanghai) Co., Ltd.
G01S7/032G01S7/023G01S13/325
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,504,504
App. No.
18/192,627
Granted
Dec 23, 2025
Kind
B2
Abstract

A phase shifting system, a chip, and a radar sensor are provided. A respective transmission line phase-shifting unit is configured to receive at least one phase shifting control signal and to shift a phase of a RF signal by a first phase or a second phase. Each transmission line phase-shifting unit includes a first group of transmission lines and a second group of transmission lines. At least some transmission lines in the first group of transmission lines of each transmission line phase-shifting unit are physically isolated from at least some transmission lines in the first group of transmission lines of an adjacent transmission line phase-shifting unit and transmission lines of the second group of transmission lines of each transmission line phase-shifting unit are coupled to respective transmission lines of the second group of transmission lines of an adjacent transmission line phase-shifting unit.

Claims (48)

1 . A phase shifting system, comprising at least two cascaded transmission line phase-shifting units, wherein

a respective transmission line phase-shifting unit of the at least two cascaded transmission line phase-shifting units is configured to receive at least one phase shifting control signal and to shift a phase of a radio frequency (RF) signal by a first phase or a second phase according to the at least one phase shifting control signal;

each transmission line phase-shifting unit comprises a plurality of groups of transmission lines including a first group of transmission lines and a second group of transmission lines;

a first subset of transmission lines in the first group of transmission lines of each transmission line phase-shifting unit are physically isolated from a second subset of transmission lines in the first group of transmission lines of an adjacent transmission line phase-shifting unit to prevent current transmission between the first subset of transmission lines and the second subset of transmission lines; and

transmission lines of the second group of transmission lines of each transmission line phase-shifting unit are coupled to respective transmission lines of the second group of transmission lines of an adjacent transmission line phase-shifting unit.

2 . The phase shifting system of claim 1 , wherein the phase shifting system further comprises:

a RF inverter disposed at a front stage or last stage of the at least two transmission line phase-shifting units.

3 . The phase shifting system of claim 2 , wherein the RF inverter includes a signal interface, wherein

the signal interface is connected with the second group of transmissions lines of the first of the at least two transmission line phase-shifting units and is physically isolated from at least part of transmission lines in the first group of transmission lines of the first of the at least two transmission line phase-shifting units.

4 . The phase shifting system of claim 1 , wherein

the respective transmission line phase-shifting unit is configured as a single-ended transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of ground wires and a single-ended signal line, and the second group of transmission lines includes a second pair of ground wires and the single-ended signal line.

5 . The phase shifting system of claim 1 , wherein

the respective transmission line phase-shifting unit is configured as a differential transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of differential transmission lines, and the second group of transmission lines includes a second pair of differential transmission lines.

6 . The phase shifting system of claim 1 , wherein the phase shifting system further comprises a phase shifting controller, wherein

the phase shifting controller is coupled to each transmission line phase-shifting unit and configured to output a corresponding phase shifting control signal to each of at least one transmission line phase-shifting unit to control the at least one transmission line phase-shifting unit to perform phase shifting.

7 . The phase shifting system of claim 1 , wherein physical isolation is configured by a gap formed by physical disconnection, or a shielding structure.

8 . A radio frequency (RF) chip, comprising a phase shifting system, the phase shifting system comprising at least two cascaded transmission line phase-shifting units, wherein

a respective transmission line phase-shifting unit of the at least two cascaded transmission line phase-shifting units is configured to receive at least one phase shifting control signal and to shift a phase of a RF signal by a first phase or a second phase according to the at least one phase shifting control signal;

each transmission line phase-shifting unit comprises a plurality of groups of transmission lines including a first group of transmission lines and a second group of transmission lines;

a first subset of transmission lines in the first group of transmission lines of each transmission line phase-shifting unit are physically isolated from a second subset of transmission lines in the first group of transmission lines of an adjacent transmission line phase-shifting unit to prevent current transmission between the first subset of transmission lines and the second subset of transmission lines; and

transmission lines of the second group of transmission lines of each transmission line phase-shifting unit are coupled to respective transmission lines of the second group of transmission lines of an adjacent transmission line phase-shifting unit.

