IP Library Granted Patent US 12,512,795
Granted Patent B2
US 12,512,795 · App. 18/783,580 · Granted Dec 30, 2025

Amplifier and image sensor device including the same

Inventors: Seungnam Choi (Hwaseong-si, KR); Yunjae Suh (Suwon-si, KR); Masamichi Ito (Hwaseong-si, KR); Junseok Kim (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H03F1/26H03F3/16H04N25/50H04N25/62H04N25/77H04N25/772H03F2200/372
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Quick Facts
Patent No.
US 12,512,795
App. No.
18/783,580
Granted
Dec 30, 2025
Kind
B2
Abstract

An amplifier includes a first capacitor connected between an input node and a floating node, a second capacitor connected between the floating node and an output node, an amplifying element connected between a power supply voltage and the output node and operating in response to a voltage level of the floating node, a current bias source connected between the output node and a ground voltage, a first reset switch connected between the floating node and an intermediate node and operating in response to a reset bias, a second reset switch connected between the intermediate node and the output node and operating in response to the reset bias, and a reset bias generator circuit that outputs the reset bias in response to a reset signal. The reset bias is one of a reset voltage of the intermediate node, the power supply voltage, and the ground voltage.

Claims (53)

1 . An image sensor comprising: a first substrate comprising: a first photo detector; a second photo detector; a floating diffusion node configured to connect to the first photo detector; a reset gate configured to connect to the floating diffusion node; and a source follower configured to connect to the floating diffusion node; and a second substrate comprising: a comparator configured to compare a first signal with a threshold value and to generate an on-event signal and an off-event signal, wherein the first signal is generated based on an amount of change of a light received by the second photo detector.

2 . The image sensor of claim 1 , wherein the first substrate and the second substrate are connected through a Cu-to-Cu bonding.

3 . The image sensor of claim 2 , wherein the second substrate further comprising:

an amplifier configured to receive a second signal generated based on a photo current corresponding to the light received by the second photo detector and to generate the first signal based on the second signal.

4 . The image sensor of claim 3 , wherein the amplifier further comprising:

a first node;

a second node;

a first capacitor configured to connect to the first node and the second node; and

a reset circuit configured to connect to the first node and the second node.

5 . The image sensor of claim 4 , wherein the comparator is configured to receive the first signal from the second node of the amplifier.

6 . The image sensor of claim 5 , wherein the amplifier further comprising:

a second capacitor configured to connect to the first node,

wherein the second capacitor, the first node, the first capacitor, and the second node are connected in series.

7 . The image sensor of claim 6 , further comprising:

a transistor configured to connect to the second capacitor.

8 . The image sensor of claim 2 , wherein the first photo detector is included in a first pixel,

wherein the second photo detector is included in a second pixel,

wherein the first pixel and the second pixel have the same length and the same width in a plan view.

9 . The image sensor of claim 8 , further comprising:

a third substrate comprising logic circuits and connected to the second substrate.

10 . The image sensor of claim 9 , wherein the transistor is a PMOS transistor.

11 . The image sensor of claim 10 , wherein the logic circuits are configured to control the first pixel.

12 . An image sensor comprising:

a first substrate comprising:

a first photo detector;

a second photo detector;

a floating diffusion node configured to connect to the first photo detector;

a reset gate configured to connect to the floating diffusion node; and

a source follower configured to connect to the floating diffusion node; and

a second substrate configured to receive a first signal generated based on an amount of change of a light received by the second photo detector and to generate an on-event signal and an off-event signal.

13 . The image sensor of claim 12 , wherein the second substrate further comprising:

an amplifier configured to receive the first signal and to generate a second signal;

a comparator configured to compare the second signal with a threshold value and to generate the on-event signal and the off-event signal.

14 . The image sensor of claim 13 , wherein the amplifier is configured to remove a noise generated from a leakage.

15 . The image sensor of claim 14 , wherein the amplifier comprises:

a first node;

a second node;

a reset bias generator configured to generate a reset bias; and

a reset circuit configured to connect to the first and second nodes and to receive the reset bias.

16 . The image sensor of claim 13 , wherein the amplifier comprises:

a first node;

a second node;

a first capacitor; and

a second capacitor,

wherein the first capacitor, the first node, the second capacitor, and the second node are connected in series.

17 . The image sensor of claim 16 , wherein the comparator is configured to receive the second signal from the second node of the amplifier.

18 . The image sensor of claim 17 , further comprising:

a current bias configured to connect to the first capacitor; and

a PMOS transistor configured to connect to the first capacitor and the current bias.

19 . An image sensor comprising: a first substrate comprising: a first photo detector; a second photo detector; a floating diffusion node configured to connect to the first photo detector; a reset gate configured to connect to the floating diffusion node; and a source follower configured to connect to the floating diffusion node; and a second substrate comprising: an amplifier configured to receive a first signal generated based on a photo current and to generate a second signal; and a comparator configured to compare the second signal with a threshold value, wherein the photo current is generated based on an amount of change of a light incident received by the second photo detector, wherein the amplifier is configured to remove a noise generated from a leakage, and wherein the first substrate and the second substrate are connected through a Cu-to-Cu bonding.

20 . The image sensor of claim 19 , wherein a first photo detector is included in a first pixel,

wherein a second photo detector is included in a second pixel, and

wherein the first pixel and the second pixel have the same length and the same width in a plan view.

Priority Claims (1)
KR 10-2019-0108772 · Sep 3, 2019 · national
Continuity (4)
Continuation 18190515 · Mar 27, 2023
Continuation 17467519 · Sep 7, 2021
Continuation 16886899 · May 29, 2020
Related Publication 20240380364A1 · Nov 14, 2024
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