IP Library › Granted Patent US 12,515,282
Granted Patent B2
US 12,515,282 · App. 19/099,227 · Granted Jan 6, 2026

Flux and method for producing electronic component

Inventors: Tomohisa Kawanago (Tokyo, JP); Yasuhiro Kajikawa (Tokyo, JP); Kuniaki Sato (Tokyo, JP); Ayaka Shirakawa (Tokyo, JP)
Assignee: SENJU METAL INDUSTRY CO., LTD.
B23K35/362B23K35/3613B23K35/3618H01L21/4853H01L21/4871H01L24/29H01L24/83H01L24/32H01L2224/29109H01L2224/29139H01L2224/32245H01L2224/83191H01L2224/83815H01L2924/16235
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,515,282
App. No.
19/099,227
Granted
Jan 6, 2026
Kind
B2
Abstract

Provided is a flux that can suppress the generation of voids when an indium alloy sheet is used to perform a continuous reflow under different temperature conditions. The present invention employs a flux that contains a rosin ester, an organic acid (A), and a solvent (S). The organic acid (A) includes a dimer acid (A1) that demonstrates a weight reduction rate of not more than 1 mass % in a thermogravimetric analysis in which the dimer acid is heated up to 260° C. at a temperature rising rate of 10° C./min. The solvent (S) includes a solvent (S1) that demonstrates the weight reduction rate of at least 99 mass % in a thermogravimetric analysis in which the solvent (S1) is heated up to 150° C. at a temperature rising rate of 6° C./min.

Claims (32)

1 . A flux comprising:

a rosin ester;

an organic acid (A); and

a solvent(S),

wherein the organic acid (A) comprises a dimer acid (A1) having a weight reduction rate of 1% by mass or less when heated to 260° C. at a temperature rising rate of 10° C./min in thermogravimetric measurement, and

the solvent(S) comprises a solvent (S1) having a weight reduction rate of 99% by mass or greater when heated to 150° C. at a temperature rising rate of 6° C./min in the thermogravimetric measurement,

a content of the dimer acid (A1) is 5% by mass or greater and 70% by mass or less with respect to a total mass, 100% by mass, of the flux,

a content of the dimer acid (A1) is 75% by mass or greater with respect to a total mass of the organic acid (A),

a content of the solvent (S1) is 10% by mass or greater and 90% by mass or less with respect to the total mass, 100% by mass, of the flux, and

a content of the solvent (S1) is 70% by mass or greater with respect to a total mass of the solvent(S).

2 . The flux according to claim 1 ,

wherein the content of the solvent (S1) is 80% by mass or greater with respect to the total mass of the solvent(S).

3 . The flux according to claim 1 ,

wherein the dimer acid (A1) is at least one selected from the group consisting of dimers to which unsaturated fatty acids having 18 carbon atoms are bonded.

4 . The flux according to claim 1 ,

wherein the solvent (S1) has a boiling point of 200° C. or lower.

5 . The flux according to claim 1 , further comprising an azole.

6 . The flux according to claim 1 ,

wherein the content of the solvent (S1) is 10% by mass or greater and 75% by mass or less with respect to the total mass, 100% by mass, of the flux, and

the content of the dimer acid (A1) is 10% by mass or greater and 60% by mass or less with respect to the total mass of the flux.

7 . The flux according to claim 1 ,

wherein the content of the solvent (S1) is 10% by mass or greater and 75% by mass or less with respect to the total mass, 100% by mass, of the flux, and

a content of the rosin ester is 15% by mass or greater and 60% by mass or less with respect to a total mass of the flux.

8 . A method for producing an electronic component comprising a semiconductor package, the method comprising:

a step (i) of obtaining a semiconductor package including a bonded object in which a die and a lid are bonded to each other through a thermal interface material (TIM); and

a step (ii) of bonding a solder ball to a rear surface of the semiconductor package to obtain an electronic component,

wherein the TIM is a sheet made of an alloy consisting of indium and silver,

the step (i) comprises a heating operation (1) of bonding the die and the lid to each other by a reflow method with a flux of claim 1 being interposed on at least one side of between the TIM and the die and between the TIM and the lid, and

the step (ii) comprises a heating operation (2) of bonding the solder ball and the semiconductor package to each other by the reflow method.

9 . The method for producing an electronic component according to claim 8 ,

wherein the heating operation (1) is carried out under a temperature condition of 150° C. to 250° C., and

the heating operation (2) is carried out under a temperature condition of 200° C. to 280° C.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2025
From: KAWANAGO, TOMOHISA; KAJIKAWA, YASUHIRO; SATO, KUNIAKI; SHIRAKAWA, AYAKA
To: SENJU METAL INDUSTRY CO., LTD.
Reel/Frame 070032/0941 →
Priority Claims (1)
JP 2022-135236 · Aug 26, 2022 · national
Continuity (1)
Related Publication 20250256363A1 · Aug 14, 2025
References Cited (32)
US 12220771B2 · Yamagame · 2025 [cited by examiner]
US 20120305632A1 · Ross et al. · 2012 [cited by applicant]
US 20200391329A1 · Onitsuka et al. · 2020 [cited by applicant]
US 20210060714A1 · Kawasaki et al. · 2021 [cited by applicant]
US 20220193834A1 · Ikeda · 2022 [cited by applicant]
CN 101695794A · 2010 [cited by applicant]
CN 102049631A · 2011 [cited by applicant]
CN 105855749A · 2016 [cited by applicant]
CN 108296673A · 2018 [cited by applicant]
CN 109641324A · 2019 [cited by applicant]
CN 111526967A · 2020 [cited by applicant]
CN 111989188A · 2020 [cited by applicant]
JP 2010539706A · 2010 [cited by applicant]
JP 2012223622A · 2012 [cited by applicant]
JP 2015085353A · 2015 [cited by applicant]
JP 6501003B · 2019 [cited by applicant]
JP 6540788B · 2019 [cited by applicant]
JP 6540789A · 2019 [cited by applicant]
JP 2019130566A · 2019 [cited by applicant]
JP 6638841B · 2020 [cited by applicant]
JP 6646242B · 2020 [cited by applicant]
JP 2020040105A · 2020 [cited by applicant]
JP 2020163455A · 2020 [cited by applicant]
JP 7427657B2 · 2024 [cited by applicant]
TW 202106890A · 2021 [cited by applicant]
WO 2009035907A2 · 2009 [cited by applicant]
International Search Report for Application No. PCT/JP2023/030134, mailed Nov. 14, 2023 (4 pages). [cited by applicant]
Japanese Notice of Reasons for Rejection for Application No. 2022-135236, mailed Oct. 25, 2022 (6 pages). [cited by applicant]
Taiwan Search Report for Application No. 112131720, mailed May 28, 2024 (13 pages). [cited by applicant]
Office Action in Chinese Patent Application No. 2023800607914 with English Translation, dated Jul. 26, 2025, (7 pages). [cited by applicant]
Notice of Allowance in Korean Patent Application No. 10-2025-7005604 with English Translation, mailed May 28, 2025, (5 pages). [cited by applicant]
Office Action in European Patent Application 23857340.6, dated Sep. 25, 2025, (5 pages). [cited by applicant]