LOFIC anti-lag methods with reverse bias optimization, and associated systems, devices, and methods

1 . A method, comprising:

during a pixel lateral overflow integration capacitor (LOFIC) idle period for a pixel—

applying a reverse bias to a LOFIC of the pixel for a first time period, wherein applying the reverse bias to the LOFIC includes coupling a first metal electrode of the LOFIC to a power source and coupling a second metal electrode of the LOFIC to a bias voltage source, wherein a voltage level of a bias voltage provided by the bias voltage source is less than a voltage level of a power supply voltage supplied by the power source; and

applying a 0V bias to the LOFIC of the pixel for a second time period, wherein applying the 0V bias to the LOFIC includes shorting the first metal electrode and the second metal electrode of the LOFIC to the power source.

2 . The method of claim 1 , wherein the second time period occurs after the first time period within the pixel LOFIC idle period such that the 0V bias is applied to the LOFIC after the reverse bias is applied to the LOFIC.

3 . The method of claim 1 , wherein the second time period occurs before the first time period within the pixel LOFIC idle period such that the 0V bias is applied to the LOFIC before the reverse bias is applied to the LOFIC.

4 . The method of claim 3 , further comprising, during the pixel LOFIC idle period, applying the 0V bias to the LOFIC of the pixel for a third time period, wherein the third time period occurs after the first time period within the pixel LOFIC idle period such that the OV bias is applied to the LOFIC after the reverse bias is applied to the LOFIC.

5 . The method of claim 1 , wherein a duration of the first time period is longer than a duration of the second time period.

6 . The method of claim 1 , wherein a duration of the first time period is shorter than a duration of the second time period.

7 . The method of claim 1 , further comprising adjusting the bias voltage provided by the bias voltage source based at least in part on application of the pixel, silicon measurements corresponding to the pixel or an image sensor including the pixel, a desired discharge rate of charge trapped on the LOFIC, or any combination thereof.

8 . The method of claim 1 , further comprising adjusting a duration of the first time period based at least in part on application of the pixel, silicon measurements corresponding to the pixel or an image sensor including the pixel, a desired discharge accuracy, or any combination thereof.

9 . The method of claim 1 , further comprising adjusting a duration of the first time period based at least in part on a duration of a pixel integration period.

10 . The method of claim 1 , further comprising adjusting a duration of the second time period based at least in part on application of the pixel, silicon measurements corresponding to the pixel or an image sensor including the pixel, a desired discharge accuracy, en a duration of a pixel integration period, or any combination thereof.

11 . The method of claim 1 , wherein:

the pixel LOFIC idle period is a first pixel LOFIC idle period of a first frame;

the first frame includes a pixel integration period having a first duration;

a second frame includes (i) a second pixel LOFIC idle period and (ii) a pixel integration period having a second duration different from the first duration; and

the method further comprises:

during the second pixel LOFIC idle period of the second frame

applying the reverse bias to the LOFIC of the pixel for the first time period; and

applying the OV bias to the LOFIC for the second time period.

12 . The method of claim 1 , further comprising, after applying the reverse bias to the LOFIC, sampling and holding the bias voltage on the LOFIC for a third time period, wherein sampling and holding the bias voltage on the LOFIC includes uncoupling the LOFIC from the bias voltage source and forming a high impedance node at the second metal electrode of the LOFIC.

13 . The method of claim 12 , further comprising adjusting a duration of the third time period based at least in part on application of the pixel, silicon measurements corresponding to the pixel or an image sensor including the pixel, a desired discharge accuracy, or any combination thereof.

14 . The method of claim 1 , wherein:

the pixel LOFIC idle period is a pixel LOFIC idle period of a frame;

the bias voltage is a first bias voltage; and

the method further comprises coupling the second metal electrode of the LOFIC to a second bias voltage different from the first bias voltage during a pixel LOFIC integration period of the frame.

