Signal distribution for a quantum computing system
A method of fabricating a carrier chip for distributing signals among circuit elements of a quantum computing device, includes: providing a multilayer wiring stack, the multilayer wiring stack comprising alternating layers of dielectric material and wiring; bonding a capping layer to the multilayer wiring stack, in which the capping layer includes a single crystal silicon dielectric layer; forming a via hole within the capping layer, in which the via hole extends to a first wiring layer of the multilayer wiring stack; forming an electrically conductive via within the via hole and electrically coupled to the first wiring layer; and forming a circuit element on a surface of the capping layer, in which the circuit element is directly electrically coupled to the electrically conductive via.
1 . A quantum computing device comprising:
a multilayer wiring stack comprising a plurality of dielectric layers;
a capping layer bonded to the multilayer wiring stack, wherein a loss tangent of the capping layer is lower than a loss tangent of the plurality of dielectric layers, wherein the loss tangent of the capping layer is between about 1×10 −6 to about 10×10 −6 at one or more microwave frequencies and at a temperature of less than about 100 mK;
a first circuit element on a first surface of the capping layer that faces away from the multilayer wiring stack, wherein the first circuit element is electrically connected to a signal layer of the multilayer wiring stack.
2 . The quantum computing device of claim 1 , wherein the first circuit element is configured to exhibit a quality factor, Q, that is greater than about 6×10 5 at the one or more microwave frequencies.
3 . The quantum computing device of claim 2 , wherein the first circuit element is configured to exhibit a quality factor, Q, that is less than about 2×10 6 at the one or more microwave frequencies.
4 . The quantum computing device of claim 1 , wherein the capping layer comprises a thickness between about 2 microns and about 20 microns.
5 . The quantum computing device of claim 1 , wherein the capping layer comprises a single crystalline silicon layer.
6 . The quantum computing device of claim 5 , wherein the single crystalline silicon layer comprises a silicon wafer.
7 . The quantum computing device of claim 1 , wherein the capping layer is joined to the multilayer wiring stack through a bonding layer.
8 . The quantum computing device of claim 7 , wherein the bonding layer comprises an electrically conductive material.
9 . The quantum computing of claim 8 , wherein the electrically conductive material comprises a superconductor.
10 . The quantum computing device of claim 1 , wherein the first circuit element comprises a qubit control element, a qubit bias element, or a qubit readout element.
11 . The quantum computing device of claim 1 , comprising a chip coupled to the capping layer.
12 . The quantum computing device of claim 11 , wherein the chip is bump bonded to the capping layer.
13 . The quantum computing device of claim 11 , wherein the chip comprises at least one qubit.
14 . A method of fabricating a quantum computing device, the method comprising:
providing a multilayer wiring stack, the multilayer wiring stack comprising a plurality of dielectric layers;
bonding a capping layer to the multilayer wiring stack, wherein a loss tangent of the capping layer is lower than a loss tangent of the plurality of dielectric layers, wherein the loss tangent of the capping layer is between about 1×10 −6 to about 10×10 −6 at one or more microwave frequencies and at a temperature of less than about 100 mK; and
forming a first circuit element on a first surface of the capping layer that faces away from the multilayer wiring stack, wherein forming the first circuit element comprises electrically connecting the first circuit element to a signal layer of the multilayer wiring stack.
15 . The method of claim 14 , wherein the first circuit element is configured to exhibit a quality factor, Q, that is greater than about 6×10 5 and less than about 2×10 6 at the one or more microwave frequencies.
16 . The method of claim 14 , wherein bonding the capping layer to the multilayer wiring stack comprises:
forming a bonding layer on the multilayer wiring stack; and
bonding the capping layer to the bonding layer.
17 . The method of claim 14 , comprising forming an electrically conductive pathway from the multilayer wiring stack to the first surface of the capping layer.
18 . The method of claim 14 , comprising coupling a chip to the capping layer, wherein the chip comprises at least one qubit.
19 . The method of claim 18 , wherein coupling the chip to the capping layer comprises bump bonding the chip to the capping layer.