IP Library › Granted Patent US 12,514,018
Granted Patent B2
US 12,514,018 · App. 18/004,484 · Granted Dec 30, 2025

Imaging device

Inventors: Yoshihisa Kagawa (Kanagawa, JP); Hiroshi Horikoshi (Kanagawa, JP); Masaki Haneda (Kanagawa, JP); Hiroshi Nakazawa (Kanagawa, JP); Takatoshi Kameshima (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H10F39/811H10F39/809
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Quick Facts
Patent No.
US 12,514,018
App. No.
18/004,484
Granted
Dec 30, 2025
Kind
B2
Abstract

An imaging device according to an embodiment of the present disclosure includes: a first wiring layer; a first insulating film; and a second insulating film. The first wiring layer includes a plurality of first wiring lines that extends in one direction. The plurality of first wiring lines each has a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction. The first insulating film covers a surface of the first wiring layer. The second insulating film is stacked on the first insulating film. The second insulating film forms a gap between the plurality of adjacent first wiring lines.

Claims (62)

1 . An imaging device, comprising:

a first wiring layer including a plurality of first wiring lines that extends in one direction, the plurality of first wiring lines each having a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction;

a first insulating film that covers a surface of the first wiring layer; and

a second insulating film that is stacked on the first insulating film,

wherein the first insulating film forms a plurality of gaps between adjacent first wiring lines included in the plurality of first wiring lines,

wherein at least some of the first wiring lines included in the plurality of first wiring lines have wiring intervals that are different from each other,

wherein grooves included in a plurality of grooves in which the plurality of gaps is formed have depths different from each other in accordance with the different wiring intervals, and

wherein each gap included in the plurality of gaps is between a different pair of first wiring lines.

2 . The imaging device according to claim 1 , wherein the ends of the plurality of first wiring lines have angles of more than 0° with respect to tangent lines on upper surfaces of the plurality of respective first wiring lines.

3 . An imaging device, comprising:

a first wiring layer including a plurality of first wiring lines that extends in one direction, the plurality of first wiring lines each having a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction;

a first insulating film that covers a surface of the first wiring layer; and

a second insulating film that is stacked on the first insulating film,

wherein the first insulating film forms a plurality of gaps between adjacent first wiring lines included in the plurality of first wiring lines,

wherein at least some of the first wiring lines included in the plurality of first wiring lines have wiring intervals that are different from each other,

wherein the second insulating film covers side surfaces and bottom surfaces of a plurality of grooves in which a plurality of the gaps is formed and has thicknesses different from each other in accordance with the wiring intervals different from each other, the plurality of the gaps being each provided between the plurality of first wiring lines,

wherein the plurality of first wiring lines has a first interval and a second interval as the wiring intervals different from each other, the second interval being wider than the first interval, and

wherein a thickness of the first insulating film that covers the side surfaces and the bottom surface of a first groove in which each of first gaps is formed is less than a thickness of the second insulating film that covers the side surfaces and the bottom surface of a second groove in which each of second gaps is formed, the first gaps being provided at the first interval, the second gaps being provided at the second interval.

4 . The imaging device according to claim 1 , wherein

the plurality of first wiring lines has a first interval and a second interval as the wiring intervals different from each other, the second interval being wider than the first interval, and

a first groove in which each of first gaps is formed is deeper than a second groove in which each of second gaps is formed, the first gaps being provided at the first interval, the second gaps being provided at the second interval.

5 . The imaging device according to claim 1 , wherein the first wiring lines included in the plurality of first wiring lines have wiring intervals that are different from each other, and

wherein the first insulating film covers side surfaces and bottom surfaces of a plurality of grooves in which a plurality of the gaps is formed and has thicknesses different from each other in accordance with the wiring intervals different from each other, the plurality of the gaps being each provided between the plurality of first wiring lines.

6 . The imaging device according to claim 1 , wherein the plurality of first wiring lines is formed at pitches that are substantially same as each other.

7 . The imaging device according to claim 1 , wherein tops of the gaps are formed at a substantially same height as a surface height of the plurality of first wiring lines.

8 . The imaging device according to claim 1 , wherein bottoms of the gaps are formed at a substantially same depth as a bottom surface depth of the plurality of first wiring lines.

9 . The imaging device according to claim 1 , wherein tops of the gaps are formed at positions higher than a surface height of the plurality of first wiring lines each having the gaps formed on both sides.

10 . The imaging device according to claim 1 , wherein bottoms of the gaps are formed at positions deeper than a bottom surface depth of the plurality of first wiring lines.

