Image sensor with multiple exposure times
An image sensor includes a pixel array, wherein the pixel array includes a first unit pixel including first sensing pixels adjacent along a column direction and second sensing pixels adjacent along the column direction, the first sensing pixels and the second sensing pixels being adjacent along a row direction, and a same color filter overlapping first and second sensing pixels. The first sensing pixels share a first floating diffusion node, and the second sensing pixels share a second floating diffusion node.
1 . An image sensor, comprising:
a first unit pixel arranged in a first continued multiple columns and three adjacent rows from a first row to a third row, wherein the first unit pixel includes a first group and a second group for sensing a green color,
a second unit pixel arranged in a second continued multiple columns and the first to third rows, wherein the second unit pixel includes a third group and a fourth group for sensing a red color;
a third unit pixel arranged in the second continued multiple columns and three adjacent rows from a fourth row to a sixth row, wherein the third unit pixel includes a fifth group and a sixth group for sensing the green color; and,
a fourth unit pixel arranged in the first continued multiple rows and the fourth to sixth columns, wherein the fourth unit pixel includes a seventh group and an eighth group for sensing a blue color, wherein:
the first group has three photodiodes being configured to have a first exposure time period and the second group has three photodiodes being configured to have an exposure time period shorter than the first exposure time period,
the third group has three photodiodes being configured to have the first exposure time period and the fourth group has four photodiodes being configured to have an exposure time period shorter than the first exposure time period,
the fifth group has three photodiodes being configured to have the first exposure time period and the sixth group has three photodiodes being configured to have an exposure time period shorter than the first exposure time period,
the seventh group has three photodiodes being configured to have the first exposure time period and the eighth group has four photodiodes being configured to have an exposure time period shorter than the first exposure time period,
the number of photodiodes in each of the first, second, third, fifth, sixth, and seventh groups of pixels is less than the number of photodiodes in each of the fourth and eighth groups of pixels,
the second unit pixel is disposed directly adjacent to the first unit pixel in a first direction,
the third unit pixel is disposed directly adjacent to the second unit pixel in a second direction perpendicular to the first direction,
the fourth unit pixel is disposed directly adjacent to the first unit pixel in the first direction,
the first to fourth unit pixels are arranged in a clockwise direction,
the three photodiodes in the first group are disposed with a first photodiode on the first row, a second photodiode on the second row, and a third photodiode on the third rows,
the three photodiodes in the fifth group are disposed with a fourth photodiode on the fourth row, a fifth photodiode on the fifth row, and a sixth photodiode on the sixth row, and
each of the first to fourth unit pixels has at least three microlens.
2 . The image sensor of claim 1 , wherein among a plurality of photodiodes included in each of the first unit pixel, the second unit pixel, the third unit pixel, and the fourth unit pixel, a plurality of photodiodes continuing in the second direction share one floating diffusion node.
3 . The image sensor of claim 1 , wherein a first photodiode in the second group disposed in the first row is disposed directly adjacent to a first photodiode in the fourth group disposed in the first row in the first direction, and
wherein a first photodiode in the first group disposed in the second row is disposed directly adjacent to a first photodiode in the third group disposed in the second row in the first direction.
4 . The image sensor of claim 1 , wherein a first photodiode in the eighth group is disposed directly adjacent to a first photodiode in the sixth group in the first direction, and
wherein a first photodiode in the seventh group is disposed directly adjacent to a first photodiode in the fifth group in the first direction.
5 . The image sensor of claim 2 , wherein a first photodiode in the second group disposed in the first row is disposed directly adjacent to a first photodiode in the fourth group disposed in the first row in the first direction, and
wherein a first photodiode in the first group disposed in the second row is disposed directly adjacent to one of photodiodes in the third group disposed in the second row in the first direction.
6 . The image sensor of claim 3 , wherein the four photodiodes in the eighth group of pixels are disposed on the fourth and the sixth rows.
7 . The image sensor of claim 5 , wherein the four photodiodes in the fourth group are disposed on the first and the third rows.
8 . The image sensor of claim 7 , wherein the four photodiodes in the eighth group are disposed on the fourth and the sixth rows.
9 . The image sensor of claim 8 , wherein the three photodiodes in the second group are disposed on the first and the third rows.
10 . The image sensor of claim 9 , wherein two of photodiodes in the second group disposed in the third row are disposed directly adjacent to each other in the first direction.