High capacity compact lithium thin film battery
A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.
1. A structure comprising:
a cathode collector layer positioned along a substrate and lining a bottom and sidewalls of a trench within the substrate, wherein the substrate is a degenerately doped silicon that makes ohmic contact with the cathode collector layer and is configured to allow for a back side ohmic metal contact to be patterned;
one or more dicing channels etched into the substrate, wherein the one or more dicing channels are configured to define an edge of the structure and to reduce stresses associated with dicing of the structure;
a cathode layer isostatically pressed and buried within the cathode collector layer lining the trench in the substrate, combined with a liquid electrolyte additive, wherein a top surface of the cathode layer is substantially flush with a top surface of the cathode collector layer, the cathode layer has a given density and porosity based on a duration and a pressure associated with the isostatic pressing; and
an anode collector layer in direct contact with the substrate to form a seal around the trench and around the cathode collector layer, wherein the anode collector layer is not in direct contact with the cathode collector layer.
2. The structure of claim 1 further comprising:
an anode layer positioned on top of an electrolyte layer, wherein the electrolyte layer separates the cathode layer from the anode layer; and
an insulator layer positioned on top of the anode collector layer.
3. The structure of claim 2 , wherein the electrolyte layer provides ion conduction between the cathode layer and the anode layer.
4. The structure of claim 2 , wherein the anode collector layer serves as a current path for the anode layer.
5. A structure comprising:
a cathode collector layer positioned along a substrate and lining a bottom and sidewalls of a trench within the substrate, wherein the substrate is constructed of a degenerately doped silicon-based material that makes ohmic contact with the cathode collector layer and is configured to allow for a back side ohmic metal contact to be patterned;
one or more dicing channels etched into the substrate, wherein the one or more dicing channels are configured to define an edge of the structure and to reduce stresses associated with dicing of the structure;
an anode collector layer;
a cathode layer isostatically pressed and buried within the cathode collector layer lining the trench in the substrate, combined with a liquid electrolyte additive, wherein a top surface of the cathode layer is substantially flush with a top surface of the cathode collector layer, the cathode layer has a given density and porosity based on a duration and a pressure associated with the isostatic pressing, and the anode collector layer is in direct contact with the substrate to form a seal around the trench and around the cathode collector layer, wherein the anode collector layer is not in direct contact with the cathode collector layer;
an anode layer positioned on top of an electrolyte layer, wherein the electrolyte layer separates the cathode layer from the anode layer;
wherein the anode collector layer is positioned on top of the anode layer; and
a cap layer positioned on top of an insulator layer, wherein the insulator layer separates the anode collector layer from the cap layer, and wherein the cap layer is constructed of the silicon-based material.
6. The structure of claim 5 , wherein the electrolyte layer provides ion conduction between the cathode layer and the anode layer.
7. The structure of claim 5 , wherein the anode collector layer serves as a current path for the anode layer.
8. The structure of claim 5 , wherein the cap layer covers the cathode collector layer, the cathode layer, the electrolyte layer, the anode layer, the anode collector layer, and the insulator layer, and protects these layers from exposure to environmental elements, corrosion, and other damage.
9. The structure of claim 5 , wherein the electrolyte layer includes a solid-state electrolyte configured to provide in-situ processing with no air break.