Reflective mask blank and reflective mask
There are provided a reflective mask blank in which a fine absorption film pattern is formed even when a high-absorbent material is used as an absorption film of an EUV mask, whereby the shadowing effect can be reduced and electron beam repair etching can be performed and a reflective mask blank for producing the same. A reflective mask blank ( 10 ) according to this embodiment includes: a substrate ( 1 ); a multi-layer reflective film ( 2 ) reflecting an EUV light having a multi-layer structure formed on the substrate ( 1 ); a capping layer ( 3 ) protecting the multi-layer reflective film ( 2 ) formed on the multi-layer reflective film ( 2 ); and an absorption film ( 4 ) absorbing the EUV light formed on the capping layer ( 3 ), in which the absorption film ( 4 ) contains 50% by atom or more of elements constituting at least one of tin oxide (SnO) and indium oxide (InO) and contains a material easy to be etched by a fluorine-based gas or a chlorine-based gas.
1 . A reflective mask blank comprising:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer structure formed on the substrate;
a protective film configured to protect the reflective film formed on the reflective film; and
an absorption film configured to absorb the EUV light formed on the protective film, wherein
the absorption film contains 50% by atom or more of elements constituting tin oxide or indium oxide and contains at least one selected from the group consisting of antimony, iridium, osmium, rhenium, tungsten, germanium, vanadium, selenium, molybdenum, titanium, and aluminum, and oxides, nitrides, oxynitrides, and boron nitrides thereof, as a material able to be etched by a fluorine-based gas or a chlorine-based gas.
2 . The reflective mask blank according to claim 1 , wherein
a film thickness of the absorption film is 45 nm or less, and
an OD value (Optical Density) is 1.0 or more.
3 . The reflective mask blank according to claim 2 , wherein
an atomic number ratio (O/Sn) of oxygen (O) to tin (Sn) in the absorption film is within a range of 1.5 or more and 2.5 or less, and
an atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption film is within a range of 1.0 or more and 2.0 or less.
4 . The reflective mask blank according to claim 2 , wherein the absorption film contains a material having a higher repair etching rate in electron beam repair than a repair etching rate in electron beam repair of an absorption film containing only at least one of tin oxide and indium oxide.
5 . The reflective mask blank according to claim 1 , wherein
an atomic number ratio (O/Sn) of oxygen (O) to tin (Sn) in the absorption film is within a range of 1.5 or more and 2.5 or less, and
an atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption film is within a range of 1.0 or more and 2.0 or less.
6 . The reflective mask blank according to claim 1 , wherein the absorption film contains a material having a higher repair etching rate in electron beam repair than a repair etching rate in electron beam repair of an absorption film containing only at least one of tin oxide and indium oxide.
7 . A reflective mask comprising:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer structure formed on the substrate;
a protective film configured to protect the reflective film formed on the reflective film; and
an absorption film configured to absorb the EUV light formed on the protective film, wherein
the absorption film contains 50% by atom or more of elements constituting tin oxide or indium oxide and contains at least one selected from the group consisting of antimony, iridium, osmium, rhenium, tungsten, germanium, vanadium, selenium, molybdenum, titanium, and aluminum, and oxides, nitrides, oxynitrides, and boron nitrides thereof, as a material able to be etched by a fluorine-based gas or a chlorine-based gas.
8 . The reflective mask according to claim 7 , wherein
a film thickness of the absorption film is 45 nm or less, and
an OD value (Optical Density) is 1.0 or more.
9 . The reflective mask according to claim 7 , wherein
an atomic number ratio (O/Sn) of oxygen (O) to tin (Sn) in the absorption film is within a range of 1.5 or more and 2.5 or less, and
an atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption film is within a range of 1.0 or more and 2.0 or less.
10 . The reflective mask according to claim 7 , wherein the absorption film contains a material having a higher repair etching rate in electron beam repair than a repair etching rate in electron beam repair of an absorption film containing only at least one of tin oxide and indium oxide.