Monolithic RGB micro LED display
A method of forming a light emitting diode array comprising a plurality of light emitting pixels, wherein at least one of the light emitting pixels comprises: a light emitting diode configured to emit light of a first primary peak wavelength; and organic semiconductors dispersed in a medium, wherein the organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the light emitting diode to provide output light of a second primary peak wavelength.
1 . A method of forming a high resolution monolithic micro light emitting diode array comprising a plurality of light emitting pixels with a pixel pitch less than 4 μm, the method comprising:
patterning an insulating layer on a light emitting diode array, thereby to define the perimeter of a light emitting surface of a first light emitting pixel associated with a first light emitting diode and the perimeter of a light emitting surface of a second light emitting pixel associated with a second light emitting diode;
depositing a conformal reflective layer on the patterned insulating layer and etching the conformal reflective layer thereby to expose the light emitting surfaces of the first light emitting pixel associated with the first light emitting diode and the second light emitting pixel associated with the second light emitting diode;
selectively covering the second light emitting diode with a material formed within the perimeter of the light emitting surface of the second light emitting pixel associated with the second light emitting diode;
subsequently depositing a medium in which organic semiconductors are dispersed within the perimeter of the light emitting surface of the first light emitting pixel associated with the first light emitting diode, wherein the first light emitting diode is configured to emit light of a first primary peak wavelength and wherein the organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the first light emitting diode to provide output light of a second primary peak wavelength;
planarizing the deposited medium in which organic semiconductors are dispersed; and
forming a passivation layer on the light emitting diode array, thereby to protect the medium.
2 . The method according to claim 1 , wherein at least one further light emitting pixel comprises:
a further light emitting diode configured to emit light of the first primary peak wavelength; and
further organic semiconductors dispersed in a further medium, wherein the further organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the further light emitting diode to output light of a third primary peak wavelength.
3 . The method according to claim 2 , wherein depositing the medium and/or further medium comprises slit coating or spin coating the medium and/or further medium.
4 . The method according to claim 3 , comprising selectively covering one or more light emitting diodes in the light emitting diode array with a material prior to depositing the medium and/or the further medium, thereby to enable selective deposition of the medium and/or further medium.
5 . The method according to claim 4 , wherein the material is at least one of:
a temporary material that is removable thereby to enable further deposition of the medium and/or the further medium on the selectively covered one or more light emitting diodes in a further distinct step after deposition of the medium and/or further medium on the light emitting diode array; and
an optically transparent material that enables light emission from the selectively covered one or more light emitting diodes, wherein the one or more light emitting diodes are configured to emit light with the primary peak wavelength.
6 . The method according to claim 1 , wherein the medium and/or further medium comprises at least one of: a resin, an epoxy and a polymer.
7 . The method according to claim 2 , wherein the organic semiconductors and/or the further organic semiconductors comprise conjugated organic semiconductors having a plurality of conjugated structures, wherein the organic semiconductors and/or further organic semiconductors are formed from organic semiconductor material, wherein the plurality of conjugated structures comprises a core and an arm, and wherein at least two of the plurality of conjugated structures have a different functional property.
8 . The method according to claim 7 , wherein one functional property is absorption at the first primary peak wavelength and wherein one functional property is emission of absorbed light at the second primary peak wavelength.
9 . The method according to 1 , comprising depositing a layer of insulating material on the light emitting diode array and selectively etching the insulating material to provide the patterned insulating layer.
10 . The method according to claim 1 , comprising curing the medium and/or the further medium.
11 . The method according to claim 1 , wherein the plurality of light emitting pixels each have a light emitting surface that is less than or equal to 100 μm 2 .
12 . A high resolution monolithic micro light emitting diode array with a pixel pitch less than 4 μm, the high resolution monolithic micro light emitting diode array comprising:
a patterned insulating layer on a light emitting diode array defining the perimeter of a light emitting surface of a first light emitting pixel associated with a first light emitting diode and the perimeter of a light emitting surface of a second light emitting pixel associated with a second light emitting diode;
a conformal reflective layer on the patterned insulating layer exposing the light emitting surfaces of the first light emitting pixel associated with the first light emitting diode and the second light emitting pixel associated with the second light emitting diode;
a flat and smooth medium in which organic semiconductors are dispersed within the perimeter of the light emitting surface of the first light emitting pixel associated with the first light emitting diode, wherein the first light emitting diode is configured to emit light of a first primary peak wavelength and wherein the organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the first light emitting diode to provide output light of a second primary peak wavelength; and
a passivation layer on the light emitting diode array, thereby to protect the medium.
13 . The light emitting diode array according to claim 12 , wherein at least one further light emitting pixel comprises:
a further light emitting diode configured to emit light of the first primary peak wavelength; and further organic semiconductors dispersed in a further medium, wherein the further organic semiconductors are configured to receive and convert input light of the first primary peak wavelength from the further light emitting diode to output light of a third primary peak wavelength.
14 . The light emitting diode array according to claim 12 , wherein one or more of the light emitting diodes comprises a material covering a light emitting surface of the one or more light emitting diodes, wherein the material is an optically transparent material that enables light emission from the covered one or more light emitting diodes, wherein the one or more light emitting diodes are configured to emit light with the primary peak wavelength.
15 . The light emitting diode array according to claim 12 , wherein the medium and/or further medium comprises at least one of: a resin, an epoxy and a polymer.
16 . The light emitting diode array according to claim 12 , wherein the organic semiconductors and/or the further organic semiconductors comprise conjugated organic semiconductors having a plurality of conjugated structures, wherein the organic semiconductors and/or further organic semiconductors are formed from organic semiconductor material, wherein the plurality of conjugated structures comprises a core and an arm, wherein at least two of the plurality of conjugated structures have a different functional property, wherein one functional property is absorption at the first primary peak wavelength and wherein one functional property is emission of absorbed light at the second primary peak wavelength.
17 . The light emitting diode array according to claim 12 , wherein the light emitting diode array is a high resolution monolithic micro LED array, comprising forming a reflective layer between at least two of the light emitting diodes in the high resolution monolithic micro LED array.
18 . The light emitting diode array according to claim 12 , wherein the plurality of light emitting pixels each have a light emitting surface that is less than or equal to 100 μm 2 .