15 . An image sensor, comprising:

a pixel circuit, including—

a photodiode configured to photogenerate signal charge based on incident light,

a floating diffusion configured to receive the signal charge from the photodiode,

a lateral overflow integration capacitor (LOFIC) having (i) a first metal electrode selectively coupled to the floating diffusion and (ii) a second metal electrode,

a first reset transistor configured to selectively couple (a) the first metal electrode of the LOFIC and the floating diffusion to (b) a power source, based at least in part on a first reset control signal applied to a gate of the first reset transistor, and

a second reset transistor configured to selectively couple the second metal electrode of the LOFIC to the power source based at least in part on a second reset control signal applied to a gate of the second reset transistor; and

a switch configured to selectively couple the second metal electrode of the LOFIC to a bias voltage source, wherein a voltage level of a bias voltage provided by the bias voltage source is less than a voltage level of a power supply voltage supplied by the power source,

wherein the image sensor is configured, during a pixel LOFIC idle period of a frame, to:

apply a reverse bias to the LOFIC of the pixel for a first time period, and applying a 0V bias to the LOFIC of the pixel for a second time period.

16 . The image sensor of claim 15 , wherein:

to apply the reverse bias to the LOFIC, the image sensor is configured to (a) assert the first reset control signal to couple the first metal electrode of the LOFIC to the power source via the first reset transistor and (b) activate the switch to couple the second metal electrode of the LOFIC to the bias voltage source; and

to apply the 0V bias to the LOFIC, the image sensor is configured to (a) assert the first reset control signal to couple the first metal electrode of the LOFIC to the power source via the first reset transistor and (b) assert the second reset control signal to couple the second metal electrode of the LOFIC to the power source via the second reset transistor.

17 . The image sensor of claim 16 , wherein:

the second time period occurs after the first time period;

the image sensor is further configured, during the pixel LOFIC idle period of the frame, to apply a 0V bias to the LOFIC of the pixel for a third time period;

to apply the 0V bias to the LOFIC for the third time period, the image sensor is configured to (a) assert the first reset control signal to couple the first metal electrode of the LOFIC to the power source via the first reset transistor and (b) assert the second reset control signal to couple the second metal electrode of the LOFIC to the power source via the second reset transistor; and

the third time period occurs before the first time period within the pixel LOFIC idle period.

18 . The image sensor of claim 16 , wherein:

the image sensor is further configured, during the pixel LOFIC idle period of the frame, to sample and hold the bias voltage on the LOFIC for a third time period;

the third time period occurs after the first time period; and

to sample and hold the bias voltage on the LOFIC, the image sensor is configured to form a high impedance node at the second metal electrode of the LOFIC by deactivating the switch while (a) the second metal electrode of the LOFIC is coupled to the bias voltage source and (b) the second reset control signal is not asserted such that the second reset transistor is deactivated and the second metal electrode is uncoupled from the power source.

19 . The image sensor of claim 16 , wherein:

the bias voltage is a first bias voltage; and

the image sensor is further configured, during a pixel LOFIC integration period of the frame, to couple the second metal electrode of the LOFIC to a second bias voltage different from the first bias voltage and from the power supply voltage.

20 . The image sensor of claim 15 , wherein:

the pixel circuit is a first pixel circuit;

the image sensor further includes a second pixel circuit including—

a second photodiode configured to photogenerate second signal charge based on second incident light,

a second floating diffusion configured to receive the second signal charge from the second photodiode,

a second LOFIC having (i) a third metal electrode selectively coupled to the second floating diffusion and (ii) a fourth metal electrode,

a third reset transistor configured to selectively couple (a) the third metal electrode of the second LOFIC and the second floating diffusion to (b) the power source, based at least in part on the first reset control signal applied to a gate of the third reset transistor, and

a fourth reset transistor configured to selectively couple the fourth metal electrode of the LOFIC to the power source based at least in part on the second reset control signal applied to a gate of the fourth reset transistor; and

the switch is further configured to selectively couple the fourth metal electrode of the LOFIC to the bias voltage source.