11 . The imaging device according to claim 1 , wherein a plurality of the gaps each formed between the plurality of first wiring lines has widened sections that expand below bottoms of the plurality of first wiring lines from regions between the plurality of first wiring lines.

12 . The imaging device according to claim 1 , further comprising a second wiring layer that is formed below the first wiring layer with a third insulating film interposed in between, the second wiring layer including a plurality of second wiring lines extending in the one direction, wherein

a plurality of the gaps each formed between the plurality of first wiring lines is formed to continuously extend to regions between the plurality of respective second wiring lines in the second wiring layer through the third insulating film.

13 . The imaging device according to claim 1 , wherein the second insulating film has irregularities above the plurality of first wiring lines.

14 . The imaging device according to claim 1 , wherein the second insulating film is formed by using a low dielectric constant material having a relative dielectric constant k of 3.0 or less.

15 . The imaging device according to claim 1 , further comprising a fourth insulating film that is stacked on the second insulating film and has a planar surface.

16 . The imaging device according to claim 15 , wherein the fourth insulating film is formed by using a material having a higher polishing rate than a polishing rate of the first insulating film.

17 . The imaging device according to claim 15 , wherein the fourth insulating film is formed by using silicon oxide (SiO x ), SiOC, SiOF, or SiON.

18 . The imaging device according to claim 3 , wherein the first wiring lines included in the plurality of first wiring lines have wiring intervals that are different from each other, and

wherein grooves included in a plurality of grooves in which the plurality of the gaps is formed have depths different from each other in accordance with the different wiring intervals, wherein the gaps are each provided between the first wiring lines.

19 . An imaging device, comprising:

a first wiring layer including a plurality of first wiring lines that extends in one direction, the plurality of first wiring lines each having a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction;

a first insulating film that covers a surface of the first wiring layer; and

a second insulating film that is stacked on the first insulating film,

wherein the first insulating film forms a plurality of gaps between adjacent first wiring lines included in the plurality of first wiring lines, and wherein the gaps included in the plurality of gaps are continuous to each other at bottoms of the plurality of first wiring lines.

20 . An imaging device, comprising:

a first wiring layer including a plurality of first wiring lines that extends in one direction, the plurality of first wiring lines each having a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction;

a first insulating film that covers a surface of the first wiring layer;

a second insulating film that is stacked on the first insulating film;

a fourth insulating film that is stacked on the second insulating film and has a planar surface,

wherein the first insulating film forms a plurality of gaps between adjacent first wiring lines included in the plurality of first wiring lines;

a first electrically conducive film that is right opposed to at least a portion of the first wiring lines with the first insulating film, the second insulating film, and the fourth insulating film interposed in between; and

a fifth insulating film that is stacked on the fourth insulating film,

wherein the first electrically conducive film is buried in the fifth insulating film and a surface of the first electrically conducive film forms a plane flush with a surface of the fifth insulating film.

21 . The imaging device according to claim 20 , further comprising:

a first substrate including a sensor pixel on a first semiconductor substrate, the sensor pixel performing photoelectric conversion;

a second substrate including a readout circuit on a second semiconductor substrate, the readout circuit outputting a pixel signal based on electric charge outputted from the sensor pixel; and

a third substrate including at least one of a logic circuit or a memory circuit on a third semiconductor substrate, the logic circuit processing the pixel signal, the memory circuit holding the pixel signal, wherein

the first substrate, the second substrate, and the third substrate are stacked in this order.

22 . The imaging device according to claim 21 , wherein

the second substrate further includes a multilayer wiring layer on a side facing the third substrate, the multilayer wiring layer including the fifth insulating film in which the first electrically conducive film is formed to be buried,

the third substrate further includes a multilayer wiring layer on a side facing the second substrate, the multilayer wiring layer including a second electrically conducive film that forms a plane flush with a surface facing the second substrate, and

the second substrate and the third substrate are further electrically coupled to each other by joining the first electrically conducive film and the second electrically conducive film.

23 . The imaging device according to claim 22 , wherein the second substrate and the third substrate are electrically coupled to each other by Cu—Cu junction.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2023
From: KAGAWA, YOSHIHISA; HORIKOSHI, HIROSHI; HANEDA, MASAKI; NAKAZAWA, HIROSHI; KAMESHIMA, TAKATOSHI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 062343/0251 →
Continuity (1)
Related Publication 20230282666A1 · Sep 7, 2023
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