9 . The RF chip of claim 8 , wherein the phase shifting system further comprises:

a RF inverter disposed at a front stage or last stage of the at least two transmission line phase-shifting units cascaded.

10 . The RF chip of claim 9 , wherein the RF inverter includes a signal interface, wherein

the signal interface is connected with the second group of transmissions lines of the first of the at least two transmission line phase-shifting units and is physically isolated from at least part of transmission lines in the first group of transmission lines of the first of the at least two transmission line phase-shifting units.

11 . The RF chip of claim 8 , wherein

the respective transmission line phase-shifting unit is configured as a single-ended transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of ground wires and a single-ended signal line, and the second group of transmission lines includes a second pair of ground wires and the single-ended signal line.

12 . The RF chip of claim 8 , wherein

the respective transmission line phase-shifting unit is configured as a differential transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of differential transmission lines, and the second group of transmission lines includes a second pair of differential transmission lines.

13 . The RF chip of claim 8 , wherein the phase shifting system further comprises a phase shifting controller, wherein

the phase shifting controller is coupled to each transmission line phase-shifting unit and configured to output a corresponding phase shifting control signal to each of at least one transmission line phase-shifting unit to control the at least one transmission line phase-shifting unit to perform phase shifting.

14 . A radar sensor, comprising:

a transmitting antenna configured to radiate a RF transmitting signal in a form of a detection signal wave;

a receiving antenna configured to convert a detected echo signal wave into a RF receiving signal; wherein the echo signal wave is formed by reflection of the detection signal wave by an object; and

the RF chip of claim 8 , wherein the RF chip is coupled to the transmitting antenna and the receiving antenna, and is configured to output a RF transmitting signal subjected to phase shifting to the transmitting antenna and to convert the RF receiving signal into a baseband digital signal.

15 . The radar sensor of claim 14 , wherein the phase shifting system further comprises:

a RF inverter disposed at a front stage or last stage of the at least two transmission line phase-shifting units cascaded.

16 . The radar sensor of claim 15 , wherein the RF inverter includes a signal interface, wherein

the signal interface is connected with the second group of transmissions lines of the first of the at least two transmission line phase-shifting units and is physically isolated from at least part of transmission lines in the first group of transmission lines of the first of the at least two transmission line phase-shifting units.

17 . The radar sensor of claim 14 , wherein

the respective transmission line phase-shifting unit is configured as a single-ended transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of ground wires and a single-ended signal line, and the second group of transmission lines includes a second pair of ground wires and the single-ended signal line.

18 . The radar sensor of claim 14 , wherein

the respective transmission line phase-shifting unit is configured as a differential transmission line phase-shifting unit, and wherein the first group of transmission lines includes a first pair of differential transmission lines, and the second group of transmission lines includes a second pair of differential transmission lines.

19 . The radar sensor of claim 14 , wherein the phase shifting system further comprises a phase shifting controller, wherein

the phase shifting controller is coupled to each transmission line phase-shifting unit and configured to output a corresponding phase shifting control signal to each of at least one transmission line phase-shifting unit to control the at least one transmission line phase-shifting unit to perform phase shifting.

20 . An apparatus comprising:

