Charge pump with pass transistor controlled by a supplementary charge pump stage
Disclosed is a charge pump circuit including: a single primary charge pump stage or multiple primary charge pump stages connected in series; a pass transistor connected between an output node of the primary charge pump stage (or of the last of the multiple primary charge pump stages, if applicable) and an output terminal; and a supplementary charge pump stage. The supplementary charge pump stage receives the same input voltage as the primary charge pump stage (or the same input voltage as the last of the multiple primary charge pump stages, if applicable) and controls the gate of the pass transistor to reduce ripple at the output terminal. A capacitive load can also be connected to the output terminal to reduce ripple and the size of the capacitive load can be selected to achieve a desired balance between the amount of ripple and circuit size.
1 . A structure comprising:
a primary charge pump stage including an input node and an output node;
supplementary charge pump stage including an additional input node and an additional output node, wherein the input node and the additional input node are connected to receive an input voltage;
an output terminal; and
a pass transistor connected between the output terminal and the output node and having a gate connected to the additional output node.
2 . The structure of claim 1 , wherein the primary charge pump stage includes:
cross-coupled inverters connected between the input node and the output node, wherein the cross-coupled inverters have intermediate nodes, respectively, with each intermediate node being at an interconnect between a P-channel field effect transistor (PFET) and an N-channel field effect transistor (NFET) of one of the cross-coupled inverters;
clock signal nodes connected to receive clock and inverted clock signals, respectively; and
capacitors connected between the clock signal nodes and the intermediate nodes.
3 . The structure of claim 2 , wherein the supplementary charge pump stage includes:
additional cross-coupled inverters connected between the additional input node and the additional output node, wherein the additional cross-coupled inverters have additional intermediate nodes, respectively, with each additional intermediate node being at an interconnect between an additional PFET and an additional NFET of one of the additional cross-coupled inverters;
additional clock signal nodes connected to receive the clock and inverted clock signals, respectively; and
additional capacitors connected between the additional clock signal nodes and the additional intermediate nodes.
4 . The structure of claim 3 , wherein the capacitors are larger than the additional capacitors.
5 . The structure of claim 3 , wherein the capacitors are at least 100 times larger than the additional capacitors.
6 . The structure of claim 1 , wherein the output terminal is connected to a capacitive load.
7 . The structure of claim 1 , wherein the output terminal is connected to a resistive load.
8 . A structure comprising:
a primary charge pump stage including an input node and an output node;
a supplementary charge pump stage including an additional input node and an additional output node, wherein the input node and the additional input node are connected to receive an input voltage;
an output terminal connected to a capacitive load; and
a pass transistor connected between the output terminal and the output node and having a gate connected to the additional output node.
9 . The structure of claim 8 , wherein the primary charge pump stage includes:
cross-coupled inverters connected between the input node and the output node, wherein the cross-coupled inverters have intermediate nodes, respectively, with each intermediate node being at an interconnect between a P-channel field effect transistor (PFET) and an N-channel field effect transistor (NFET) of one of the cross-coupled inverters;
clock signal nodes connected to receive clock and inverted clock signals, respectively; and
capacitors connected between the clock signal nodes and the intermediate nodes.
10 . The structure of claim 9 , wherein the supplementary charge pump stage includes:
additional cross-coupled inverters connected between the additional input node and the additional output node, wherein the additional cross-coupled inverters have additional intermediate nodes, respectively, with each additional intermediate node being at an interconnect between an additional PFET and an additional NFET of one of the additional cross-coupled inverters;
additional clock signal nodes connected to receive the clock and inverted clock signals, respectively; and
additional capacitors connected between the additional clock signal nodes and the additional intermediate nodes.
11 . The structure of claim 10 , wherein the capacitors are larger than the additional capacitors.
12 . The structure of claim 10 , wherein the capacitors are at least 100 times larger than the additional capacitors.
13 . The structure of claim 8 , wherein the output terminal is connected to a resistive load.
14 . A structure comprising:
multiple primary charge pump stages connected in series including at least a first primary charge pump stage and a last primary charge pump stage, wherein the last primary charge pump stage of the multiple primary charge pump stages includes a last input node and a last output node;
a supplementary charge pump stage including an additional input node and an additional output node, wherein the last input node and the additional input node are connected to receive a last input voltage from a preceding primary charge pump stage;
an output terminal; and
a pass transistor connected between the output terminal and the last output node and having a gate connected to the additional output node.
15 . The structure of claim 14 , wherein each primary charge pump stage includes:
cross-coupled inverters connected between input and output nodes, wherein the cross-coupled inverters have intermediate nodes, respectively, with each intermediate node being at an interconnect between a P-channel field effect transistor (PFET) and an N-channel field effect transistor (NFET) of one of the cross-coupled inverters;
clock signal nodes connected to receive clock and inverted clock signals, respectively; and
capacitors connected between the clock signal nodes and the intermediate nodes.
16 . The structure of claim 15 , wherein the supplementary charge pump stage includes:
additional cross-coupled inverters connected between the additional input node and the additional output node, wherein the additional cross-coupled inverters have additional intermediate nodes, respectively, with each additional intermediate node being at an interconnect between an additional PFET and an additional NFET of one of the additional cross-coupled inverters;
additional clock signal nodes connected to receive the clock and inverted clock signals, respectively; and
additional capacitors connected between the additional clock signal nodes and the additional intermediate nodes.
17 . The structure of claim 16 , wherein the capacitors of the last primary charge pump stage are larger than the additional capacitors of the supplementary charge pump stage.
18 . The structure of claim 16 , wherein the capacitors of the last primary charge pump stage are at least 100 times larger than the additional capacitors of the supplementary charge pump stage.
19 . The structure of claim 14 , wherein the output terminal is connected to a capacitive load.
20 . The structure of claim 14 , wherein the output terminal is connected to a resistive load.