Semiconductor device
A semiconductor device includes a substrate, a lower electrode on the substrate and extending in a vertical direction, a supporter surrounding at least a portion of sidewalls of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the supporter, an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper electrode and the lower electrode, and a liner film between the lower electrode and the supporter, the liner film surrounding an upper portion of the lower electrode, where the lower electrode includes a first metal nitride including a first metal, the liner film includes a second metal nitride including a second metal, a first ratio of the first metal in the first metal nitride is higher than a second ratio of the second metal in the second metal nitride, and a third ratio of nitrogen atoms in the first metal nitride is lower than a fourth ratio of nitrogen atoms in the second metal nitride.
1 . A semiconductor device comprising:
a substrate;
a lower electrode on the substrate and extending in a vertical direction;
a supporter surrounding at least a portion of sidewalls of the lower electrode and supporting the lower electrode;
a dielectric layer on the lower electrode and the supporter;
an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper electrode and the lower electrode; and
a liner film between the lower electrode and the supporter, the liner film surrounding an upper portion of the lower electrode,
wherein the lower electrode comprises a first metal nitride comprising a first metal,
wherein the liner film comprises a second metal nitride comprising a second metal,
wherein a first ratio of the first metal in the first metal nitride is higher than a second ratio of the second metal in the second metal nitride, and
wherein a third ratio of nitrogen atoms in the first metal nitride is lower than a fourth ratio of nitrogen atoms in the second metal nitride.
2 . The semiconductor device of claim 1 , wherein a horizontal width of the upper portion of the lower electrode surrounded by the liner film is greater than a horizontal width of a lower portion of the lower electrode, the lower portion of the lower electrode not being surrounded by the liner film.
3 . The semiconductor device of claim 1 , wherein the third ratio of nitrogen atoms in the first metal nitride is about 30 at % or higher and is less than about 50 at %, and
wherein the fourth ratio of nitrogen atoms in the second metal nitride is about 50 at % or higher and is about 70 at % or less.
4 . The semiconductor device of claim 1 , wherein at least some portion of side surfaces of the liner film have a slope different from that of at least side surfaces of the lower electrode.
5 . The semiconductor device of claim 1 , wherein a first point corresponding to a largest horizontal width of the liner film is located farther from the substrate than a second point corresponding to a smallest horizontal width of the liner film.
6 . The semiconductor device of claim 1 , wherein the lower electrode includes a portion of which a horizontal width increases as a distance from the substrate in the vertical direction increases, and
a slope of side surfaces of a lower portion of the lower electrode is different from a slope of side surfaces of the upper portion of the lower electrode.
7 . The semiconductor device of claim 1 , wherein a fifth ratio of a horizontal width of the liner film to a vertical depth of the liner film is greater than 0 and is about 1/80 or less.
8 . The semiconductor device of claim 1 , wherein a largest horizontal width of the liner film is from about 0.5 nm to about 1.5 nm.
9 . The semiconductor device of claim 1 , wherein the liner film comprises:
a first portion surrounded by the supporter and contacting the supporter, and
a second portion between the lower electrode and the dielectric layer, and contacting the dielectric layer, and
wherein a horizontal width of the first portion of the liner film is greater than a horizontal width of the second portion of the liner film.
10 . The semiconductor device of claim 9 , wherein a largest horizontal width of the second portion of the liner film is greater than 0 nm and is less than or equal to about 0.75 nm.
11 . The semiconductor device of claim 1 , wherein a top surface of the liner film is on a same plane as a top surface of the lower electrode.
12 . A semiconductor device comprising:
a substrate;
a structure on the substrate;
a liner film over a lower electrode trench and penetrating the structure; and
a lower electrode provided in the lower electrode trench and covering at least a portion of the liner film,
wherein the structure comprises:
a supporter surrounding at least a portion of sidewalls of the liner film and at least a portion of sidewalls of the lower electrode, and supporting the lower electrode;
a dielectric layer on the lower electrode and the supporter; and
an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper electrode and the lower electrode,
wherein the lower electrode comprises a first metal nitride comprising a first metal,
wherein the liner film comprises a second metal nitride comprising a second metal,
wherein a first ratio of the first metal in the first metal nitride is higher than a second ratio of the second metal in the second metal nitride, and
wherein a third ratio of nitrogen atoms in the first metal nitride is lower than a fourth ratio of nitrogen atoms in the second metal nitride.
13 . The semiconductor device of claim 12 , wherein a horizontal width of an upper portion of the lower electrode in which the liner film is provided is greater than a horizontal width of a lower portion of the lower electrode in which the liner film is not provided.
14 . The semiconductor device of claim 12 , wherein the lower electrode includes a portion of which a horizontal width increases as a distance from the substrate in a vertical direction increases, and
a slope of side surfaces of a lower portion of the lower electrode is different from a slope of side surfaces of an upper portion of the lower electrode.
15 . The semiconductor device of claim 12 , wherein a first point corresponding to a largest horizontal width of the liner film is located farther from the substrate than a second point corresponding to a smallest horizontal width of the liner film.
16 . The semiconductor device of claim 12 , wherein at least some portion of side surfaces of the liner film have a slope different from that of side surfaces of the lower electrode.
17 . The semiconductor device of claim 12 , wherein the third ratio of nitrogen atoms in the first metal nitride is about 30 at % or higher and is less than about 50 at %, and
wherein the fourth ratio of nitrogen atoms in the second metal nitride is about 50 at % or higher and is about 70 at % or less.
18 . The semiconductor device of claim 12 , wherein a fifth ratio of a horizontal width of the liner film to a vertical depth of the liner film is greater than 0 and is about 1/80 or less.
19 . The semiconductor device of claim 12 , wherein a largest horizontal width of the liner film is from about 0.5 nm to about 1.5 nm.
20 . A semiconductor device comprising:
a substrate;
an active region defined by a device isolation layer in the substrate;
a word line in the substrate and extending across the active region in a first horizontal direction;
a bit line extending over the word line in a second horizontal direction perpendicular to the first horizontal direction; and
a capacitor at a level than a level of the bit line,
wherein the capacitor comprises:
a lower electrode on the substrate and extending in a vertical direction;
a supporter surrounding at least a portion of sidewalls of the lower electrode and supporting the lower electrode;
a dielectric layer on the lower electrode and the supporter;
an upper electrode on the lower electrode and at least a portion of the dielectric layer, wherein the dielectric layer is between the upper electrode and the lower electrode; and
a liner film surrounding an upper portion of the lower electrode,
wherein a horizontal width of the upper portion of the lower electrode surrounded by the liner film is greater than a horizontal width of a lower portion of the lower electrode, the lower portion of the lower electrode not being surrounded by the liner film,
wherein the lower electrode comprises a first metal nitride comprising a first metal,
wherein the liner film comprises a second metal nitride comprising a second metal,
wherein the first metal and the second metal comprise a same type of metal element,
wherein a first ratio of the first metal in the first metal nitride is higher than a second ratio of the second metal in the second metal nitride,
wherein a third ratio of nitrogen atoms in the first metal nitride is about 30 at % or higher and is less than about 50 at %, and
wherein a fourth ratio of nitrogen atoms in the second metal nitride is about 50 at % or higher and is about 70 at % or less.