the RF chip of claim 8 ; and

an apparatus body, wherein the RF chip is arranged on the apparatus body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2026
From: LIU, TAO; CHEN, JIASHU; LIU, ZHENGDONG; ZHOU, WENTING
To: CALTERAH SEMICONDUCTOR TECHNOLOGY (SHANGHAI) CO., LTD.
Reel/Frame 075925/0222 →
Continuity (2)
Continuation PCTCN2022123127 · Sep 30, 2022
Related Publication 20240118382A1 · Apr 11, 2024
References Cited (57)
US 7969359B2 · Krishnaswamy et al. · 2011 [cited by applicant]
US 10075159B1 · Birkbeck · 2018 [cited by applicant]
US 10291282B1 · Lin et al. · 2019 [cited by applicant]
US 10523167B2 · Shimura · 2019 [cited by applicant]
US 10862182B2 · Gölden et al. · 2020 [cited by applicant]
US 20080157900A1 · El Rai et al. · 2008 [cited by applicant]
US 20090315641A1 · Ding · 2009 [cited by examiner]
US 20170373363A1 · Zhou et al. · 2017 [cited by applicant]
US 20180131338A1 · Shimura · 2018 [cited by applicant]
US 20190158068A1 · Valdes Garcia et al. · 2019 [cited by applicant]
US 20190198957A1 · Sharma · 2019 [cited by applicant]
US 20200341112A1 · Itkin et al. · 2020 [cited by applicant]
US 20220196796A1 · Fiore · 2022 [cited by examiner]
US 20220231391A1 · Wang et al. · 2022 [cited by applicant]
US 20240222830A1 · Uemichi · 2024 [cited by examiner]
US 20240413512A1 · Uemichi · 2024 [cited by examiner]
CN 1525632A · 2004 [cited by applicant]
CN 1747307A · 2006 [cited by applicant]
CN 101194420A · 2008 [cited by applicant]
CN 102099957A · 2011 [cited by applicant]
CN 103066940A · 2013 [cited by applicant]
CN 104247278A · 2014 [cited by applicant]
CN 105207644 · 2015 [cited by applicant]
CN 105789803 · 2016 [cited by applicant]
CN 107546457A · 2018 [cited by applicant]
CN 109616723A · 2019 [cited by applicant]
CN 111830472A · 2020 [cited by applicant]
CN 112039493A · 2020 [cited by applicant]
CN 113013566 · 2021 [cited by applicant]
CN 113675550A · 2021 [cited by applicant]
CN 113889720A · 2022 [cited by applicant]
CN 114122648A · 2022 [cited by applicant]
JP 2004088591A · 2004 [cited by applicant]
JP 2017126981A · 2017 [cited by applicant]
JP 7072118B1 · 2022 [cited by applicant]
JP 7076658B1 · 2022 [cited by applicant]
JP 7076663 · 2022 [cited by applicant]
JP 7087215B1 · 2022 [cited by applicant]
JP 7111880B1 · 2022 [cited by applicant]
JP 7138260B1 · 2022 [cited by applicant]
TW 201131881A · 2011 [cited by applicant]
TW I663842B · 2019 [cited by applicant]
WO 2020157804A1 · 2020 [cited by applicant]
Calterah Semiconductor Technology (shanghai) Co.,Ltd., International Search Report with English translation, PCT/CN2022/123127, Apr. 28, 2023, 5 pgs. [cited by applicant]
Calterah Semiconductor Technology (shanghai) Co.,Ltd., International Search Report with English translation, PCT/CN2022/123131, Apr. 28, 2023, 5 pgs. [cited by applicant]
Calterah Semiconductor Technology (shanghai) Co.,Ltd., International Search Report with English translation, PCT/CN2022/123129, Apr. 28, 2023, 6 pgs. [cited by applicant]
Calterah Semiconductor Technology (shanghai) Co.,Ltd., International Search Report with English translation, PCT/CN2022/123130, Apr. 28, 2023, 5 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., JP First Office Action with English translation, JP 2023-581068, Dec. 13, 2024, 16 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., US Notice of Allowance, U.S. Appl. No. 18/149,616, Feb. 3, 2025, 13 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., Japanese Second Examination Report with English Translation, JP2023-581068, May 19, 2025, 12 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., US Non-Final Rejection, U.S. Appl. No. 18/184,636, Jul. 15, 2025, 8 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., US Non-Final Rejection, U.S. Appl. No. 18/193,520, Jun. 2, 2025, 8 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., Chinese First Examination Report with English Translation, CN202280004456.8, Jun. 30, 2025, 16 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., European Search Report, EP22871079.4, Oct. 9, 2025, 11 pgs. [cited by applicant]
Sadhu Bodhisatwa et al., “A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications”, IEEE Journal of Solid-State Circuits, vol. 52, No.… [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., European Search Report, EP22826588.0, Oct. 9, 2025, 14 pgs. [cited by applicant]
Calterah Semiconductor Technology (Shanghai) Co., Ltd., European Search Report, EP22865933.0, Oct. 9, 2025, 11 pgs. [cited by applicant]